JPS5760838A - Exposure for electron beam - Google Patents
Exposure for electron beamInfo
- Publication number
- JPS5760838A JPS5760838A JP13626180A JP13626180A JPS5760838A JP S5760838 A JPS5760838 A JP S5760838A JP 13626180 A JP13626180 A JP 13626180A JP 13626180 A JP13626180 A JP 13626180A JP S5760838 A JPS5760838 A JP S5760838A
- Authority
- JP
- Japan
- Prior art keywords
- mark
- stage
- resist film
- correction
- scan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To simplify a manufacturing process for photo-masks with high accuracy, by overexposing a resist film, making a mark, detecting the mark position with beam scan, and determining correction f mobile stage deflection. CONSTITUTION:A mask substrate 1 coated with a Cr-film 2 and painted with a resist film 3 is mounted on a stage 20. The stage 20 is moved by a certain amount and exposed with successive beam. Outside a pattern scan region of the resist film 3, a mark 5 of L-shaped concave is formed with overexposure prior to exposure. Coordinates of mark position are obtained for every movement of the stae 20 by detecting electron 31 reflected from scanning beam 30, and are compared with coordinates of the stage 20 position by means of laser measure 21. Correction given to a deflector 16 is calculated and determined with a computer. This makes the mark surface as high as the scan surface and enables highly accurate correction. Particularly, manufacture of photo-masks is simplified, because it is unnecessary to put the mark on the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13626180A JPS5760838A (en) | 1980-09-30 | 1980-09-30 | Exposure for electron beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13626180A JPS5760838A (en) | 1980-09-30 | 1980-09-30 | Exposure for electron beam |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5760838A true JPS5760838A (en) | 1982-04-13 |
Family
ID=15171043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13626180A Pending JPS5760838A (en) | 1980-09-30 | 1980-09-30 | Exposure for electron beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5760838A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210622A (en) * | 1982-06-01 | 1983-12-07 | Fujitsu Ltd | Electron beam exposing method |
JPH04132497U (en) * | 1991-05-29 | 1992-12-08 | 日本精工株式会社 | Water pump device for automobile engine |
-
1980
- 1980-09-30 JP JP13626180A patent/JPS5760838A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210622A (en) * | 1982-06-01 | 1983-12-07 | Fujitsu Ltd | Electron beam exposing method |
JPH0336297B2 (en) * | 1982-06-01 | 1991-05-31 | Fujitsu Ltd | |
JPH04132497U (en) * | 1991-05-29 | 1992-12-08 | 日本精工株式会社 | Water pump device for automobile engine |
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