KR840000049A - 유전율(誘電率)이 낮은 탄화규소전기절연재 및 그 제법 - Google Patents

유전율(誘電率)이 낮은 탄화규소전기절연재 및 그 제법 Download PDF

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KR840000049A
KR840000049A KR1019820001786A KR820001786A KR840000049A KR 840000049 A KR840000049 A KR 840000049A KR 1019820001786 A KR1019820001786 A KR 1019820001786A KR 820001786 A KR820001786 A KR 820001786A KR 840000049 A KR840000049 A KR 840000049A
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silicon carbide
dielectric constant
low dielectric
sintered
electrical insulation
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구니히로 마에다 (외 1)
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미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Abstract

내용 없음

Description

유전율(誘電率)이 낮은 탄화규소전기절연재 및 그 제법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제7도는 본원 발명의 탄화규소 소결체를 사용한 반도체 장치의 단면도.

Claims (22)

  1. 탄화성분을 주성분으로 하고, 이것에 소결상태로 전기절연성을 부여하는 원소를 포함하며, 전기절연성을 갖는 소결체에 있어서, 이 소결체는 주기율표의 V족의 원소를 포함하고, 탄화규소의 결정내의 캐리어 농도가 5×1017cm-3이하인 것을 특징으로 하는 유전율이 낮은 탄화규소질 전기절연재.
  2. 상기 탄화규소는 85중량% 이상인 특허청구 범위 1 기재의 유전율이 낮은 탄화규소질 전기절연재.
  3. 상기 절연성을 부여하는 원소는 Be이며, 그 함유량이 0.1∼3.5중량%인 특허청구의 범위 1 또는 2 기재의 유전율이 낮은 탄화규소질 전기절연재.
  4. 상기 Be는 금속 Be 또는 Be화합물인 특허청구의 범위 3 기재의 유전율이 낮은 탄화규소질 전기절연재.
  5. 상기 Be화합물은 Be산화물 또는 Be탄화물인 특허청구의 범위 4 기재의 유전율이 낮은 탄화규소질 전기절연재.
  6. 상기 원소주기율표의 V족의 원소는 니오브, 질소, 인, 비소, 안티몬, 비스무드의 적어도 1종으로 이루어지며, 그 일종 또는 2종 이상의 합계의 함유량이 0.05∼0.5몰%인 특허청구의 범위 1∼5의 어딘가에 기재한 유전율이 낮은 탄화규소질 전기절연재.
  7. 상기 소결체의 탄화규소결정립은 p형 반도체인 특허청구 범위 1∼6 어딘가에 기재한 유전율이 낮은 탄화규소질 전기절연재.
  8. 상기 소결체는 이론밀도의 95%이상의 밀도를 갖는 특허청구 범위 1∼7 어딘가에 기재한 유전율이 낮은 탄화규소질 전기절연재.
  9. 상기 소결체는 실온의 저항비가 107Ωcm이상 및 실온의 열전도율이 0.4cal/cm·sec·℃이상인 특허청구 범위 1∼8의 어딘가의 기재한 유전율이 낮은 탄화규소질 전기절연재.
  10. 탄화규소가 85중량% 이상을 가지며, 이것에 Be0.1∼3.5중량%의 Be산화물을 포함하고 이론밀도 95%이상의 밀도를 가지며, 실온의 비저항이 109Ωcm 및 실온의 열전도율이 0.4cal/cm·sec·℃이상인 전기절연성 소결체에 있어서, 이 소결체는 주기율표의 V족의 원소를 포함하며 탄화규소의 결정입내의 액셉터의 캐리어의 농도가 5×1017cm-3이하인 것을 특징으로 하는 유전율이 낮은 탄화규소질 전기절연재.
