JPS6236989B2 - - Google Patents

Info

Publication number
JPS6236989B2
JPS6236989B2 JP57019640A JP1964082A JPS6236989B2 JP S6236989 B2 JPS6236989 B2 JP S6236989B2 JP 57019640 A JP57019640 A JP 57019640A JP 1964082 A JP1964082 A JP 1964082A JP S6236989 B2 JPS6236989 B2 JP S6236989B2
Authority
JP
Japan
Prior art keywords
sintered body
silicon carbide
weight
thermal conductivity
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57019640A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57166368A (en
Inventor
Yukio Takeda
Kosuke Nakamura
Yasuo Matsushita
Tokio Oogoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57019640A priority Critical patent/JPS57166368A/ja
Publication of JPS57166368A publication Critical patent/JPS57166368A/ja
Publication of JPS6236989B2 publication Critical patent/JPS6236989B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

Landscapes

  • Ceramic Products (AREA)
JP57019640A 1982-02-12 1982-02-12 High heat conductivity silicon carbide sintered body Granted JPS57166368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57019640A JPS57166368A (en) 1982-02-12 1982-02-12 High heat conductivity silicon carbide sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57019640A JPS57166368A (en) 1982-02-12 1982-02-12 High heat conductivity silicon carbide sintered body

Publications (2)

Publication Number Publication Date
JPS57166368A JPS57166368A (en) 1982-10-13
JPS6236989B2 true JPS6236989B2 (cg-RX-API-DMAC7.html) 1987-08-10

Family

ID=12004817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57019640A Granted JPS57166368A (en) 1982-02-12 1982-02-12 High heat conductivity silicon carbide sintered body

Country Status (1)

Country Link
JP (1) JPS57166368A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPS57166368A (en) 1982-10-13

Similar Documents

Publication Publication Date Title
US4370421A (en) Electrically insulating substrate and a method of making such a substrate
JPS63156075A (ja) 半導体素子搭載用電気絶縁性窒化アルミニウム基板及びその製造方法
JPS6337065B2 (cg-RX-API-DMAC7.html)
JPS638261A (ja) 多結晶炭化ケイ素からの電気絶縁性基体材料と、アイソスタチツク熱間圧縮によるその製造方法
JPS6236989B2 (cg-RX-API-DMAC7.html)
JPS5815953B2 (ja) 電気的装置用基板
JPS6236988B2 (cg-RX-API-DMAC7.html)
JPH1179872A (ja) メタライズ窒化ケイ素系セラミックス、その製造方法及びその製造に用いるメタライズ組成物
JPS5969473A (ja) 電気絶縁性焼結材用炭化けい素粉末組成物
JPH0247856B2 (cg-RX-API-DMAC7.html)
JP2677748B2 (ja) セラミックス銅回路基板
JPS631268B2 (cg-RX-API-DMAC7.html)
JPH0313190B2 (cg-RX-API-DMAC7.html)
JPH1112039A (ja) 高放熱リッド用の窒化アルミニウム系焼結体の製造方法
JPH01252584A (ja) 複合セラミックス焼結体およびその製造方法
JP4461513B2 (ja) アルミニウム−炭化珪素系複合材料およびその製造方法
JPS593436B2 (ja) 焼結用炭火ケイ素粉末組成物
JPH0442861A (ja) 高強度な窒化アルミニウム焼結体の製造方法
JPS6036376A (ja) 炭化ケイ素系抵抗材料及びその製造方法
JPH0522670B2 (cg-RX-API-DMAC7.html)
JPS60239366A (ja) 窒化アルミニウム焼結体の製造方法
JPS59162177A (ja) 電気絶縁性炭化ケイ素粉末組成物
JPS6227487B2 (cg-RX-API-DMAC7.html)
JPS6252181A (ja) 窒化アルミニウム焼結体の製造方法
JPH0470776B2 (cg-RX-API-DMAC7.html)