JPS62283431A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPS62283431A JPS62283431A JP61124718A JP12471886A JPS62283431A JP S62283431 A JPS62283431 A JP S62283431A JP 61124718 A JP61124718 A JP 61124718A JP 12471886 A JP12471886 A JP 12471886A JP S62283431 A JPS62283431 A JP S62283431A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording
- recording medium
- optical recording
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052738 indium Inorganic materials 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 46
- 239000010409 thin film Substances 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 239000006023 eutectic alloy Substances 0.000 abstract description 8
- 230000001681 protective effect Effects 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910005900 GeTe Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 101150009089 tifa gene Proteins 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、光ビームの照射等により記録膜が可逆的に相
転移することを利用して情報の記録、消去を行なうこと
ができる相変化型の光記録媒体に関するものである。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention records and erases information by utilizing reversible phase transition of a recording film by irradiation with a light beam, etc. The present invention relates to a phase change type optical recording medium that can be used.
（従来の技術）
相変化型の光記録媒体において、情報の記録は、例えば
記録Ｍ報で変調された光ビームを記録膜に照射して急速
加熱、急速冷部することにより、光ビーム照射部分の記
録膜が例えば結晶から非晶質へと相転移することでなさ
れる。また、記録の消去は、記録がされた非晶質部分に
消去用の光ビームを照射して加熱した後、徐冷すること
により、再び結晶へ戻すことでなされる。ざらに、情報
の再生は再生用の光ビームを照射して、情報が記録され
た非晶質部分と記録されていない結晶部分との反射率の
違いを読み取ることでなされる。(Prior art) In a phase change type optical recording medium, information is recorded by, for example, irradiating a recording film with a light beam modulated by a recording M signal to rapidly heat and cool the part irradiated with the light beam. This is achieved by phase transition of the recording film from, for example, crystal to amorphous. Further, erasing of a record is performed by irradiating the recorded amorphous portion with an erasing light beam to heat it, and then gradually cooling it to return it to a crystalline state. Roughly speaking, information is reproduced by irradiating a reproduction light beam and reading the difference in reflectance between the amorphous portion where information is recorded and the crystalline portion where information is not recorded.
ところで従来より相変化型の記録媒体としては、Ｔｅ
、Ｓｅ等のカルコゲナイド系半導体を基板上に積層して
記録膜としたものが知られている。By the way, as a conventional phase change type recording medium, Te
It is known that chalcogenide semiconductors such as , Se, etc. are laminated on a substrate to form a recording film.
しかしながら、例えば、Ｔｅ単体は結晶化温度が室温付
近（１０℃前１艷）に存在するので、記録情報が含まれ
る光ビームを照射し、Ｔｅ単体１ＩＩｕを結晶質から非
晶質へ相変化させて記録を行っても、経時変化により非
晶質部分が結晶質状態に戻り、記録が自然消去されるお
それがある。However, for example, since the crystallization temperature of simple Te is near room temperature (1 degree before 10°C), a light beam containing recorded information is irradiated to change the phase of simple Te 1IIu from crystalline to amorphous. Even if recording is performed, the amorphous portion may return to a crystalline state due to changes over time, and the recording may be erased naturally.
これを解決するために、ＴｅにＧｅを添加して結晶化温
度を空温以上にし、非晶質を安定させる等の試みがなさ
れている。特に、Ｔｅ Ｇｅは、Ｔｅ ＋−ｘＧｅｘ
、Ｏ＜Ｘ≦０．５の組成範囲で、共晶組成となり、非晶
質形成能が高いため、１ｅＱｅｅ晶合金薄摸が相変化型
光記録媒体として注目されている。To solve this problem, attempts have been made to stabilize the amorphous state by adding Ge to Te to raise the crystallization temperature to above air temperature. In particular, Te Ge is Te+−xGex
, O<X≦0.5, it becomes a eutectic composition and has a high ability to form an amorphous state, so the 1eQee crystal alloy thin film is attracting attention as a phase change optical recording medium.
しかしながら、Ｔｅ Ｇｅ共共合合金′ａ膜にすると化
学的安定性に乏しく、大気中で次第に腐蝕して劣化する
ので、記録の安定がない。However, the TeGe co-conjugated alloy 'a film has poor chemical stability and gradually corrodes and deteriorates in the atmosphere, resulting in poor recording stability.
（発明が解決しようとする問題点）
上述のように従来の光記録媒体にあっては、耐食性が悪
く、安定した記録状態を維持できないという問題があっ
た。(Problems to be Solved by the Invention) As described above, conventional optical recording media have a problem in that they have poor corrosion resistance and cannot maintain a stable recording state.
