JPS63155439A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPS63155439A JPS63155439A JP61301488A JP30148886A JPS63155439A JP S63155439 A JPS63155439 A JP S63155439A JP 61301488 A JP61301488 A JP 61301488A JP 30148886 A JP30148886 A JP 30148886A JP S63155439 A JPS63155439 A JP S63155439A
- Authority
- JP
- Japan
- Prior art keywords
- information
- phase
- recording layer
- recording
- erased
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 7
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 229910001245 Sb alloy Inorganic materials 0.000 claims 1
- 229910000765 intermetallic Inorganic materials 0.000 claims 1
- 230000007704 transition Effects 0.000 abstract description 13
- 239000000956 alloy Substances 0.000 abstract description 10
- 229910045601 alloy Inorganic materials 0.000 abstract description 10
- 238000001816 cooling Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000002178 crystalline material Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 37
- 230000003287 optical effect Effects 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 11
- 230000001678 irradiating effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、光ビームの照射により記録層に光学的特性
の変化を生じさせて情報を記録消去すると共に、この光
学的特性を検出して情報を再生するいわゆるイレーサブ
ルディスク等の情報記録媒体に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) This invention records and erases information by causing a change in optical characteristics in a recording layer by irradiating a light beam, and The present invention relates to information recording media such as so-called erasable discs that reproduce information by detecting characteristics.
（従来の技術）
情報の記録再生に加えて情報を消去することができる層
変化型の情報記録媒体として、近時、インジウム（Ｉｎ
）−アンチモン（Ｓ ｂ）合金が注目されている。例え
ば、特開昭６０−１７７４４６号においては、ｓｂを５
５乃至８０重量％含有するＩ ｎｓｂ合金に、Ａｕ、Ａ
ｇ、Ｃｕ、Ｐｄ。(Prior Art) Recently, indium (In
)-antimony (S b) alloy is attracting attention. For example, in Japanese Patent Application Laid-Open No. 60-177446, sb is 5
Insb alloy containing 5 to 80% by weight, Au, A
g, Cu, Pd.
Ｐｔ、Ａｌ、Ｓｔ、Ｇｅ、Ｇａ、Ｓｎ、Ｔｅ。Pt, Al, St, Ge, Ga, Sn, Te.
Ｓｅ及びＢｉから選択された少なくとも１種の元素を２
０重量％以下含有する材料を使用し、ＩｎＳｂ及びｓｂ
の混相と準安定π相との間の層変化を利用して情報を記
録及び消去している。π相はその反射率が混相の反射率
よりも１０乃至２０％高く、相自体の安定性が高いので
、この技術によれば反射率の差により情報を記録するこ
とができると共に、実用性が高い。また、この技術にお
いては、混和からこのπ相への相転移温度は百数十℃で
あることから、従来、記録層をπ層の層転移温度よりも
僅かに高い温度に加熱し、準安定π相を平衡相のＩｎＳ
ｂ及びｓｂの混相に戻すことにより情報を消去している
。At least one element selected from Se and Bi
Using materials containing 0% by weight or less, InSb and sb
Information is recorded and erased by utilizing the layer change between the mixed phase and the metastable π phase. The reflectance of the π phase is 10 to 20% higher than that of the mixed phase, and the phase itself is highly stable. Therefore, this technology not only allows information to be recorded based on the difference in reflectance, but also has practicality. expensive. In addition, in this technology, since the phase transition temperature from mixing to this π phase is over 100 degrees Celsius, conventionally the recording layer is heated to a temperature slightly higher than the layer transition temperature of the π layer, which stabilizes the recording layer. InS whose π phase is an equilibrium phase
Information is erased by returning to a mixed phase of b and sb.
（発明が解決しようとする問題点）
しかしながら、上述のように、相転移温度よりも僅かに
高い温度に加熱して情報を消去する場合には、相転移速
度が小さいので高速消去することができず、また、確実
に相転移させることが困難なので消去されない部分が残
存してしまうという欠点がある。(Problem to be solved by the invention) However, as mentioned above, when erasing information by heating it to a temperature slightly higher than the phase transition temperature, high-speed erasing is not possible because the phase transition speed is small. Furthermore, since it is difficult to ensure phase transition, there is a drawback that unerased portions remain.
