JPS6228593B2 - - Google Patents

Info

Publication number
JPS6228593B2
JPS6228593B2 JP54101454A JP10145479A JPS6228593B2 JP S6228593 B2 JPS6228593 B2 JP S6228593B2 JP 54101454 A JP54101454 A JP 54101454A JP 10145479 A JP10145479 A JP 10145479A JP S6228593 B2 JPS6228593 B2 JP S6228593B2
Authority
JP
Japan
Prior art keywords
impurity concentration
electrode
gate
gaas
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54101454A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5624979A (en
Inventor
Hideaki Kozu
Akira Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10145479A priority Critical patent/JPS5624979A/ja
Publication of JPS5624979A publication Critical patent/JPS5624979A/ja
Publication of JPS6228593B2 publication Critical patent/JPS6228593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP10145479A 1979-08-08 1979-08-08 Field effect transistor Granted JPS5624979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10145479A JPS5624979A (en) 1979-08-08 1979-08-08 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10145479A JPS5624979A (en) 1979-08-08 1979-08-08 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS5624979A JPS5624979A (en) 1981-03-10
JPS6228593B2 true JPS6228593B2 (enrdf_load_stackoverflow) 1987-06-22

Family

ID=14301132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10145479A Granted JPS5624979A (en) 1979-08-08 1979-08-08 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5624979A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494016A (en) * 1982-07-26 1985-01-15 Sperry Corporation High performance MESFET transistor for VLSI implementation
JPS6085567A (ja) * 1983-10-17 1985-05-15 Mitsubishi Electric Corp 電界効果トランジスタ
JPH0812867B2 (ja) * 1984-05-23 1996-02-07 日本電気株式会社 半導体装置
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268379A (en) * 1975-12-04 1977-06-07 Fujitsu Ltd Semiconductor device
JPS5348488A (en) * 1976-10-14 1978-05-01 Mitsubishi Electric Corp Field effect transistor

Also Published As

Publication number Publication date
JPS5624979A (en) 1981-03-10

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