JPS6232612B2 - - Google Patents

Info

Publication number
JPS6232612B2
JPS6232612B2 JP2998380A JP2998380A JPS6232612B2 JP S6232612 B2 JPS6232612 B2 JP S6232612B2 JP 2998380 A JP2998380 A JP 2998380A JP 2998380 A JP2998380 A JP 2998380A JP S6232612 B2 JPS6232612 B2 JP S6232612B2
Authority
JP
Japan
Prior art keywords
mark
electron beam
ion beam
reference mark
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2998380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56125836A (en
Inventor
Masaki Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2998380A priority Critical patent/JPS56125836A/ja
Publication of JPS56125836A publication Critical patent/JPS56125836A/ja
Publication of JPS6232612B2 publication Critical patent/JPS6232612B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
JP2998380A 1980-03-10 1980-03-10 Method for electron beam exposure Granted JPS56125836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2998380A JPS56125836A (en) 1980-03-10 1980-03-10 Method for electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2998380A JPS56125836A (en) 1980-03-10 1980-03-10 Method for electron beam exposure

Publications (2)

Publication Number Publication Date
JPS56125836A JPS56125836A (en) 1981-10-02
JPS6232612B2 true JPS6232612B2 (enExample) 1987-07-15

Family

ID=12291188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2998380A Granted JPS56125836A (en) 1980-03-10 1980-03-10 Method for electron beam exposure

Country Status (1)

Country Link
JP (1) JPS56125836A (enExample)

Also Published As

Publication number Publication date
JPS56125836A (en) 1981-10-02

Similar Documents

Publication Publication Date Title
JPH0321901B2 (enExample)
KR100187865B1 (ko) X선 마스크 제조용 정합 및 정렬 기술
US4640888A (en) Alignment mark on a semiconductor and a method of forming the same
JPS6232612B2 (enExample)
US4808829A (en) Mark position detection system for use in charged particle beam apparatus
JPS6227728B2 (enExample)
JPH10253320A (ja) 位置ずれ量測定装置
JPS6210008B2 (enExample)
JPS6210011B2 (enExample)
JPS5885532A (ja) 電子ビ−ムによる位置決め方法
JPS6142409B2 (enExample)
JPS61207017A (ja) 電子ビ−ム露光方法
US6889162B1 (en) Wafer target design and method for determining centroid of wafer target
JPH0663729B2 (ja) 位置検出装置
JPS6210009B2 (enExample)
JP2903584B2 (ja) レジストレーション測定用マークの検出処理方法
JPH0449670B2 (enExample)
JPS60192332A (ja) 位置合わせマ−ク付き半導体基板及びこの基板のマ−ク位置検出方法
JPS63100725A (ja) 位置検出装置
JPH07120618B2 (ja) 粒子線描画方法
JPS63100719A (ja) 位置検出装置
JPS59145524A (ja) 半導体装置の製造方法
JPH0147892B2 (enExample)
JPH0571166B2 (enExample)
JPH01293518A (ja) 基板の高さ変化検出装置を有する露光装置