JPS6236097A - 単結晶の製造方法およびその装置 - Google Patents
単結晶の製造方法およびその装置Info
- Publication number
- JPS6236097A JPS6236097A JP17394085A JP17394085A JPS6236097A JP S6236097 A JPS6236097 A JP S6236097A JP 17394085 A JP17394085 A JP 17394085A JP 17394085 A JP17394085 A JP 17394085A JP S6236097 A JPS6236097 A JP S6236097A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- crucible
- magnetic field
- crystal
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000155 melt Substances 0.000 abstract description 12
- 238000010828 elution Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000000750 progressive effect Effects 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 20
- 229910052760 oxygen Inorganic materials 0.000 description 20
- 239000001301 oxygen Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17394085A JPS6236097A (ja) | 1985-08-07 | 1985-08-07 | 単結晶の製造方法およびその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17394085A JPS6236097A (ja) | 1985-08-07 | 1985-08-07 | 単結晶の製造方法およびその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6236097A true JPS6236097A (ja) | 1987-02-17 |
| JPH0351673B2 JPH0351673B2 (enrdf_load_html_response) | 1991-08-07 |
Family
ID=15969882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17394085A Granted JPS6236097A (ja) | 1985-08-07 | 1985-08-07 | 単結晶の製造方法およびその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6236097A (enrdf_load_html_response) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02292428A (ja) * | 1989-04-30 | 1990-12-03 | Kudan Kenchiku Kenkyusho:Kk | 現場打設コンクリート充填型ｐｃ梁 |
| US5038875A (en) * | 1988-09-07 | 1991-08-13 | Ishida Scales Mfg. Co. Ltd. | Waterproof automatic weighing apparatus |
| WO2013035498A1 (ja) * | 2011-09-09 | 2013-03-14 | シャープ株式会社 | 多結晶シリコンインゴットの製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6036392A (ja) * | 1983-08-05 | 1985-02-25 | Toshiba Corp | 単結晶引上装置 |
-
1985
- 1985-08-07 JP JP17394085A patent/JPS6236097A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6036392A (ja) * | 1983-08-05 | 1985-02-25 | Toshiba Corp | 単結晶引上装置 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5038875A (en) * | 1988-09-07 | 1991-08-13 | Ishida Scales Mfg. Co. Ltd. | Waterproof automatic weighing apparatus |
| JPH02292428A (ja) * | 1989-04-30 | 1990-12-03 | Kudan Kenchiku Kenkyusho:Kk | 現場打設コンクリート充填型ｐｃ梁 |
| WO2013035498A1 (ja) * | 2011-09-09 | 2013-03-14 | シャープ株式会社 | 多結晶シリコンインゴットの製造方法 |
| JP2013056812A (ja) * | 2011-09-09 | 2013-03-28 | Sharp Corp | 多結晶シリコンインゴットの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0351673B2 (enrdf_load_html_response) | 1991-08-07 |
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