JPS6229396B2 - - Google Patents
Info
- Publication number
- JPS6229396B2 JPS6229396B2 JP54136771A JP13677179A JPS6229396B2 JP S6229396 B2 JPS6229396 B2 JP S6229396B2 JP 54136771 A JP54136771 A JP 54136771A JP 13677179 A JP13677179 A JP 13677179A JP S6229396 B2 JPS6229396 B2 JP S6229396B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- growth chamber
- solution
- container
- semiconductor substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 8
- 239000007791 liquid phase Substances 0.000 claims description 5
- 239000000243 solution Substances 0.000 description 22
- 239000007788 liquid Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13677179A JPS5659696A (en) | 1979-10-23 | 1979-10-23 | Liquid phase epitaxial growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13677179A JPS5659696A (en) | 1979-10-23 | 1979-10-23 | Liquid phase epitaxial growing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5659696A JPS5659696A (en) | 1981-05-23 |
| JPS6229396B2 true JPS6229396B2 (de) | 1987-06-25 |
Family
ID=15183122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13677179A Granted JPS5659696A (en) | 1979-10-23 | 1979-10-23 | Liquid phase epitaxial growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5659696A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0543032Y2 (de) * | 1987-10-13 | 1993-10-28 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04367587A (ja) * | 1991-06-14 | 1992-12-18 | Shin Etsu Handotai Co Ltd | 液相成長方法及び装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49123500A (de) * | 1973-04-02 | 1974-11-26 | ||
| JPS5147153A (ja) * | 1974-02-01 | 1976-04-22 | Joruju Ruboshii Konsutorukuchu | Maruamiki |
| JPS531036A (en) * | 1976-06-25 | 1978-01-07 | Toray Industries | Light polarizer |
| JPS5344311A (en) * | 1973-07-05 | 1978-04-21 | Masahiro Hiyamuta | Stripper for reaper |
-
1979
- 1979-10-23 JP JP13677179A patent/JPS5659696A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49123500A (de) * | 1973-04-02 | 1974-11-26 | ||
| JPS5344311A (en) * | 1973-07-05 | 1978-04-21 | Masahiro Hiyamuta | Stripper for reaper |
| JPS5147153A (ja) * | 1974-02-01 | 1976-04-22 | Joruju Ruboshii Konsutorukuchu | Maruamiki |
| JPS531036A (en) * | 1976-06-25 | 1978-01-07 | Toray Industries | Light polarizer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0543032Y2 (de) * | 1987-10-13 | 1993-10-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5659696A (en) | 1981-05-23 |
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