JPS6237633Y2 - - Google Patents

Info

Publication number
JPS6237633Y2
JPS6237633Y2 JP1982094568U JP9456882U JPS6237633Y2 JP S6237633 Y2 JPS6237633 Y2 JP S6237633Y2 JP 1982094568 U JP1982094568 U JP 1982094568U JP 9456882 U JP9456882 U JP 9456882U JP S6237633 Y2 JPS6237633 Y2 JP S6237633Y2
Authority
JP
Japan
Prior art keywords
wafer
fixing
angle
crystal
holding cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982094568U
Other languages
Japanese (ja)
Other versions
JPS58196056U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1982094568U priority Critical patent/JPS58196056U/en
Publication of JPS58196056U publication Critical patent/JPS58196056U/en
Application granted granted Critical
Publication of JPS6237633Y2 publication Critical patent/JPS6237633Y2/ja
Granted legal-status Critical Current

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  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Sampling And Sample Adjustment (AREA)

Description

【考案の詳細な説明】 (a) 考案の技術分野 本考案は薄片の角度研磨治具に係り、特に半導
体装置の製造に用いられる半導体ウエハを所望の
角度に傾斜させてラツプ研磨を行うに好適な角度
研磨治具の改良に関する。
[Detailed description of the invention] (a) Technical field of the invention The invention relates to an angle polishing jig for thin pieces, and is particularly suitable for lap polishing a semiconductor wafer used in the manufacture of semiconductor devices by tilting it at a desired angle. This invention relates to improvements to angle polishing jigs.

(b) 従来技術と問題点 半導体装置を形成する半導体結晶からなるウエ
ハにあつては、平滑で極めて清浄な表面が必要で
あることは勿論のこと、さらに重要なことは、前
記ウエハの主表面が正確に所望とする結晶面、即
ち半導体結晶の結晶軸を基準にしてミラー指数で
表される結晶固有の結晶面、例えば(100),
(110)あるいは(111)面、または場合によつて
は(100)面を(110)面方向に数度傾けた面にス
ライシングされている必要がある。この必要性は
結晶ウエハの主表面が所望とする結晶面より僅か
な角度でもずれていると、そのようなウエハ表面
上に、例えばエピタキシヤル成長法によつて結晶
層を成長させた場合、平滑な結晶成長面、あるい
は良質な結晶層が得られ難く、また該結晶成長層
の電気的特性が予測したものと異なるといつた不
都合があつた。
(b) Prior art and problems Wafers made of semiconductor crystals that form semiconductor devices need to have smooth and extremely clean surfaces, and more importantly, the main surface of the wafer is exactly the desired crystal plane, i.e., the crystal-specific crystal plane expressed by the Miller index based on the crystal axis of the semiconductor crystal, for example (100),
It is necessary to slice the (110) or (111) plane, or in some cases, the (100) plane tilted several degrees in the direction of the (110) plane. This necessity is due to the fact that if the main surface of a crystal wafer deviates from the desired crystal plane even by a slight angle, the crystal layer will not be smooth when grown on such a wafer surface by, for example, epitaxial growth. There are disadvantages in that it is difficult to obtain a crystal growth surface or a high-quality crystal layer, and the electrical characteristics of the crystal growth layer are different from those predicted.

