JPS6233683B2 - - Google Patents
Info
- Publication number
- JPS6233683B2 JPS6233683B2 JP56064152A JP6415281A JPS6233683B2 JP S6233683 B2 JPS6233683 B2 JP S6233683B2 JP 56064152 A JP56064152 A JP 56064152A JP 6415281 A JP6415281 A JP 6415281A JP S6233683 B2 JPS6233683 B2 JP S6233683B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- sintered body
- dielectric constant
- insulating material
- low dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 36
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 21
- 239000011810 insulating material Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 5
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims 1
- 150000001573 beryllium compounds Chemical class 0.000 claims 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 5
- 238000010292 electrical insulation Methods 0.000 description 5
- 239000011812 mixed powder Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012772 electrical insulation material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 Each element Inorganic materials 0.000 description 1
- 238000000815 Acheson method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12576—Boride, carbide or nitride component
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Inorganic Insulating Materials (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56064152A JPS57180005A (en) | 1981-04-30 | 1981-04-30 | Silicon carbide electric insulator with low dielectric constant |
| KR1019820001786A KR840000049A (ko) | 1981-04-30 | 1982-04-12 | 유전율(誘電率)이 낮은 탄화규소전기절연재 및 그 제법 |
| DE8282302184T DE3274972D1 (en) | 1981-04-30 | 1982-04-28 | Silicon carbide electrical insulator material of low dielectric constant and manufacturing method therefor |
| EP82302184A EP0064386B1 (en) | 1981-04-30 | 1982-04-28 | Silicon carbide electrical insulator material of low dielectric constant and manufacturing method therefor |
| US06/373,261 US4544642A (en) | 1981-04-30 | 1982-04-29 | Silicon carbide electrical insulator material of low dielectric constant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56064152A JPS57180005A (en) | 1981-04-30 | 1981-04-30 | Silicon carbide electric insulator with low dielectric constant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57180005A JPS57180005A (en) | 1982-11-05 |
| JPS6233683B2 true JPS6233683B2 (ko) | 1987-07-22 |
Family
ID=13249807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56064152A Granted JPS57180005A (en) | 1981-04-30 | 1981-04-30 | Silicon carbide electric insulator with low dielectric constant |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4544642A (ko) |
| EP (1) | EP0064386B1 (ko) |
| JP (1) | JPS57180005A (ko) |
| KR (1) | KR840000049A (ko) |
| DE (1) | DE3274972D1 (ko) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5969473A (ja) * | 1982-10-06 | 1984-04-19 | 株式会社日立製作所 | 電気絶縁性焼結材用炭化けい素粉末組成物 |
| US4701427A (en) * | 1985-10-17 | 1987-10-20 | Stemcor Corporation | Sintered silicon carbide ceramic body of high electrical resistivity |
| US4775596A (en) * | 1987-02-18 | 1988-10-04 | Corning Glass Works | Composite substrate for integrated circuits |
| DE68922572T2 (de) * | 1988-10-21 | 1995-09-07 | Honda Motor Co Ltd | Mit Siliziumkarbid verstärkter Verbundwerkstoff aus einer Leichtmetallegierung. |
| JPH1179846A (ja) * | 1997-09-01 | 1999-03-23 | Tokai Carbon Co Ltd | 炭化珪素成形体 |
| WO2006072071A2 (en) | 2004-12-30 | 2006-07-06 | Phoseon Technology Inc. | Methods and systems relating to light sources for use in industrial processes |
| WO2003096387A2 (en) | 2002-05-08 | 2003-11-20 | Phoseon Technology, Inc. | High efficiency solid-state light source and methods of use and manufacture |
| US7524085B2 (en) | 2003-10-31 | 2009-04-28 | Phoseon Technology, Inc. | Series wiring of highly reliable light sources |
| WO2005041632A2 (en) | 2003-10-31 | 2005-05-12 | Phoseon Technology, Inc. | Collection optics for led array with offset hemispherical or faceted surfaces |
| EP1735844B1 (en) * | 2004-03-18 | 2019-06-19 | Phoseon Technology, Inc. | Use of a high-density light emitting diode array comprising micro-reflectors for curing applications |
| US7816638B2 (en) | 2004-03-30 | 2010-10-19 | Phoseon Technology, Inc. | LED array having array-based LED detectors |
| EP1738156A4 (en) | 2004-04-19 | 2017-09-27 | Phoseon Technology, Inc. | Imaging semiconductor strucutures using solid state illumination |
| US7642527B2 (en) | 2005-12-30 | 2010-01-05 | Phoseon Technology, Inc. | Multi-attribute light effects for use in curing and other applications involving photoreactions and processing |
| JP5835722B2 (ja) | 2009-12-10 | 2015-12-24 | オルボテック エルティ ソラー，エルエルシー | 自動順位付け多方向直列型処理装置 |
| US20110315081A1 (en) * | 2010-06-25 | 2011-12-29 | Law Kam S | Susceptor for plasma processing chamber |
| US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3960577A (en) * | 1974-01-08 | 1976-06-01 | General Electric Company | Dense polycrystalline silicon carbide |
| US4023975A (en) * | 1975-11-17 | 1977-05-17 | General Electric Company | Hot pressed silicon carbide containing beryllium carbide |
| US4172109A (en) * | 1976-11-26 | 1979-10-23 | The Carborundum Company | Pressureless sintering beryllium containing silicon carbide powder composition |
| DE2803658A1 (de) * | 1977-01-27 | 1978-08-10 | Kyoto Ceramic | Verfahren zur herstellung von dichten, gesinterten siliciumcarbidkoerpern aus polycarbosilan |
| US4209474A (en) * | 1977-08-31 | 1980-06-24 | General Electric Company | Process for preparing semiconducting silicon carbide sintered body |
| DE2927226A1 (de) * | 1979-07-05 | 1981-01-08 | Kempten Elektroschmelz Gmbh | Dichte formkoerper aus polykristallinem beta -siliciumcarbid und verfahren zu ihrer herstellung durch heisspressen |
| DE3064598D1 (en) * | 1979-11-05 | 1983-09-22 | Hitachi Ltd | Electrically insulating substrate and a method of making such a substrate |
-
1981
- 1981-04-30 JP JP56064152A patent/JPS57180005A/ja active Granted
-
1982
- 1982-04-12 KR KR1019820001786A patent/KR840000049A/ko unknown
- 1982-04-28 EP EP82302184A patent/EP0064386B1/en not_active Expired
- 1982-04-28 DE DE8282302184T patent/DE3274972D1/de not_active Expired
- 1982-04-29 US US06/373,261 patent/US4544642A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR840000049A (ko) | 1984-01-30 |
| US4544642A (en) | 1985-10-01 |
| EP0064386B1 (en) | 1987-01-07 |
| EP0064386A2 (en) | 1982-11-10 |
| JPS57180005A (en) | 1982-11-05 |
| DE3274972D1 (en) | 1987-02-12 |
| EP0064386A3 (en) | 1984-07-04 |
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