JPS623594B2 - - Google Patents

Info

Publication number
JPS623594B2
JPS623594B2 JP53000740A JP74078A JPS623594B2 JP S623594 B2 JPS623594 B2 JP S623594B2 JP 53000740 A JP53000740 A JP 53000740A JP 74078 A JP74078 A JP 74078A JP S623594 B2 JPS623594 B2 JP S623594B2
Authority
JP
Japan
Prior art keywords
gate
region
source
channel
fixed potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53000740A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5493982A (en
Inventor
Junichi Nishizawa
Tadahiro Oomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP74078A priority Critical patent/JPS5493982A/ja
Publication of JPS5493982A publication Critical patent/JPS5493982A/ja
Priority to US06/939,259 priority patent/US4985738A/en
Publication of JPS623594B2 publication Critical patent/JPS623594B2/ja
Priority to US07/640,114 priority patent/US5175598A/en
Priority to US07/640,082 priority patent/US5227647A/en
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP74078A 1978-01-06 1978-01-06 Electrostatic induction semiconductor Granted JPS5493982A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP74078A JPS5493982A (en) 1978-01-06 1978-01-06 Electrostatic induction semiconductor
US06/939,259 US4985738A (en) 1978-01-06 1986-12-05 Semiconductor switching device
US07/640,114 US5175598A (en) 1978-01-06 1991-01-11 Semiconductor switching device
US07/640,082 US5227647A (en) 1978-01-06 1991-01-11 Semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP74078A JPS5493982A (en) 1978-01-06 1978-01-06 Electrostatic induction semiconductor

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP61150123A Division JPS62174972A (ja) 1986-06-26 1986-06-26 両面ゲ−ト型静電誘導サイリスタ
JP15012286A Division JPS62174971A (ja) 1986-06-26 1986-06-26 静電誘導サイリスタ

Publications (2)

Publication Number Publication Date
JPS5493982A JPS5493982A (en) 1979-07-25
JPS623594B2 true JPS623594B2 (enrdf_load_html_response) 1987-01-26

Family

ID=11482103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP74078A Granted JPS5493982A (en) 1978-01-06 1978-01-06 Electrostatic induction semiconductor

Country Status (1)

Country Link
JP (1) JPS5493982A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPS5493982A (en) 1979-07-25

Similar Documents

Publication Publication Date Title
US4994872A (en) Insulated gate static induction transistor and integrated circuit including same
US5014102A (en) MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
US4772926A (en) Insulated gate static induction type thyristor
US5357125A (en) Power switching semiconductor device including SI thyristor and MOSFET connected in cascade
JPH027532A (ja) 積層チャネル電界効果トランジスタ
JPH0147024B2 (enrdf_load_html_response)
JP2001060684A (ja) 半導体装置
US5153682A (en) HEMT device with doped active layer
JPS639671B2 (enrdf_load_html_response)
JPH01218067A (ja) バイポーラ型半導体スイッチング装置
US5670804A (en) PN-junction gate FET
JPH0213937B2 (enrdf_load_html_response)
JPS623594B2 (enrdf_load_html_response)
JPS6212674B2 (enrdf_load_html_response)
JPS6124832B2 (enrdf_load_html_response)
JP3375274B2 (ja) Ｍｏｓ制御デバイス
JPS6228586B2 (enrdf_load_html_response)
JPS633466B2 (enrdf_load_html_response)
JP3189543B2 (ja) 半導体装置
JPH05267674A (ja) 半導体装置
JPS6028394B2 (ja) 半導体集積回路
JP3073056B2 (ja) 静電誘導半導体装置
JPH0715018A (ja) 電界効果トランジスタ
JPH045274B2 (enrdf_load_html_response)
US4340827A (en) Semiconductor integrated circuit