本発明は上記の問題点に基づいてなされたものであり、
その目的は長期間にわたって記録が消去することなく安
定した記録状態を維持することができる光記録媒体を提
供することにある。The present invention has been made based on the above problems,
The purpose is to provide an optical recording medium that can maintain a stable recording state over a long period of time without erasing the recording.
［発明の構成コ
（問題点を解決するための手段及び作用）上記問題点を
解決するために本発明は、基板上に積層される記録膜を
Ｔｅ 、Ｑｅ及び［ｎを主成分とする混合物薄膜で形成
するようにした。[Structure of the Invention (Means and Effects for Solving the Problems)] In order to solve the above problems, the present invention provides a recording film laminated on a substrate using a mixture containing Te, Qe and [n as main components]. It is made of a thin film.
Ｔｅ Ｇｅ共共合合金少量のｉｎを添加すると、ＴｅＧ
ｅＩｎ３元系からなる安定な化合物が形成される。非晶
質ＴｅＧｅ共晶合金を示差走査熱量計（ＤＳＣ）にて熱
分析すると、昇温過程でＴｅ及びＧｅ Ｔｅそれぞれに
対応した２つの結晶化の発熱ピークが見られる。これに
対して、ＴｅＧｅ共晶合金に少量のＩｎを添加した非晶
質Ｔｅ ＧｅＩｎ３元系合金では、昇温過程で１つの結
晶化の発熱ピークしか見られない。これは、非晶質Ｔｅ
Ｇｅ１ｎ３元系合金はＩｎを少？添加したために、１つ
の化合物を形成して結晶化しているものである。Adding a small amount of in to TeGe co-conjugate alloy results in TeG
A stable compound consisting of an eIn ternary system is formed. When an amorphous TeGe eutectic alloy is thermally analyzed using a differential scanning calorimeter (DSC), two exothermic peaks of crystallization corresponding to Te and GeTe are observed during the temperature rising process. On the other hand, in an amorphous TeGeIn ternary alloy in which a small amount of In is added to a TeGe eutectic alloy, only one exothermic peak of crystallization is observed during the temperature rising process. This is amorphous Te
Does Ge1n ternary alloy contain less In? Because of the addition, one compound is formed and crystallized.
よって、ＴｅＧｅ共晶合金に少量のＩｎを添加した混合
物薄膜で形成される記録膜は、膜の経年劣化が極めて少
なく、安定した記録状態が維持される。Therefore, a recording film formed from a thin film of a mixture of a TeGe eutectic alloy and a small amount of In added has extremely little deterioration over time and maintains a stable recording state.
（実施例）
第１図は本発明に係る光記録媒体の一実施例の断面を示
しており、図示する光記録媒体１は、基板３．第１の保
護膜５．記録膜７．第２の保護膜９及び紫外線硬化樹脂
（ＵＶ）膜１１をこの順番で積層して円板状に形成した
ものである。(Embodiment) FIG. 1 shows a cross section of an embodiment of an optical recording medium according to the present invention, and the illustrated optical recording medium 1 includes a substrate 3. First protective film5. Recording film 7. The second protective film 9 and the ultraviolet curing resin (UV) film 11 are laminated in this order to form a disk shape.
基板３は、アクリルやポリカーボネートやエポキシ等の
樹脂またはガラスにより形成された透明基板である。The substrate 3 is a transparent substrate made of resin such as acrylic, polycarbonate, or epoxy, or glass.
第１．第２（７）［を膜５，９はＳｉ ＯやＳｉＯ２の
Ｊりさで形成したちのである。これら保護ＦＪ５゜９に
より、記録ｌｌ１７の酸化や記録時における記録膜７の
蒸発による穴の形成が防止される。1st. The second (7) films 5 and 9 are made of SiO or SiO2. These protective FJ5.9 prevent the formation of holes due to oxidation of the recording layer 17 and evaporation of the recording film 7 during recording.
また、上記ＵＶ膜１１は、第２の記録膜９上にＵＶ樹脂
を塗布して紫外線で硬化したもので、このＵｖ膜１１に
より光記録媒体１の使用時におけるひび割れ等のｄ械的
損傷が防止される。Further, the UV film 11 is made by applying UV resin on the second recording film 9 and curing it with ultraviolet rays, and this UV film 11 prevents mechanical damage such as cracks when the optical recording medium 1 is used. Prevented.
記録膜７は、Ｔｅ、Ｇｅ、Ｉｎを主成分とする混合物薄
膜であり、スパッタ法または蒸着法にて第１の保護膜５
上に５０〜５ｏｏｏＸの厚さで成膜される。The recording film 7 is a mixture thin film containing Te, Ge, and In as main components, and is coated with the first protective film 5 by sputtering or vapor deposition.
