JPS6232613B2 - - Google Patents

Info

Publication number
JPS6232613B2
JPS6232613B2 JP5066280A JP5066280A JPS6232613B2 JP S6232613 B2 JPS6232613 B2 JP S6232613B2 JP 5066280 A JP5066280 A JP 5066280A JP 5066280 A JP5066280 A JP 5066280A JP S6232613 B2 JPS6232613 B2 JP S6232613B2
Authority
JP
Japan
Prior art keywords
electron beam
reference point
aperture
deflection
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5066280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56147437A (en
Inventor
Hiroshi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5066280A priority Critical patent/JPS56147437A/ja
Publication of JPS56147437A publication Critical patent/JPS56147437A/ja
Publication of JPS6232613B2 publication Critical patent/JPS6232613B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
JP5066280A 1980-04-17 1980-04-17 Electron beam exposure method Granted JPS56147437A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5066280A JPS56147437A (en) 1980-04-17 1980-04-17 Electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5066280A JPS56147437A (en) 1980-04-17 1980-04-17 Electron beam exposure method

Publications (2)

Publication Number Publication Date
JPS56147437A JPS56147437A (en) 1981-11-16
JPS6232613B2 true JPS6232613B2 (ko) 1987-07-15

Family

ID=12865158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5066280A Granted JPS56147437A (en) 1980-04-17 1980-04-17 Electron beam exposure method

Country Status (1)

Country Link
JP (1) JPS56147437A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121625A (ja) * 1981-12-28 1983-07-20 Fujitsu Ltd 電子ビ−ム露光装置
JPS5961134A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 荷電ビ−ム露光装置
JPS62172724A (ja) * 1986-01-27 1987-07-29 Toshiba Corp 荷電ビ−ム露光方法

Also Published As

Publication number Publication date
JPS56147437A (en) 1981-11-16

Similar Documents

Publication Publication Date Title
KR100372060B1 (ko) 전자빔 노광 방법
KR940006209B1 (ko) 충전입자 비임 노출방법 및 장치
EP0033138B1 (en) A method for correcting deflection distortions in an apparatus for charged particle lithography
EP0022329B1 (en) Electron beam exposure method
US4763004A (en) Calibration method for electron beam exposer
US5285074A (en) Dynamic compensation of non-linear electron beam landing angle in variable axis lenses
JPS6232613B2 (ko)
US4413187A (en) Method for exposing an electron beam
US4737646A (en) Method of using an electron beam
TW472298B (en) Electron beam exposure apparatus, adjusting method, and block mask for adjustment
JPH0669112A (ja) 透過マスク板
JP2950283B2 (ja) 電子線アライメント方法及び装置
JP2706599B2 (ja) 電子線描画方法とその装置
JP2865164B2 (ja) 粒子線描画装置
JP3242122B2 (ja) パターン形成方法および半導体装置の製造方法
JP3340595B2 (ja) 荷電粒子ビーム描画方法
JP3232583B2 (ja) 電子線描画装置
JPH03188616A (ja) 電子ビーム露光装置
JP3334341B2 (ja) 電子ビーム露光方法
JPH06104163A (ja) 電子線描画装置の焦点補正法
JP2786662B2 (ja) 荷電ビーム描画方法
JP3366182B2 (ja) 荷電粒子ビーム露光装置及びその露光方法
JP2796121B2 (ja) 電子線描画方法および電子線描画装置
JPS6139354A (ja) 電子ビ−ム露光装置用ブランキング装置
JPH11145037A (ja) 電子ビーム描画装置及びマーク位置の検出方法