JPS6229032A - 高安定フイ−ルドエミツタ−の製造方法 - Google Patents

高安定フイ−ルドエミツタ−の製造方法

Info

Publication number
JPS6229032A
JPS6229032A JP60168727A JP16872785A JPS6229032A JP S6229032 A JPS6229032 A JP S6229032A JP 60168727 A JP60168727 A JP 60168727A JP 16872785 A JP16872785 A JP 16872785A JP S6229032 A JPS6229032 A JP S6229032A
Authority
JP
Japan
Prior art keywords
emitter
field emitter
surface treatment
treatment
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60168727A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0533487B2 (enrdf_load_stackoverflow
Inventor
Yoshio Ishizawa
石沢 芳夫
Chuhei Oshima
忠平 大島
Shigeki Otani
茂樹 大谷
Susumu Aoki
進 青木
Yukio Shibata
柴田 幸男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP60168727A priority Critical patent/JPS6229032A/ja
Publication of JPS6229032A publication Critical patent/JPS6229032A/ja
Publication of JPH0533487B2 publication Critical patent/JPH0533487B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Carbon And Carbon Compounds (AREA)
  • Cold Cathode And The Manufacture (AREA)
JP60168727A 1985-07-31 1985-07-31 高安定フイ−ルドエミツタ−の製造方法 Granted JPS6229032A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60168727A JPS6229032A (ja) 1985-07-31 1985-07-31 高安定フイ−ルドエミツタ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60168727A JPS6229032A (ja) 1985-07-31 1985-07-31 高安定フイ−ルドエミツタ−の製造方法

Publications (2)

Publication Number Publication Date
JPS6229032A true JPS6229032A (ja) 1987-02-07
JPH0533487B2 JPH0533487B2 (enrdf_load_stackoverflow) 1993-05-19

Family

ID=15873302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60168727A Granted JPS6229032A (ja) 1985-07-31 1985-07-31 高安定フイ−ルドエミツタ−の製造方法

Country Status (1)

Country Link
JP (1) JPS6229032A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009300070A (ja) * 2008-06-11 2009-12-24 Kingtec Korea Co Ltd ジャケット型個人冷房装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009300070A (ja) * 2008-06-11 2009-12-24 Kingtec Korea Co Ltd ジャケット型個人冷房装置

Also Published As

Publication number Publication date
JPH0533487B2 (enrdf_load_stackoverflow) 1993-05-19

Similar Documents

Publication Publication Date Title
US7829377B2 (en) Diamond medical devices
JPH02504444A (ja) 集中イオンビームを使用する金属化学蒸着用の選択エリア核および成長方法
US20090214169A1 (en) Structures formed in diamond
EP1842227A2 (en) Diamond medical devices
JPS6229032A (ja) 高安定フイ−ルドエミツタ−の製造方法
JPH06115915A (ja) 新炭素材料の製造方法
JPS6280938A (ja) チタン化合物フイ−ルドエミツタ−の製造方法
JPS5982732A (ja) 半導体装置の製造方法
JPS62222633A (ja) 半導体素子の製造方法
JP3438038B2 (ja) 電子放出陰極およびその製造方法
JPS61190830A (ja) チタンオキシカーバイドエミッターの製造方法
JPS6280937A (ja) 高性能フイ−ルドエミツタ−の製造方法
JPH0461724A (ja) 炭化ニオブフィールドエミッターの作製方法
JPS6280936A (ja) フイ−ルドエミツタ−の製造方法
DE69704539T2 (de) Verfahren zur Behandlung der Oberfläche eines Silizium-Einkristalles und Verfahren zur Herstellung einer Dünnschicht aus monokristallinem Silizium
JPS58209844A (ja) 電界電離型イオン源
JPS61153918A (ja) 高安定電子放射特性を示すフイ−ルドエミツタ−の製造方法
JPS6091528A (ja) 遷移金属化合物からなるフイ−ルド・エミツタ−
JP2562921B2 (ja) 気相法ダイヤモンドの合成方法
JPS59148230A (ja) イオン源用チツプの製造方法
KR19990051970A (ko) 실리콘 발광소자의 적외선 발광층 형성방법
JPH0590155A (ja) 単結晶薄膜の製造装置及び製造方法
SU763841A1 (ru) Способ получени бессеребр ных изображений
JPH0418408B2 (enrdf_load_stackoverflow)
EP4367300A1 (de) Verfahren zur herstellung eines optisch adressierbaren farbzentrums

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term