この発明はかかる事情に鑑みてなされたものであって、
高速で、且つ確実に情報を消去することができる情報記
録媒体を提供することを目的とする。This invention was made in view of such circumstances, and
It is an object of the present invention to provide an information recording medium capable of erasing information at high speed and reliably.
［発明の構成］
（問題点を解決するための手段）
この発明に係る情報記録媒体は、基板と、その記録部分
がその溶解温度以上に加熱されて一旦溶解した後に徐冷
されて情報が消去される記録層とを有し、前記記録層に
光ビームを照射して、その照射部分に平衡相の結晶質と
非平衡相の結晶質との間の相変化を生じさせて情報を記
録消去することを特徴とする。[Structure of the Invention] (Means for Solving the Problems) An information recording medium according to the present invention is characterized in that a substrate and a recording portion thereof are heated above their melting temperature and once melted, and then slowly cooled to erase information. irradiating the recording layer with a light beam to cause a phase change between an equilibrium phase crystalline substance and a non-equilibrium phase crystalline substance in the irradiated area, thereby recording and erasing information. It is characterized by
（作用）
この発明においては、記録層の記録部分をその溶解温度
よりも高い温度に加熱して、徐冷することにより情報を
消去する。これにより、速やかに相転移させることがで
きるので、情報を高速で消去することができる。また、
一旦記録層の記録部分が溶解されるので、確実に情報を
消去することができる。(Operation) In the present invention, information is erased by heating the recording portion of the recording layer to a temperature higher than its melting temperature and slowly cooling it. As a result, phase transition can be carried out quickly, so that information can be erased at high speed. Also,
Since the recorded portion of the recording layer is once dissolved, information can be reliably erased.
（実施例）
以下、添付の図面を参照してこの発明の実施例について
具体的に説明する。第１図はこの発明の実施例に係る情
報記録媒体（光ディスク）の断面図である。基板１は透
明で材質上の経時変化が少ない材料、例えば、ガラス、
ＰＭＭＡ樹脂、ポリカーボネート樹脂（ＰＣ）、エポキ
シ樹脂又は石英等の材料でつくられている。基板１には
、保護層２、記録層３、保護層４及び保護層５がこの順
に形成されている。保護層２，４は記録層３を挟むよう
に配設されており、レーザ光の照射により記録層３が飛
散したり、穴が開いてしまうことを防止している。この
保護層２．４は、５ｉ０２、ＳｉＯ又はＡＩＮ等の誘電
体を蒸着法又はスパッタ法等により成膜して形成するこ
とができる。この保護層２，４の厚さはｌｎｍ乃至１０
μｍであることが好ましい。(Embodiments) Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings. FIG. 1 is a sectional view of an information recording medium (optical disk) according to an embodiment of the invention. The substrate 1 is made of a material that is transparent and has little change over time, such as glass,
It is made of materials such as PMMA resin, polycarbonate resin (PC), epoxy resin, or quartz. A protective layer 2, a recording layer 3, a protective layer 4, and a protective layer 5 are formed on the substrate 1 in this order. The protective layers 2 and 4 are disposed to sandwich the recording layer 3, and prevent the recording layer 3 from scattering or forming holes due to laser beam irradiation. This protective layer 2.4 can be formed by depositing a dielectric material such as 5i02, SiO, or AIN by a vapor deposition method, a sputtering method, or the like. The thickness of the protective layers 2 and 4 is 1 nm to 10 nm.
Preferably it is μm.
保護層５は光ディスクの取扱い上、庇等の損傷が発生す
ることを防止するために配設され、保護層４との密着性
が良好な材料で形成される。例えば、保護層４の上に紫
外線（ＵＶ）硬化樹脂を塗布し、この樹脂層に紫外線を
照射して硬化させることにより形成することができる。The protective layer 5 is provided to prevent the eaves from being damaged during handling of the optical disc, and is made of a material that has good adhesion to the protective layer 4. For example, it can be formed by applying an ultraviolet (UV) curing resin on the protective layer 4 and curing the resin layer by irradiating the resin layer with ultraviolet rays.