そこで従来においては、半導体結晶からなるイ
ンゴツトをスライシングしたウエハの主表面を、
例えば予めX線回折装置等によつて測定し、該ウ
エハの主表面が所定の結晶面より数度のずれがあ
る場合、第1図に示すように前記結晶面がずれて
いるウエハ1を、一端面が所望とする傾斜角度で
もうけられた柱状の固着具2の固着面3上にその
ずれ方向を対応させて貼着し、該固着具2を図示
の如く案内基準筒4内に挿脱自在に滑合すると共
に前記固着具2を上下動可能にねじ5によつて支
持し、かかる研磨治具を研磨剤を用いて所定のラ
ツプ盤6上に載置した状態で摺動操作して、前記
ウエハ1の主表面を所望とする結晶面に研磨して
いた。
Therefore, in the past, the main surface of a wafer made by slicing an ingot made of semiconductor crystal was
For example, if the main surface of the wafer is measured in advance using an X-ray diffraction device or the like and deviates from a predetermined crystal plane by several degrees, the wafer 1 whose crystal plane is deviated as shown in FIG. A column-shaped fixing tool 2 whose one end surface has a desired inclination angle is pasted on the fixing surface 3 of the columnar fixing tool 2 with its deviation direction corresponding to that of the fixing tool 2, and the fixing tool 2 is inserted into and removed from the guide reference tube 4 as shown in the figure. While freely sliding together, the fixing tool 2 is supported by a screw 5 so as to be movable up and down, and the polishing jig is placed on a predetermined lap board 6 using an abrasive and is operated by sliding. , the main surface of the wafer 1 was polished to a desired crystal plane.

ところがウエハ1の主表面が所定の結晶面より
常に一定角度でずれているわけではなく、複数の
ウエハにあつては様々な角度のずれがあるわけで
あるから、このような角度ずれの異なるウエハを
上述の研磨治具によつてその主表面を所望とする
結晶面に研磨するためには、ウエハ固着面の傾斜
角度が異なる幾種類かの固着具を用意しなければ
ならないといつた経済的な問題と取扱い、および
管理が煩雑化する欠点があつた。そして実際的に
は、角度ずれの異なるすべてウエハに対処できる
多数種の固着具を用意するわけにはいかないの
で、そのような場合には前記ウエハに対してもつ
とも近似的に対処できる傾斜角度のウエハ固着面
を有する固着具を前記案内基準筒4と組合せて用
いることによつて満足せざるを得ない不都合もあ
つた。
However, the main surface of wafer 1 does not always deviate from a predetermined crystal plane at a constant angle, and multiple wafers have deviations at various angles. In order to polish the main surface of the wafer to a desired crystal plane using the polishing jig described above, it is necessary to prepare several types of fixing tools with different angles of inclination of the wafer fixing surface. The problem was that the handling and management became complicated. In reality, it is not possible to prepare multiple types of fixing devices that can handle all wafers with different angles of misalignment, so in such a case, a wafer with an inclination angle that can approximately handle the wafer is used. There was also an inconvenience that had to be satisfied by using a fixing tool having a fixing surface in combination with the guide reference tube 4.

(c) 考案の目的 本考案は上記従来の欠点を除去し、所望の結晶
面に研磨すべきウエハを研磨治具の固着面に固着
した状態で、該ウエハの結晶の基準面からX軸方
向に任意の角度をもつた傾きの面となるように研
磨することは勿論、基準面からY軸方向に任意の
角度をもつた傾きの面となるように容易に調整可
能とした経済的にして、かつ正確に所望の結晶面
にラツプ研磨を行うことができる新規な角度研磨
治具を提供することを目的とするものである。
(c) Purpose of the invention The present invention eliminates the above-mentioned drawbacks of the conventional technology, and while the wafer to be polished to a desired crystal plane is fixed to the fixed surface of the polishing jig, the wafer is polished in the X-axis direction from the reference plane of the crystal of the wafer. Not only can it be polished so that the surface is tilted at any angle in the direction of the Y-axis, but it can also be easily adjusted so that the surface is tilted at any angle in the Y-axis direction from the reference surface. It is an object of the present invention to provide a novel angle polishing jig that can perform lap polishing on a desired crystal plane accurately.

