JPS56147437A - Electron beam exposure method - Google Patents

Electron beam exposure method

Info

Publication number
JPS56147437A
JPS56147437A JP5066280A JP5066280A JPS56147437A JP S56147437 A JPS56147437 A JP S56147437A JP 5066280 A JP5066280 A JP 5066280A JP 5066280 A JP5066280 A JP 5066280A JP S56147437 A JPS56147437 A JP S56147437A
Authority
JP
Japan
Prior art keywords
deflected
electron beam
pattern
mark
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5066280A
Other languages
Japanese (ja)
Other versions
JPS6232613B2 (en
Inventor
Hiroshi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5066280A priority Critical patent/JPS56147437A/en
Publication of JPS56147437A publication Critical patent/JPS56147437A/en
Publication of JPS6232613B2 publication Critical patent/JPS6232613B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To accurately lithograph an oblique pattern by a method wherein microbeams near two reference points of the second diaphragm are used to scan the mark on the surface of a sample in order to obtain the displacement amounts of the projection positions of both the reference points, and the diflection amount is corrected according to said amounts. CONSTITUTION:An alignment mark 35 on a sample 12 is scanned by using the electron beam 36 which is deflected 7 so that the overlap of the image 14 of the first diaphragm 5 and the aperture 15 of the second diaphragm is located near a reference point K. The electrons reflected from end portions 37 are detected 32, and peak signals 34 are sent to a CPU21 to obtain the central coordinates of the mark. Then, the electron beam 36 is deflected 7 again to form a microbeam near the second reference point K' in order to scan the mark 35, and the central coordinates thereof are obtained. Differences DELTAx and DELTAy between both the central coordinates are obtained in the CPU21 and stored 27. When an oblique pattern is lithographed, the pattern is read out 24 to deflect 7 the electron beam, which is moreover deflected 11 by adding 29 the read-out position- designating signals to the deflection correcting amounts DELTAx and DELTAy so that the beam having a section of the oblique pattern is deflected to a given position. Thereby, the position of the oblique pattern is designated by using the reference point K of a rectangular pattern, so that lithography is accurately performed.
JP5066280A 1980-04-17 1980-04-17 Electron beam exposure method Granted JPS56147437A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5066280A JPS56147437A (en) 1980-04-17 1980-04-17 Electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5066280A JPS56147437A (en) 1980-04-17 1980-04-17 Electron beam exposure method

Publications (2)

Publication Number Publication Date
JPS56147437A true JPS56147437A (en) 1981-11-16
JPS6232613B2 JPS6232613B2 (en) 1987-07-15

Family

ID=12865158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5066280A Granted JPS56147437A (en) 1980-04-17 1980-04-17 Electron beam exposure method

Country Status (1)

Country Link
JP (1) JPS56147437A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121625A (en) * 1981-12-28 1983-07-20 Fujitsu Ltd Electron-beam exposure device
JPS5961134A (en) * 1982-09-30 1984-04-07 Toshiba Corp Charged beam exposing device
JPS62172724A (en) * 1986-01-27 1987-07-29 Toshiba Corp Charged beam exposure method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121625A (en) * 1981-12-28 1983-07-20 Fujitsu Ltd Electron-beam exposure device
JPH047088B2 (en) * 1981-12-28 1992-02-07 Fujitsu Ltd
JPS5961134A (en) * 1982-09-30 1984-04-07 Toshiba Corp Charged beam exposing device
JPS62172724A (en) * 1986-01-27 1987-07-29 Toshiba Corp Charged beam exposure method

Also Published As

Publication number Publication date
JPS6232613B2 (en) 1987-07-15

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