記録層３は、一般式Ｉｎ Ｓｂ （５０＜１０
０−ｘ ｘ
ｘ＜８０ （原子％））で示される組成の合金で形成さ
れている。この合金はＩｎＳｂ及びｓｂの混晶が平衡相
であり、前述の組成範囲においてこの合金が平衡相とし
て存在している場合に、この合金をレーザ光で溶解及び
急冷することにより、この合金が非平衡相の準安定π相
に相変化する゛ことが確認されている。The recording layer 3 has the general formula InSb (50<10
It is formed of an alloy having a composition expressed as: 0-x x x < 80 (atomic %). This alloy has a mixed crystal of InSb and sb as an equilibrium phase, and when this alloy exists as an equilibrium phase in the above-mentioned composition range, by melting and rapidly cooling this alloy with laser light, this alloy becomes It has been confirmed that the phase changes from an equilibrium phase to a metastable π phase.
記録層３の厚さはｌｎｍ乃至５μＩＴＩであることが好
ましい。また、この記録層３は、合金を構成する各元素
の多元同時スパッタ法又は多元蒸着法等により成膜する
ことができる。また、Ｉ ｎＳｂ合金によるスパッタ法
又は蒸着法等によっても成膜することができる。The thickness of the recording layer 3 is preferably 1 nm to 5 μITI. Further, this recording layer 3 can be formed by a multi-element simultaneous sputtering method or a multi-element vapor deposition method using each element constituting the alloy. Further, the film can also be formed by sputtering or vapor deposition using an InSb alloy.
次に、このように構成された光ディスクの動作について
説明する。この光ディスクにおいては、第１図に示すよ
うに、光ビーム８が集束レンズ７により集束されて基板
１側から記録層３に照射される。Next, the operation of the optical disc configured as described above will be explained. In this optical disc, as shown in FIG. 1, a light beam 8 is focused by a focusing lens 7 and irradiated onto the recording layer 3 from the substrate 1 side.
初期化
成膜後の記録層３は非晶質であるので、この光ディスク
、を使用する前に、記録層３を結晶化して平衡相のＩｎ
Ｓｂ及びｓｂの混晶にする。この記録層３の結晶化によ
る光ディスクの初期化は、光ビームを記録層３に順次照
射してこの光ビームにより記録層３を加熱し、この記録
層３を溶解徐冷することにより行う。Since the recording layer 3 after initialization film formation is amorphous, before using this optical disc, the recording layer 3 is crystallized to form an equilibrium phase of In.
A mixed crystal of Sb and sb is formed. Initialization of the optical disc by crystallization of the recording layer 3 is performed by sequentially irradiating the recording layer 3 with a light beam, heating the recording layer 3 with the light beam, and melting and gradually cooling the recording layer 3.
記録
光ディスクに対する情報の記録においては、記録層３に
光ビームを短時間照射し、この照射領域６を一旦溶融さ
せた後、急冷することにより非平衡相の結晶質に相変化
させる。光ビームとしては、Ｉｏｎ秒乃至２μ秒の速い
パルス状のレーザビームを使用することが好ましい。ま
た、このレーザビームの出力は、例えば、その１パルス
で記録ビット（照射領域６）を溶融させることができる
ものであればよく、通常、半導体レーザを使用した場合
には５乃至３０ｍＷである。このように記録ビット（領
域６）の急冷によってこの部分が準安定π相に変化する
ことにより、情報が記録層３に書込まれる。When recording information on a recording optical disk, the recording layer 3 is irradiated with a light beam for a short time, and the irradiated area 6 is once melted and then rapidly cooled to change the phase to a non-equilibrium crystalline state. As the light beam, it is preferable to use a fast pulsed laser beam of Ion seconds to 2 μ seconds. Further, the output of this laser beam may be any power as long as it can melt the recording bit (irradiation area 6) with one pulse, and is usually 5 to 30 mW when a semiconductor laser is used. In this way, information is written into the recording layer 3 by rapidly cooling the recording bit (area 6) and changing this portion into the metastable π phase.