(d) 考案の構成 平坦な基準端面を有する基準外筒21と、該基
準外筒21の内部を挿脱自在に滑合する調整保持
筒26と、該調整保持筒26に傾斜自在に内包さ
れ、球を平行2面で切断した一方の平坦面に被研
磨物固定面を持つ固着台24を備え、前記固着台
25の他の平坦面に係合し、該固着台の傾斜を2
次元方向に調整する少なくとも3個の角度調整ネ
ジ29a,29b,29cと、前記固着台の角度
調整後、前記固着台を固定する複数の係止ネジ3
0a,30b,30cを前記調整保持筒26に設
けてなることを特徴とする角度研磨治具を提供す
ることによつて達成される。
(d) Structure of the device A reference outer cylinder 21 having a flat reference end face, an adjustment holding cylinder 26 that slides into and out of the reference outer cylinder 21, and an adjustment holding cylinder 26 that is included in the adjustment holding cylinder 26 so as to be tiltable. , is provided with a fixing table 24 which has a surface for fixing the object to be polished on one flat surface obtained by cutting a sphere into two parallel planes, and engages with the other flat surface of the fixing table 25 to make the slope of the fixing table 2.
At least three angle adjustment screws 29a, 29b, 29c for adjusting in the dimensional direction, and a plurality of locking screws 3 for fixing the fixing base after adjusting the angle of the fixing base.
This can be achieved by providing an angle polishing jig characterized in that the adjustment holding cylinder 26 is provided with the adjustment holding cylinder 26.

(e) 考案の実施例 以下図面を用いて本考案の好ましい実施例につ
いて詳細に説明する。
(e) Embodiments of the invention Preferred embodiments of the invention will be described in detail below with reference to the drawings.

第2図は本考案に係る角度研磨治具の一実施例
を示す要部断面図であり、第3図は第2図に示す
−′切断線に沿つた横断面図である。これら
両図によつて明らかなように、21は一端が開放
され、かつ平担なラツプ盤33上に接する平担な
基準端面22を有し、他端がねじ孔23を残して
閉塞された耐磨耗性金属からなる基準外筒であ
る。一方、研磨すべき結晶ウエハ34を貼着すべ
き固着台24(以下ウエハ固着台と呼ぶ)は、図
示の如く、少なくとも一端面が平担なウエハ固着
面25を有し、その外周面が球面状となつてお
り、かかるウエハ固着台24は、さらに一端が開
放され、他端が閉塞された筒体27の該閉塞壁に
設けた貫通ねじ穴28より筒体27内へ、本実施
例では3本の角度調整ねじ29a,29bおよび
29cが螺入自在に配設され、かつ該筒体27の
所定外周部位の三方より前記筒体27内へ螺入す
ることにより突出するように係止ねじ30a,3
0bおよび30cが挿設された調整保持筒26内
に図示の如く、その外周面で任意に傾動自在とな
る形で内設されている。
FIG. 2 is a cross-sectional view of a main part of an embodiment of the angle polishing jig according to the present invention, and FIG. 3 is a cross-sectional view taken along the -' cutting line shown in FIG. 2. As is clear from these figures, one end of the 21 is open and has a flat reference end surface 22 that contacts the flat lapping plate 33, and the other end is closed leaving a screw hole 23. This is a reference outer cylinder made of wear-resistant metal. On the other hand, the fixing table 24 (hereinafter referred to as wafer fixing table) to which the crystal wafer 34 to be polished is attached has a wafer fixing surface 25 with at least one flat end surface, as shown in the figure, and its outer peripheral surface is spherical. In this embodiment, the wafer fixing table 24 is inserted into the cylinder 27 through a through screw hole 28 provided in the closed wall of the cylinder 27, which has one end open and the other end closed. Three angle adjustment screws 29a, 29b and 29c are disposed so as to be freely threadable, and a locking screw is provided so as to protrude by being screwed into the cylindrical body 27 from three sides of a predetermined outer peripheral portion of the cylindrical body 27. 30a, 3
0b and 30c are inserted into the adjustment holding cylinder 26, as shown in the figure, so that it can be freely tilted on its outer circumferential surface.