A film is formed thereon to a thickness of 50 to 500X.
この混合物ａ膜は、次の一般式で示される。This mixture a film is represented by the following general formula.
（Ｔｅ ｌ−ｘ Ｇｅｘ ） ＋−ｙ Ｉ
ｎｙただし、Ｑ＜ｘ≦０．５．Ｏ＜ｙ≦０．５の範囲
が好適である。 以下具体的な実施例について説明ｊる
。(Te l-x Gex) +-y I
ny However, Q<x≦0.5. A range of O<y≦0.5 is suitable. Specific examples will be described below.
（実施例−１）
Ｓｉ Ｏ２ターゲットを使用してスパッタ法によりアク
リル基板上に厚ざ１０００Ａの５１０２膜を形成し第１
の保護膜５とした。(Example-1) A 5102 film with a thickness of 1000 A was formed on an acrylic substrate by sputtering using a SiO2 target.
The protective film 5 was made as follows.
次に、Ｔｅターゲット、Ｇｅターゲット及び］ｎタｎタ
ーゲラ使用して３元同時スパッタ法により各ターゲット
に投入するパワーを調整することによって、Ｔｅａ ＋
Ｇｅｔ ５ Ｉｎ４ （ａｔ％）から成る記録膜７と
厚さ１０００Ａで第１の保護膜５上に形成した。Next, by adjusting the power input to each target using a three-dimensional simultaneous sputtering method using a Te target, a Ge target, and a ]n target, Tea +
A recording film 7 made of Get 5 In4 (at%) and a thickness of 1000 Å was formed on the first protective film 5.
次いで、記録膜７上に第１の保護膜５と同様の方法で厚
さ１０００Ａの５ｉ（ｈ膜を形成して第２の保ｒＪｍ９
とした。さらに、この第２の保護膜９上にＵＶ樹脂を塗
布し、紫外線を照射して硬化させてＵｖ模１１を形成し
た。Next, a 5i(h film with a thickness of 1000 A is formed on the recording film 7 in the same manner as the first protective film 5, and a second protective film 7 is formed on the recording film 7.
And so. Further, a UV resin was applied onto the second protective film 9 and cured by irradiation with ultraviolet rays to form a UV pattern 11.
上述のように形成された記録ｇ！７は成膜時には非晶質
のため、５ＩＩＩＷのレーザビームを連続照射し徐冷し
て結晶化した。次いで、記録情報を含む出力９ｍＷ、パ
ルス幅４００ｎｓのレーザビーム１５を照射し、急速冷
却して記録膜７を非晶質化し記録ビット部１３を形成し
て情報の記録をした。The record g! formed as described above. Since No. 7 was amorphous at the time of film formation, it was crystallized by continuous irradiation with a 5IIIW laser beam and slow cooling. Next, a laser beam 15 containing recording information with an output of 9 mW and a pulse width of 400 ns was irradiated, and the recording film 7 was rapidly cooled to become amorphous to form a recording bit portion 13 to record information.
また、出力的３１１１Ｗの連続のレーザビームを非晶質
の記録ビット部１３に照射し記録膜７の結晶化温度以上
に加熱して徐冷することにより容易かつ高速に情報の消
去をすることができた。Furthermore, information can be easily and quickly erased by irradiating a continuous laser beam with an output power of 3111 W onto the amorphous recording bit portion 13, heating it above the crystallization temperature of the recording film 7, and slowly cooling it. did it.
第２図にガラス基板の上にＴｅａ＋Ｇｅｔ５１ｎ４（ａ
ｔ％）合金簿摸を膜厚２００ＯＡでスパッタ法により成
膜したサンプルの温度６０ ’Ｃ、相対湿度８０％ＲＨ
における環境試験の結果を示す。Figure 2 shows Tea+Get51n4 (a
t%) The temperature of the sample was 60'C, the relative humidity was 80%RH, and the alloy book was formed into a film by sputtering with a film thickness of 200OA.
The results of environmental tests are shown below.
同図は、初期の表面反射率Ｒｏに対する変化率Ｒ／ Ｒ
Ｏでプロットしであるが、２０日後でもほとんど変化率
Ｒ／ 、Ｒｏに変化はみられず、膜が安定して維持され
ていることがわかる。また、ｘｉ回折の結果では成膜直
後のサンプルは非晶質であり、２０日後のサンプルでも
非晶質であった。The figure shows the rate of change R/R with respect to the initial surface reflectance Ro.
