JPS61124162A - Semiconductor device - Google Patents

Abstract

PURPOSE:To dissipate heat from upper surface by connecting one electrode wiring metal of a resistor coated with an insulating film with wiring metal having high area space factor, and coating the wiring metal through an insulating film widely on the resistor. CONSTITUTION:A resistor 1 is obtained by a polycrystalline silicon of layer resistor 200OMEGA/square, and thermally oxidized at the bottom at a silicon substrate 6, coated with a silicon dioxide film 5 of 1.6mum thick, and coated at the upper and side surfaces with vapor phase grown silicon dioxide film 2 of 0.3mum thick. Electrode wirings 3 are connected with one end of the resistor 1, extended to one side to form an electric circuit, the resistor 1 is simultaneously coated widely, electrode wirings are connected with power source wirings or ground wiring having large area space factor in a semiconductor integrated circuit device. Since both upper and lower surfaces are heat sink structure, local high temperature rise in one device can be replaced by the entire low temperature rise in the device. Thus, long lifetime of the wiring life inversely proportional to the temperature in the device can be performed.

Description

DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a semiconductor integrated circuit device, and particularly to heat dissipation from a resistor.

(Prior art) Conventionally, in semiconductor integrated circuit devices, polycrystalline silicon (polysilicon), which is surrounded on all sides by an insulating film such as silicon dioxide, has been used as a resistor with low parasitic capacitance for the purpose of increasing speed.
is used. However, since the insulating film surrounding the polycrystalline silicon is an insulator, it has a low thermal conductivity, and therefore prevents the dissipation of heat generated by passing a current through the resistor. Furthermore, this heat dissipation is also limited by the unique structure of resistors used in semiconductor integrated circuits.

In other words, the resistor is generally flat,
Considering its surface area, most of the heat must be dissipated from the top and bottom surfaces of the plate. However, heat is dissipated only from the insulating film on the bottom side (this insulating film is in contact with the silicon substrate, which has a high thermal conductivity), and the heat is radiated only from the insulating film on the top side (this insulating film has a very low thermal conductivity). The structure is such that almost no heat is dissipated from the air (in contact with gases such as air).

(Object of the Invention) An object of the present invention is to provide a structure of a semiconductor integrated circuit device that can dissipate heat not only from the bottom surface of a polycrystalline resistor but also from the top surface.

(Structure of the Invention) The present invention provides that one electrode wiring metal of a resistor covered with an insulating film is a metal wiring (for example, a power supply wiring) that occupies a high area in a semiconductor integrated circuit device using the resistor. The resistor is connected to the resistor, and its wiring metal widely covers the resistor through an insulating film.

(Action of the invention) According to the invention, the upper surface of the resistor is covered with wiring metal. In general, metal has a high thermal conductivity, and since the metal wiring is connected to a metal wiring that occupies a large area within a semiconductor integrated circuit device, it also has a large heat capacity. Therefore, in addition to conventional heat radiation from the bottom surface of the resistor, heat radiation from the top surface of the resistor is also possible.

(Effects of the Invention) Since the polycrystalline silicon resistor has a structure that allows heat to be dissipated from both the upper and lower surfaces, the temperature rise in the resistor due to power supply can be suppressed to a low level. In other words, a locally high temperature rise within one semiconductor integrated circuit device can be replaced with a low temperature rise throughout the entire area within the device. As a result, it becomes possible to extend the life of the wiring, which is inversely proportional to the temperature inside the device.

(Example) Examples of the present invention will be described below with reference to the drawings. The resistor 1 is made of polycrystalline silicon with a layer resistance of 200 Ω/hole. The bottom surface of this resistor has a thickness of 1 mm obtained by thermally oxidizing the silicon substrate 6.
．． The top and side surfaces of the paper antibody were deposited on a 6 μm thick silicon dioxide film 5, and a 0.3 μm thick vapor grown silicon dioxide film 2 was deposited on the paper antibody.

The electrode wiring 3 is connected to one end of the resistor 1 and extends to one side (right side in the drawing) to form an electrical circuit, and at the same time widely covers the resistor 1 as shown in the figure. is connected to the power supply wiring or ground wiring which occupies a large area within the semiconductor integrated circuit device, and is made of aluminum.

The electrode wiring 4 is connected to the other end of the resistor 1 and extends to the other side (left side in the drawing).

The thermal conductivity of silicon is 1.5W/ (cm - de g
), the thermal conductivity of aluminum is 2.38W/(cm-d
eg), the thermal conductivity of air is 2.6X10'W/(Cm
-dr+g), it can be seen that the presence of the electrode wiring metal 3 made of aluminum greatly contributes to the heat dissipation of the heat generated by the resistor. These thermal conductivities and the thermal resistance of silicon dioxide 1.02W/ (cm-d e g
), the resistance width is 10 μm, and the current value flowing through one resistor is 5 mA, and the temperature rise of the resistor depending on the presence or absence of the electrode wiring metal 3 is calculated to be 80'e and 12.5°C, respectively. Contribution can be confirmed.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of an embodiment of the invention. 1...Resistor (polycrystalline silicon), 2...
Insulator (vapor-phase growth silicon dioxide), 3... Electrode wiring metal (aluminum) connected to wiring metal that occupies a large area in a semiconductor integrated circuit device, 4...
... Electrode wiring metal (aluminum), 5 ... Insulator (thermal oxidized silicon dioxide), 6 ... Semiconductor substrate (silicon). Figure l

Claims (1)

[Claims] A semiconductor integrated circuit characterized in that at least one electrode wiring metal connected to a resistor covered with an insulating film extends over the resistor through the insulating film so as to broadly cover the resistor. Device.