JPS6231491B2 - - Google Patents

Info

Publication number
JPS6231491B2
JPS6231491B2 JP3112478A JP3112478A JPS6231491B2 JP S6231491 B2 JPS6231491 B2 JP S6231491B2 JP 3112478 A JP3112478 A JP 3112478A JP 3112478 A JP3112478 A JP 3112478A JP S6231491 B2 JPS6231491 B2 JP S6231491B2
Authority
JP
Japan
Prior art keywords
electron beam
thickness
substrate
metal layer
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3112478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54124682A (en
Inventor
Nobuyuki Kishi
Akira Kaneki
Norihiko Tsukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP3112478A priority Critical patent/JPS54124682A/ja
Publication of JPS54124682A publication Critical patent/JPS54124682A/ja
Publication of JPS6231491B2 publication Critical patent/JPS6231491B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electron Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP3112478A 1978-03-20 1978-03-20 Method of fabricating electron beam mask Granted JPS54124682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3112478A JPS54124682A (en) 1978-03-20 1978-03-20 Method of fabricating electron beam mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3112478A JPS54124682A (en) 1978-03-20 1978-03-20 Method of fabricating electron beam mask

Publications (2)

Publication Number Publication Date
JPS54124682A JPS54124682A (en) 1979-09-27
JPS6231491B2 true JPS6231491B2 (pm) 1987-07-08

Family

ID=12322662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3112478A Granted JPS54124682A (en) 1978-03-20 1978-03-20 Method of fabricating electron beam mask

Country Status (1)

Country Link
JP (1) JPS54124682A (pm)

Also Published As

Publication number Publication date
JPS54124682A (en) 1979-09-27

Similar Documents

Publication Publication Date Title
US4211834A (en) Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US4018938A (en) Fabrication of high aspect ratio masks
JPS58119640A (ja) フオトレジスト・パタ−ンの形成方法
US5262257A (en) Mask for lithography
JP4613364B2 (ja) レジストパタン形成方法
JPH0142134B2 (pm)
CN102466980A (zh) 基于电子束光刻和x射线曝光制作多层膜闪耀光栅的方法
KR100432794B1 (ko) 배선 패턴을 형성하는 공정
JP3934723B2 (ja) メタルマスクの製造方法
TWI237159B (en) Photo-mask, manufacturing method thereof and method for manufacturing a semiconductor device using the same
KR100907898B1 (ko) 반도체 소자 제조 방법
JPH11323592A (ja) 電鋳金属体およびその製造方法
JPS6231491B2 (pm)
JPH06148861A (ja) フォトマスク及びその製造方法
JPS6156317B2 (pm)
JP3267471B2 (ja) マスク、これを用いた露光装置やデバイス生産方法
KR100318545B1 (ko) 액정소자의 백 라이트 유닛 금형 제조방법
TWI285300B (en) A method for making a light guide plate mold
KR100249317B1 (ko) 미세 구조물 형성을 위한 리가 공정
JPS6249094B2 (pm)
JP2001013056A (ja) 微小開口形成方法
JPH09211842A (ja) 光学的手段を用いた電子回路形成における光反射防止方法及びその装置とその製品
JP3191383B2 (ja) 印刷版の製造方法
JPH06333804A (ja) Ｘ線露光方法及びｘ線マスク製造方法
JP2008227337A (ja) 近接場露光方法