As plotted against O, there is almost no change in the rate of change R/ and Ro even after 20 days, indicating that the film is maintained stably. Furthermore, the results of xi diffraction showed that the sample immediately after film formation was amorphous, and the sample 20 days later was also amorphous.
（比較例）
比較例としてガラス基板上にスパッタ法にて、Ｔｅ薄膜
、Ｇｅ薄膜及びＴｅａ５Ｇｅ＋ｓ （ａｔ％）合金Ｉ
Ｆａを膜厚２００ＯＡで成膜した各サンプルを作成して
上記（実施例−１）と同様に温度６０℃、相対温度８０
％ＲＨにおける環境試験を行った。(Comparative example) As a comparative example, a Te thin film, a Ge thin film, and a Tea5Ge+s (at%) alloy I were deposited on a glass substrate by sputtering.
Each sample was prepared by forming a film of Fa with a thickness of 200OA, and the temperature was 60℃ and the relative temperature was 80℃ in the same manner as above (Example-1).
An environmental test was conducted at %RH.
その結果、従来のＴｅ薄膜ではＲ／Ｒｏが初期から大き
く低下し、２０日後のサンプルをＸ線回折で調べると、
すでに記録膜は結晶化していた。As a result, in the conventional Te thin film, R/Ro decreased significantly from the initial stage, and when the sample was examined by X-ray diffraction after 20 days,
The recording film had already crystallized.
また、Ｇ、ｅｌ膜ではＲ／ Ｒｏが増加し、２０日後の
サンプルをＸ線回折で調べると、まだ非晶質であったが
表面全体に錆が発生していた。さらに、共晶組成である
Ｔｅａ５Ｇｅ＋ｓではＲ／ ＲＯが徐々に低下し、２ｏ
日後のサンプルをＸ線回折で調べると、一部活晶化して
いた。In addition, R/Ro increased in the G and EL films, and when the sample was examined by X-ray diffraction after 20 days, it was still amorphous, but rust had occurred on the entire surface. Furthermore, in Tea5Ge+s, which has a eutectic composition, R/RO gradually decreases, and 2o
When the sample was examined by X-ray diffraction after several days, it was found that some of the samples had become active crystals.
このように、Ｔｅ Ｇｅ共晶合金の耐食性向上及び非晶
質の安定化にＴｅ Ｇｅ共晶合金へのＩｎ混合が非常に
有効であることが判明した。Thus, it has been found that mixing In into the Te Ge eutectic alloy is very effective in improving the corrosion resistance of the Te Ge eutectic alloy and stabilizing the amorphous state.
［発明の効果］
以上説明したように本発明によれば、Ｔｅ、Ｇｅ及びｉ
ｎを主成分とした混合物薄膜、すなわちＴｅ Ｇｅ共晶
合金にｉｎを添加した混合物薄膜で記録膜を構成したの
で、ＧｅＴｅ共品合金品合金性を著しく向上し、また非
晶質の安定性を高めることができ、このため、記録情報
が自然為去するおそれがなく、長期間にわたって安定し
た記録状態が維持される信頼性の高い光記録媒体を提供
できる。[Effect of the invention] As explained above, according to the present invention, Te, Ge and i
Since the recording film was composed of a thin film of a mixture containing n as the main component, that is, a thin film of a mixture of TeGe eutectic alloy with in added, it significantly improved the properties of the GeTe eutectic alloy and also improved the stability of the amorphous state. Therefore, it is possible to provide a highly reliable optical recording medium that maintains a stable recording state over a long period of time without the risk of recorded information being lost due to natural loss.
第１図は本発明に係る光記録媒体の一実ＴｉｆＡ例の構
成を示す断面図、第２図は本発明に係る光記録媒体の一
実施例の表面反射率変化率特性を示す図である。
１・・・光記録媒体
３・・・基板（基体）
５・・・第１の保護膜
７・・・記Ｂ膜
９・・・第２の保護膜
１１・・・ＵＶＦｉ
（Ｉ：理２“、力理士三好保男
第１図
日数 〔日Ｊ
Ｚ ２図
手わ７：ネ市正訣罰（自発）
ロＣ和６２年８月ΣＯ日FIG. 1 is a sectional view showing the structure of an example of an actual TifA optical recording medium according to the present invention, and FIG. 2 is a diagram showing the surface reflectance change rate characteristics of an example of the optical recording medium according to the present invention. . DESCRIPTION OF SYMBOLS 1... Optical recording medium 3... Substrate (substrate) 5... First protective film 7... B film 9... Second protective film 11... UVFi (I: Science 2 “,Yasuo Miyoshi, wrestler
Claims (2)
ことによつて情報の記録・消去を行なう相変化型の光記
録媒体において、 前記記録膜は、テルル（Ｔｅ）、ゲルマニウム（Ｇｅ）
及びインジウム（Ｉｎ）を主成分とする混合物薄膜であ
ることを特徴とする光記録媒体。(1) In a phase-change optical recording medium in which information is recorded and erased by reversibly changing the phase of a recording film laminated on a substrate, the recording film is made of tellurium (Te), germanium (Ge), etc. )
An optical recording medium characterized in that it is a thin film of a mixture containing indium (In) and indium (In) as main components.