しかして上述した構成の角度研磨治具を用いて
結晶ウエハ34の主表面を、所望とする結晶面に
なるように研磨角度を定めラツプ研磨するには、
まず前記調整保持筒26に内設されたウエハ固着
台24のウエハ固着面25に前記結晶ウエハ34
を例えばワツクス等で固着した後、かかる結晶ウ
エハ34が固着された調整保持筒26を例えば図
示しないX線回折装置に取り付けて前記ウエハ3
4の結晶面を測定しながら前記保持筒26に配設
した3本の角度調整ねじ29a,29bおよび2
9cをウエハ固着台24の背面に当接し、螺入出
する操作によつて所望とする結晶面が得られるよ
うに固着台24を傾動調整して図示のように前記
ウエハ34の研磨角度θを定める。しかる後前記
角度調整ねじ29a,29bおよび29cによつ
て所定に傾けられたウエハ固着台24を、前記係
止ねじ30a,30bおよび30cにより調整保
持筒26に固定し、かかる調整保持筒26を前記
基準外筒1内に滑合すると共にねじ孔23内に貫
通した支柱ねじ31に固定ねじ32を螺入して前
記結晶ウエハ34の研磨しろを調節した状態で支
持する。このように組合せた角度研磨治具を図示
のようにラツプ盤33上に配置して通常のラツプ
研磨を行うようにすれば、従来のようにウエハ固
着面の傾斜角度が異なる多数種の固着台を用意す
ることなく、固着台24に貼着された結晶ウエハ
の基準面からX軸方向およびY軸方向に任意の傾
きの面となるように容易に調整できるので該結晶
ウエハ34の主表面を所望とする結晶面に簡単、
かつ正確にラツプ研磨することが可能となる。
In order to lap polish the main surface of the crystal wafer 34 using the angle polishing jig having the above-described configuration by setting the polishing angle so that the desired crystal plane is obtained,
First, the crystal wafer 34 is placed on the wafer fixing surface 25 of the wafer fixing table 24 installed inside the adjustment holding cylinder 26.
After fixing the crystal wafer 34 with wax or the like, the adjustment holding cylinder 26 to which the crystal wafer 34 is fixed is attached to, for example, an X-ray diffraction apparatus (not shown), and the wafer 3
While measuring the crystal plane of 4, the three angle adjusting screws 29a, 29b and
9c is brought into contact with the back surface of the wafer fixing table 24, and by screwing it in and out, the fixing table 24 is tilted and adjusted so that the desired crystal plane is obtained, and the polishing angle θ of the wafer 34 is determined as shown in the figure. . Thereafter, the wafer fixing table 24 tilted to a predetermined angle by the angle adjustment screws 29a, 29b, and 29c is fixed to the adjustment holding cylinder 26 by the locking screws 30a, 30b, and 30c, and the adjustment holding cylinder 26 is A fixing screw 32 is screwed into a support screw 31 that slides into the reference outer cylinder 1 and passes through the screw hole 23 to support the crystal wafer 34 with the polishing margin adjusted. If the angle polishing jigs combined in this way are arranged on the lapping board 33 as shown in the figure to perform normal lapping polishing, it is possible to use a large number of types of fixing tables with different angles of inclination of the wafer fixing surface, as in the past. The main surface of the crystal wafer 34 can be easily adjusted to have an arbitrary inclination in the X-axis direction and the Y-axis direction from the reference plane of the crystal wafer attached to the fixing table 24 without preparing a Easily create the desired crystal plane.
Moreover, it becomes possible to perform lap polishing accurately.

