JPS6232613B2 - - Google Patents
Info
- Publication number
- JPS6232613B2 JPS6232613B2 JP5066280A JP5066280A JPS6232613B2 JP S6232613 B2 JPS6232613 B2 JP S6232613B2 JP 5066280 A JP5066280 A JP 5066280A JP 5066280 A JP5066280 A JP 5066280A JP S6232613 B2 JPS6232613 B2 JP S6232613B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- reference point
- aperture
- deflection
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5066280A JPS56147437A (en) | 1980-04-17 | 1980-04-17 | Electron beam exposure method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5066280A JPS56147437A (en) | 1980-04-17 | 1980-04-17 | Electron beam exposure method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56147437A JPS56147437A (en) | 1981-11-16 |
JPS6232613B2 true JPS6232613B2 (enrdf_load_stackoverflow) | 1987-07-15 |
Family
ID=12865158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5066280A Granted JPS56147437A (en) | 1980-04-17 | 1980-04-17 | Electron beam exposure method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56147437A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58121625A (ja) * | 1981-12-28 | 1983-07-20 | Fujitsu Ltd | 電子ビ−ム露光装置 |
JPS5961134A (ja) * | 1982-09-30 | 1984-04-07 | Toshiba Corp | 荷電ビ−ム露光装置 |
JPS62172724A (ja) * | 1986-01-27 | 1987-07-29 | Toshiba Corp | 荷電ビ−ム露光方法 |
-
1980
- 1980-04-17 JP JP5066280A patent/JPS56147437A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS56147437A (en) | 1981-11-16 |
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