JPH0351673B2 - - Google Patents

Info

Publication number
JPH0351673B2
JPH0351673B2 JP60173940A JP17394085A JPH0351673B2 JP H0351673 B2 JPH0351673 B2 JP H0351673B2 JP 60173940 A JP60173940 A JP 60173940A JP 17394085 A JP17394085 A JP 17394085A JP H0351673 B2 JPH0351673 B2 JP H0351673B2
Authority
JP
Japan
Prior art keywords
crystal
crucible
magnetic field
melt
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60173940A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6236097A (ja
Inventor
Osamu Haida
Matao Araya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP17394085A priority Critical patent/JPS6236097A/ja
Publication of JPS6236097A publication Critical patent/JPS6236097A/ja
Publication of JPH0351673B2 publication Critical patent/JPH0351673B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP17394085A 1985-08-07 1985-08-07 単結晶の製造方法およびその装置 Granted JPS6236097A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17394085A JPS6236097A (ja) 1985-08-07 1985-08-07 単結晶の製造方法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17394085A JPS6236097A (ja) 1985-08-07 1985-08-07 単結晶の製造方法およびその装置

Publications (2)

Publication Number Publication Date
JPS6236097A JPS6236097A (ja) 1987-02-17
JPH0351673B2 true JPH0351673B2 (enrdf_load_html_response) 1991-08-07

Family

ID=15969882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17394085A Granted JPS6236097A (ja) 1985-08-07 1985-08-07 単結晶の製造方法およびその装置

Country Status (1)

Country Link
JP (1) JPS6236097A (enrdf_load_html_response)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68903820T2 (de) * 1988-09-07 1993-07-01 Ishida Scale Mfg Co Ltd Wasserdichtes automatisches wiegegeraet.
JPH02292428A (ja) * 1989-04-30 1990-12-03 Kudan Kenchiku Kenkyusho:Kk 現場打設コンクリート充填型pc梁
JP2013056812A (ja) * 2011-09-09 2013-03-28 Sharp Corp 多結晶シリコンインゴットの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6036392A (ja) * 1983-08-05 1985-02-25 Toshiba Corp 単結晶引上装置

Also Published As

Publication number Publication date
JPS6236097A (ja) 1987-02-17

Similar Documents

Publication Publication Date Title
US5363796A (en) Apparatus and method of growing single crystal
US3716345A (en) Czochralski crystallization of gallium arsenide using a boron oxide sealed device
CA1336061C (en) High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor
JPH11268987A (ja) シリコン単結晶およびその製造方法
JP3086850B2 (ja) 単結晶の成長方法及び装置
JPH0212920B2 (enrdf_load_html_response)
JP2688137B2 (ja) シリコン単結晶の引上げ方法
JPS5850953B2 (ja) 結晶成長法
US5840116A (en) Method of growing crystals
JPH0351673B2 (enrdf_load_html_response)
JPH03115188A (ja) 単結晶製造方法
GB2120954A (en) Reducing impurity levels in pulled single crystals
JP3750440B2 (ja) 単結晶引上方法
JPS5850951B2 (ja) 結晶の成長方法とこれに用いる結晶成長装置
JPH0524969A (ja) 結晶成長装置
JPS6236096A (ja) 単結晶の製造方法およびその装置
JPH0480875B2 (enrdf_load_html_response)
JP3018738B2 (ja) 単結晶製造装置
JPH07277875A (ja) 結晶成長方法
Hoshikawa et al. Control of oxygen concentration in CZ silicon growth
JPS6317291A (ja) 結晶成長方法及びその装置
JP2758038B2 (ja) 単結晶製造装置
JPH09235192A (ja) 低酸素濃度単結晶インゴット及び単結晶引上方法
JPS61158897A (ja) 化合物半導体単結晶の引上げ方法
JPH0733304B2 (ja) 結晶成長方法