JPS6231149A - Semiconductor intergrated circuit device - Google Patents

Abstract

PURPOSE:To dissipate the heat generated in a polysilicon resistance to the outside of an IC by arranging the wiring layer one end of which is connected to the polysilicon resistance through a contact hole and another end of which is not connected electrically, but is exposed on the surface of the IC. CONSTITUTION:Electrodes 3 are arranged on both ends of a polysilicon resistance 2 placed on an Si substrate 1. A contact hole is formed on an insulating film 6 between the electrodes 3. One end of a wiring layer 5 is connected to the resistance 2 through the contact hole 4 and another end is not connected electrically, but is exposed on the surface of the IC. Accordingly, the heat generated in the resistance 2 is dissipated to the outside of the IC.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor integrated circuit device, and particularly to the heat dissipation properties of a polycrystalline silicon resistor formed on a semiconductor integrated circuit device (hereinafter abbreviated as IC). Regarding excellent IC.

[Conventional technology]

Conventionally, when heat dissipation is not sufficient in an IC that consumes a large amount of power, methods have been taken to improve heat dissipation by arranging elements on the IC. It was dispersed on top.

[Problem that the invention seeks to solve]

Among the resistors formed on conventional ICs, especially in the case of polycrystalline silicon resistors, each polycrystalline silicon resistor is
Even if the polycrystalline silicon is disposed so as to be dispersed on C, efficient heat dissipation cannot be achieved because the polycrystalline silicon is surrounded by an insulating film having poor thermal conductivity.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor integrated circuit device which eliminates the above-mentioned conventional drawbacks and improves heat dissipation of a polycrystalline silicon resistor formed on the semiconductor integrated circuit device.

[Means for solving problems]

The semiconductor integrated circuit device of the present invention includes a polycrystalline silicon resistor formed on the semiconductor integrated circuit device, an insulating film formed on the polycrystalline silicon, and a polycrystalline silicon resistor between both end electrodes of the polycrystalline silicon resistor. It is constructed by having a contact hole provided in an insulating film on the resistor, and a wiring layer connected to the polycrystalline silicon resistor through the contact hole and electrically independent from other regions.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a plan view of a polycrystalline silicon resistor formed on an IC according to a first embodiment of the present invention, and FIG.
-A' line sectional view.

As shown in FIGS. 1 and 2, there are electrodes 3 at both ends of a polycrystalline silicon resistor 2 arranged on a Si substrate 1, a contact hole 4 is formed on the polycrystalline silicon between the electrodes, and a wiring layer is formed. 5 is connected to the polycrystalline silicon through the contact hole 3, and the others are not electrically connected (exposed on the IC surface. In the sectional view taken along the line A-A', the polycrystalline silicon resistor is
It is in contact with the wiring layer and the insulating film 6.

FIG. 3 shows a second embodiment of the present invention, in which the size of the wiring layer exposed on the IC surface of the first embodiment is made smaller than the size of the polycrystalline silicon resistor.

FIG. 4 shows a third embodiment of the present invention, in which two pairs of the contacts of the first embodiment and a wiring layer exposed on the IC surface are provided between both end electrodes of a polycrystalline silicon resistor.

[Effects of the Invention] As explained above, the present invention provides a method in which a contact is placed on the polycrystalline silicon between both end electrodes of a polycrystalline silicon resistor formed on an IC, one end is connected to the polycrystalline silicon by the contact, On the other hand, by arranging a wiring layer that is not electrically connected and exposed on the IC surface, it is effective to dissipate the heat generated by the polycrystalline silicon resistor to the outside of the IC.

[Brief explanation of drawings]

FIG. 1 is a plan view of the first embodiment of the present invention, and FIG. 2 is a plan view of the first embodiment of the present invention.
The sectional view taken along the line A-A'' in the figure, FIGS. 3 and 4 are plan views of the second and third embodiments of the present invention, respectively. 1...Si substrate, 2...Polycrystalline silicon resistance, 3.
・Polycrystalline silicon resistor electrode, 4...Contact I・
Hole, 5... Wiring layer exposed on the IC surface, 6... Insulating film. Hemorrhoids/Enja 2 times

Claims (1)

[Claims] A polycrystalline silicon resistor formed on a semiconductor integrated circuit device, an insulating film formed on the polycrystalline silicon resistor, and an insulating film on the polycrystalline silicon resistor between both end electrodes of the polycrystalline silicon resistor. 1. A semiconductor integrated circuit device comprising: a contact hole; and a wiring layer connected to a polycrystalline silicon resistor through the contact hole and electrically independent from other regions.