JPS623099A - 炭化ケイ素ウイスカ−の連続製造装置 - Google Patents

炭化ケイ素ウイスカ−の連続製造装置

Info

Publication number
JPS623099A
JPS623099A JP60140026A JP14002685A JPS623099A JP S623099 A JPS623099 A JP S623099A JP 60140026 A JP60140026 A JP 60140026A JP 14002685 A JP14002685 A JP 14002685A JP S623099 A JPS623099 A JP S623099A
Authority
JP
Japan
Prior art keywords
zone
silicon carbide
raw material
reaction
carbide whiskers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60140026A
Other languages
English (en)
Japanese (ja)
Other versions
JPH042560B2 (enrdf_load_stackoverflow
Inventor
Yoshiro Kaji
梶 吉郎
Masakazu Yamamoto
正和 山本
Katsunori Shimazaki
嶋崎 勝乗
Keita Yura
由良 慶太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanebo Ltd
Kobe Steel Ltd
Original Assignee
Kanebo Ltd
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanebo Ltd, Kobe Steel Ltd filed Critical Kanebo Ltd
Priority to JP60140026A priority Critical patent/JPS623099A/ja
Publication of JPS623099A publication Critical patent/JPS623099A/ja
Publication of JPH042560B2 publication Critical patent/JPH042560B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60140026A 1985-06-25 1985-06-25 炭化ケイ素ウイスカ−の連続製造装置 Granted JPS623099A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60140026A JPS623099A (ja) 1985-06-25 1985-06-25 炭化ケイ素ウイスカ−の連続製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60140026A JPS623099A (ja) 1985-06-25 1985-06-25 炭化ケイ素ウイスカ−の連続製造装置

Publications (2)

Publication Number Publication Date
JPS623099A true JPS623099A (ja) 1987-01-09
JPH042560B2 JPH042560B2 (enrdf_load_stackoverflow) 1992-01-20

Family

ID=15259221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60140026A Granted JPS623099A (ja) 1985-06-25 1985-06-25 炭化ケイ素ウイスカ−の連続製造装置

Country Status (1)

Country Link
JP (1) JPS623099A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63291900A (ja) * 1987-05-25 1988-11-29 Tokai Carbon Co Ltd 炭化けい素ウィスカ−の製造方法
US5265118A (en) * 1991-03-22 1993-11-23 Tokai Carbon Co., Ltd. Silicon carbide whisker production apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63291900A (ja) * 1987-05-25 1988-11-29 Tokai Carbon Co Ltd 炭化けい素ウィスカ−の製造方法
US5265118A (en) * 1991-03-22 1993-11-23 Tokai Carbon Co., Ltd. Silicon carbide whisker production apparatus

Also Published As

Publication number Publication date
JPH042560B2 (enrdf_load_stackoverflow) 1992-01-20

Similar Documents

Publication Publication Date Title
US4356029A (en) Titanium product collection in a plasma reactor
JP2001516321A (ja) 金属ハロゲン化物材料からのハロゲン化生物の製造法
CN1974383B (zh) 高纯度多结晶硅的制造方法及制造装置
JPS6236966B2 (enrdf_load_stackoverflow)
JPS623099A (ja) 炭化ケイ素ウイスカ−の連続製造装置
KR20060124611A (ko) 기상으로부터 초미립자를 퇴적시키는 장치 및 방법
JP3722736B2 (ja) 低級酸化ケイ素粉末の製造方法
JPS623098A (ja) 炭化ケイ素ウイスカ−の製造方法
JPS61291410A (ja) ケイ素の製造方法
JPS5939708A (ja) 炭化けい素微粉末の製造方法
JPS623100A (ja) 炭化ケイ素ウイスカ−の連続製造方法
JPH101728A (ja) 酸化錫の還元処理方法及び装置
JPS63159298A (ja) 炭化ケイ素ウイスカーの連続製造装置
RU2119455C1 (ru) Способ получения хромата щелочного металла
JPS5891018A (ja) 窒化物微粉末の製造方法
TWI486307B (zh) 用於製造矽烷之方法及系統
KR940000105B1 (ko) 일산화규소 미분말의 제조 방법 및 장치
JPH01188413A (ja) 半導体シリコン製造用黒鉛材料の精製方法
JPH0680412A (ja) 多結晶シリコンの製造方法
JPH0231305B2 (ja) Koonrenzokuhannoro
PL79418B1 (enrdf_load_stackoverflow)
JPH0543208A (ja) 繊維状ケイ素化合物の連続式製造方法
JPS6250466A (ja) 窒化珪素膜を有する物品の製造法
WO2009065444A1 (en) A method of producing polycrystalline and single crystal silicon
KR101151272B1 (ko) 고순도 다결정 실리콘 제조장치