だし、０＜ｘ≦０．５、０＜ｙ≦０．５ で表わされる混合物薄膜であることを特徴とする特許請
求の範囲第１項に記載の光記録媒体。(2) The recording film is a mixture thin film represented by the general formula (Te_1_-_xGe_x)_1_-_yIn_y, where 0<x≦0.5, 0<y≦0.5. The optical recording medium according to scope 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61124718A JP2557347B2 (en) | 1986-05-31 | 1986-05-31 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61124718A JP2557347B2 (en) | 1986-05-31 | 1986-05-31 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62283431A true JPS62283431A (en) | 1987-12-09 |
| JP2557347B2 JP2557347B2 (en) | 1996-11-27 |
Family
ID=14892384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61124718A Expired - Lifetime JP2557347B2 (en) | 1986-05-31 | 1986-05-31 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2557347B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6363141A (en) * | 1986-09-03 | 1988-03-19 | Toray Ind Inc | Information recording medium |
| JPS6411257A (en) * | 1987-07-03 | 1989-01-13 | Nippon Telegraph & Telephone | Phase transition type optical recording medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS612592A (en) * | 1984-06-15 | 1986-01-08 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
| JPS61152487A (en) * | 1984-12-25 | 1986-07-11 | Nippon Columbia Co Ltd | Photo-information recording medium |
| JPS62222442A (en) * | 1986-03-22 | 1987-09-30 | Nippon Telegr & Teleph Corp <Ntt> | Rewriting type optical recording medium |
| JPH02208442A (en) * | 1989-02-08 | 1990-08-20 | Sanyo Electric Co Ltd | Air conditioner |
-
1986
- 1986-05-31 JP JP61124718A patent/JP2557347B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS612592A (en) * | 1984-06-15 | 1986-01-08 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
| JPS61152487A (en) * | 1984-12-25 | 1986-07-11 | Nippon Columbia Co Ltd | Photo-information recording medium |
| JPS62222442A (en) * | 1986-03-22 | 1987-09-30 | Nippon Telegr & Teleph Corp <Ntt> | Rewriting type optical recording medium |
| JPH02208442A (en) * | 1989-02-08 | 1990-08-20 | Sanyo Electric Co Ltd | Air conditioner |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6363141A (en) * | 1986-09-03 | 1988-03-19 | Toray Ind Inc | Information recording medium |
| JPS6411257A (en) * | 1987-07-03 | 1989-01-13 | Nippon Telegraph & Telephone | Phase transition type optical recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2557347B2 (en) | 1996-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2709887B2 (en) | Optical recording medium and manufacturing method thereof | |
| JP3150267B2 (en) | Optical recording medium | |
| JP4145446B2 (en) | How to use optical recording media | |
| JP2001322357A (en) | Information recording medium and its manufacturing method | |
| JPH01277338A (en) | Optical recording medium | |
| JP2827202B2 (en) | Optical recording medium | |
| JP2629746B2 (en) | Optical recording medium | |
| JPS62283431A (en) | Optical recording medium | |
| JP2577349B2 (en) | Optical recording medium | |
| JP2002509633A (en) | Rewritable optical information medium | |
| JPS63228433A (en) | Optical information recording, reproducing and erasing member | |
| JP2798247B2 (en) | Optical recording medium | |
| JPH04234691A (en) | Erasable optical recording material with base of tellurium alloy, and recording method thereof | |
| JP2903969B2 (en) | Optical recording medium and recording / reproducing method using the same | |
| JPS62226438A (en) | Optical recording medium | |
| JPS61168145A (en) | Optical recording medium | |
| JPS63155439A (en) | Information recording medium | |
| JPS62202344A (en) | Optical recording medium | |
| JPH05144084A (en) | Optical recording medium and production thereof | |
| JP3075816B2 (en) | Optical recording medium | |
| JP2903970B2 (en) | Optical recording medium and recording / reproducing method using the same | |
| JP2003331467A (en) | Optical recording medium | |
| JP2004216909A (en) | Information recording medium | |
| JPS6358633A (en) | Information recording medium | |
| JPS6358632A (en) | Information recording medium |