  11. 탄화규소를 주성분으로 하는 소결체의 제법에 있어서, 탄화규소분말, 소결상태에서 전기절연성을 부여하는 원소의 분말, 소결상태에서 탄화규소의 결정립내의 캐리어농도가 5×1017cm-3이하가 되는 첨가량의 주기율표의 V족의 원소의 분말, 실리콘수지 및 유기용매로 이루어진 혼합분말을 가압성형한 다음, 그 성형체를 호트프레스 소결하는 것을 특징으로 하는 유전율이 낮은 탄화규소질 전기절연재의 제법.
  12. 소결상태에서 탄화규소 85중량% 이상, Be 0.1∼3.5중량%의 Be산화물 및 소결상태에서 탄화규소의 결정립내의 캐리어 농도가 5×1017cm-3이하로 되는 첨가량의 주기율표 V족의 원소를 갖는 각 분말에 상기 실리콘 수지 및 유기용매를9포함하는 혼합분말 가압성형한 후, 그 성형체를 1850∼2500℃, 100∼300kg/cm2로 비산화성분위기 중에서 호트프레스하는 것을 특징으로 하는 유전율이 낮은 탄화규소질 전기절연재의 제법.
  13. 상기 호트프레스는 2000℃ 이하의 온도에서 가소결한 다음, 그것보다 높은 온도에서 본 소결하는 특허청구의 범위 11 또는 12 기재의 유전율이 낮은 탄화규소질 전기절연재의 제법.
  14. 상기 혼합 분말을 조립(造粒)한 다음, 상기 가압성형하는 특허청구범위 11 ∼13의 어딘가에 기재한 유전율이 낮은 탄화규소질 전기절연재의 제법.
  15. 상기 탄화규소분말, 상기 절연성을 부여하는 원소의 분말 및 상기 V족의 원소의 분말은 평균 입경이 10㎛이하인 특허청구의 범위 11∼14의 어딘가에 기재한 유전율이 낮은 탄화규소 전기절연재의 제법.
  16. 탄화규소를 주성분으로 하고, 이것에 소결상태에서 질전기절연성을 부여하는 원소 및 주기율표의 V족의 원소를 포함하며, 소결상태에서의 탄화규소의 결정립내의 캐리어농도가 5×1017cm-3이하이며, 전기절연성을 갖는 소결체로 이루어진 기판상에 반도체소자가 직접 재치해서 접합되어 있는 것은 특징으로 하는 반도체 장치.
  17. 상기 탄화규소는 85중량%이상이며, 상기 전지절연성을 부여하는 원소가 벨리륨이고, 그 함유량이 0.1∼3.5중량%인 특허청구의 범위 16기재의 반도체 장치.
  18. 상기 벨리륨은 벨리륨 산화물이며 상기 V족인 원소가 니오브, 질소, 인, 비소, 안티몬, 비스무트의 적어도 1종 또는 2이상의 합계량이 0.05∼0.5몰%인 특허청구의 범위 16 또는 17 기재의 반도체 장치.
  19. 상기 소결체의 탄화규소의 결정립은 p형 반도체이며 상기 소결체의 밀도는 이론밀도의 95%이상인 특허청구의 범위 16∼18의 어딘가에 기재한 반도체 장치.
  20. 상기 소결체는 실온의 비저항이 1010Ω·cm이상 실온의 열전도율이 0.4cal/cm·sec·℃이상 및 열팽창율이 실리콘의 그것에 근사한 특허청구의 범위 16∼19의 어딘가에 기재한 반도체 장치.
  21. 상기 반도체 소자는 상기 기판에 형상된 메타라이즈층을 통해서 납땜되어 있는 특허청구의 범위 16∼20의 어딘가에 기재한 반도체 장치.
  22. 상기 메타라이즈층은 Mn을 포함하는 금속층으로 이루어진 특허청구의 범위 21 기재의 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019820001786A 1981-04-30 1982-04-12 유전율(誘電率)이 낮은 탄화규소전기절연재 및 그 제법 KR840000049A (ko)

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JP64152 1981-04-30
JP56064152A JPS57180005A (en) 1981-04-30 1981-04-30 Silicon carbide electric insulator with low dielectric constant

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US (1) US4544642A (ko)
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JPS6233683B2 (ko) 1987-07-22
EP0064386A2 (en) 1982-11-10
US4544642A (en) 1985-10-01

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