JPS6231493B2 - - Google Patents
Info
- Publication number
- JPS6231493B2 JPS6231493B2 JP53119212A JP11921278A JPS6231493B2 JP S6231493 B2 JPS6231493 B2 JP S6231493B2 JP 53119212 A JP53119212 A JP 53119212A JP 11921278 A JP11921278 A JP 11921278A JP S6231493 B2 JPS6231493 B2 JP S6231493B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- film
- substrate
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11921278A JPS5546521A (en) | 1978-09-29 | 1978-09-29 | Method of manufacturing semiconductor device |
US06/077,272 US4267011A (en) | 1978-09-29 | 1979-09-20 | Method for manufacturing a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11921278A JPS5546521A (en) | 1978-09-29 | 1978-09-29 | Method of manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5546521A JPS5546521A (en) | 1980-04-01 |
JPS6231493B2 true JPS6231493B2 (enrdf_load_html_response) | 1987-07-08 |
Family
ID=14755706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11921278A Granted JPS5546521A (en) | 1978-09-29 | 1978-09-29 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5546521A (enrdf_load_html_response) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643613B2 (enrdf_load_html_response) * | 1973-12-03 | 1981-10-14 | ||
JPS6022502B2 (ja) * | 1976-08-27 | 1985-06-03 | 富士通株式会社 | 半導体装置の製造方法 |
-
1978
- 1978-09-29 JP JP11921278A patent/JPS5546521A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5546521A (en) | 1980-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2510751B2 (ja) | 単一集積回路チップ上に高電圧及び低電圧cmosトランジスタを形成するためのプロセス | |
US4267011A (en) | Method for manufacturing a semiconductor device | |
US4149307A (en) | Process for fabricating insulated-gate field-effect transistors with self-aligned contacts | |
JPH0669149A (ja) | 半導体装置の製造方法 | |
JP3277533B2 (ja) | 半導体装置の製造方法 | |
US5023193A (en) | Method for simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks | |
US4560421A (en) | Semiconductor device and method of manufacturing the same | |
EP0274217A1 (en) | Method of producing a semiconductor device | |
JP4085891B2 (ja) | 半導体装置およびその製造方法 | |
JPS6360549B2 (enrdf_load_html_response) | ||
JP3185386B2 (ja) | 半導体装置の製造方法 | |
JPH0677155A (ja) | 半導体基板の熱処理方法 | |
JPS6380560A (ja) | 最小数のマスクを使用してバイポ−ラ及び相補型電界効果トランジスタを同時的に製造する方法 | |
JPS6231493B2 (enrdf_load_html_response) | ||
JPH0348664B2 (enrdf_load_html_response) | ||
JP2821628B2 (ja) | 半導体装置の製造方法 | |
JPS6138858B2 (enrdf_load_html_response) | ||
JPS6161268B2 (enrdf_load_html_response) | ||
JPS6152987B2 (enrdf_load_html_response) | ||
JPH06163576A (ja) | 半導体装置の製造方法 | |
JP2781989B2 (ja) | 半導体装置の製造方法 | |
JPH0595000A (ja) | 半導体装置の製造方法 | |
JPS6327858B2 (enrdf_load_html_response) | ||
JPS6152986B2 (enrdf_load_html_response) | ||
JPH02237024A (ja) | 半導体装置及びその製造方法 |