(f) 考案の効果 以上の説明から明らかなように本考案に係る角
度研磨治具によれば、結晶ウエハを角度研磨治具
を構成する調整保持筒に取り付けた状態で所望の
研磨傾斜角度に正確、かつ容易に調整することが
できるので、結晶ウエハの主表面を所望とする結
晶面に精度よく簡単にラツプ研磨することが可能
となり、当該角度研磨作業の能率も向上する利点
を有し、各種半導体ウエハあるいは各種結晶基板
の結晶修正研磨、および角度研磨等に適用して極
めて有利である。
(f) Effect of the invention As is clear from the above explanation, the angle polishing jig according to the present invention allows the crystal wafer to be polished at a desired angle of inclination while attached to the adjustment holding cylinder constituting the angle polishing jig. Since it can be adjusted accurately and easily, it is possible to easily lap polish the main surface of the crystal wafer to the desired crystal plane with high accuracy, and it has the advantage of improving the efficiency of the angle polishing work. It is extremely advantageous when applied to crystal correction polishing, angle polishing, etc. of various semiconductor wafers or various crystal substrates.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の角度研磨治具を説明するための
概略断面図、第2図および第3図は本考案に係る
角度研磨治具の一実施例を示す要部縦断面図およ
びその−′切断線に沿つた横断面図である。 図面において、21は基準外筒、22は基準端
面、23はねじ孔、24は固着台、25はウエハ
固着面、26は調整保持筒、27は筒体、28は
貫通ねじ穴、29a,29b,29cは角度調整
ねじ、30a,30b,30cは係止ねじ、31
は支柱ねじ、32は固定ねじ、33はラツプ盤、
34は結晶ウエハを示す。
FIG. 1 is a schematic cross-sectional view for explaining a conventional angle polishing jig, and FIGS. 2 and 3 are longitudinal cross-sectional views of essential parts showing an embodiment of the angle polishing jig according to the present invention. FIG. 3 is a cross-sectional view taken along a cutting line. In the drawing, 21 is a reference outer cylinder, 22 is a reference end surface, 23 is a screw hole, 24 is a fixing base, 25 is a wafer fixing surface, 26 is an adjustment holding cylinder, 27 is a cylinder body, 28 is a through screw hole, 29a, 29b , 29c are angle adjustment screws, 30a, 30b, 30c are locking screws, 31
is a prop screw, 32 is a fixing screw, 33 is a lap board,
34 indicates a crystal wafer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 平坦な基準端面を有する基準外筒21と、該基
準外筒21の内部を挿脱自在に滑合する調整保持
筒26と、該調整保持筒26に傾斜自在に内包さ
れ、球を平行2面で切断した一方の平坦面に被研
磨物固定面を持つ固着台24を備え、前記固着台
25の他の平坦面に係合し、該固着台の傾斜を2
次元方向に調整する少なくとも3個の角度調整ネ
ジ29a,29b,29cと、前記固着台の角度
調整後、前記固着台を固定する複数の係止ネジ3
0a,30b,30cを前記調整保持筒26に設
けてなることを特徴とする角度研磨治具。
A reference outer cylinder 21 having a flat reference end face, an adjustment holding cylinder 26 that slides in and out of the reference outer cylinder 21, and an adjustment holding cylinder 26 that is included in the adjustment holding cylinder 26 so that it can be tilted freely, and that holds the sphere in two parallel planes. A fixing table 24 having a surface for fixing the object to be polished is provided on one flat surface cut at
At least three angle adjustment screws 29a, 29b, 29c for adjusting in the dimensional direction, and a plurality of locking screws 3 for fixing the fixing base after adjusting the angle of the fixing base.
0a, 30b, and 30c are provided on the adjustment holding cylinder 26.
JP1982094568U 1982-06-23 1982-06-23 Angle polishing jig Granted JPS58196056U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1982094568U JPS58196056U (en) 1982-06-23 1982-06-23 Angle polishing jig

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1982094568U JPS58196056U (en) 1982-06-23 1982-06-23 Angle polishing jig

Publications (2)

Publication Number Publication Date
JPS58196056U JPS58196056U (en) 1983-12-27
JPS6237633Y2 true JPS6237633Y2 (en) 1987-09-25

Family

ID=30226309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1982094568U Granted JPS58196056U (en) 1982-06-23 1982-06-23 Angle polishing jig

Country Status (1)

Country Link
JP (1) JPS58196056U (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2599918B2 (en) * 1987-07-01 1997-04-16 オリンパス光学工業株式会社 Polishing holding device
JP2599531Y2 (en) * 1989-03-30 1999-09-13 工業技術院長 Rock sample holder for polarizing microscope sample maker
JP4675860B2 (en) * 2006-08-09 2011-04-27 株式会社日立ハイテクノロジーズ Ion milling apparatus and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53125189U (en) * 1977-03-14 1978-10-04

Also Published As

Publication number Publication date
JPS58196056U (en) 1983-12-27

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