再生
記録層３に書込まれた情報は、この記録ビット（照射領
域６）に光ビームを照射し、その反射光の強度を検出す
ることにより読取る。つまり、平衡相のＩｎＳｂ及びｓ
ｂの混晶よりも準安定π相のほうが反射率が高いので、
この反射光の強度を検出することにより、光ビームの照
射領域６が平衡相であるか、準安定π相であるかを判別
する。The information written in the reproduction recording layer 3 is read by irradiating this recording bit (irradiation area 6) with a light beam and detecting the intensity of the reflected light. In other words, the equilibrium phase InSb and s
Since the reflectance of the metastable π phase is higher than that of the mixed crystal of b,
By detecting the intensity of this reflected light, it is determined whether the area 6 irradiated with the light beam is in the equilibrium phase or the metastable π phase.
消去
記録層３の記録ビット（領域６）に情報記録時の光ビー
ムの出力よりも若干小さな出力で、情報記録時の光ビー
ム照射時間よりも数倍の時間光ビームを照射し、記録ビ
ット（領域６）を一旦溶解してから徐冷する。これによ
り、記録層３の記録ビットは平衡相のＩｎＳｂとｓｂの
混晶にもどり情報が消去される。この場合に、π相が速
やかに相転移するので情報を高速で消去することができ
る。また、π相を一旦溶解するので確実に平衡相に相転
移し、情報を確実に消去することができる。The recording bit (area 6) of the erasing recording layer 3 is irradiated with a light beam at an output slightly lower than the output of the light beam during information recording, and for a time several times longer than the light beam irradiation time during information recording, to erase the recording bit (area 6). Region 6) is once dissolved and then slowly cooled. As a result, the recorded bits of the recording layer 3 return to the balanced phase of InSb and sb mixed crystal, and the information is erased. In this case, since the π phase undergoes a rapid phase transition, information can be erased at high speed. Furthermore, since the π phase is once dissolved, the phase transition to the equilibrium phase is ensured, and information can be erased reliably.
次に、この発明に係る情報記録媒体を使用して情報を記
録消去した試験例について、従来例と対比しながら説明
する。Next, a test example in which information was recorded and erased using the information recording medium according to the present invention will be described in comparison with a conventional example.
試験例１
記録層３の組成をＩｎ４５Ｓｂ５５、その膜厚を１００
０人とし、保護層２，４をＳｉｏ２で形成してその膜厚
をいずれも１０００人とした光ディスクを準備した。こ
の光ディスクを１２００ｒｐｍの回転数で回転させ、半
導体レーザを使用し、初期化に際しては出力１５ｍＷの
ビームを記録層３に照射し、記録に際しては出力が１８
ｍＷでパルス幅が２００ｎｓのパルス状のビームを記−
録層３の所定部分（領域６）に照射して記録ビットを形
成し、消去に際しては出力１５ｍＷのビームを記録ビッ
ト（領域６）に照射した。その結果、記録ビットをほぼ
完全に消去することができた。Test Example 1 The composition of the recording layer 3 was In45Sb55, and the film thickness was 100
An optical disc was prepared in which the protective layers 2 and 4 were made of Sio2 and each had a film thickness of 1000 layers. This optical disk is rotated at a rotation speed of 1200 rpm, and a semiconductor laser is used to irradiate the recording layer 3 with a beam with an output of 15 mW during initialization, and an output of 18 mW during recording.
Record a pulsed beam with a pulse width of 200 ns at mW.
A predetermined portion (area 6) of the recording layer 3 was irradiated to form a recorded bit, and for erasing, a beam with an output of 15 mW was irradiated onto the recorded bit (area 6). As a result, the recorded bits could be almost completely erased.
消去部を透過型電子顕微鏡で観察し、電子線回折に供し
たところ、その実質的に全部が平衡相であ□るＩｎＳｂ
及びｓｂの混晶となっており、その部分は初期化したト
ラックと同様な組織を有していた。この結果から、記録
ビット（領域６）は一旦溶解してから徐冷されたもので
あると推測することができる。When the erased area was observed with a transmission electron microscope and subjected to electron beam diffraction, it was found that substantially all of it was InSb, which was the equilibrium phase.
and sb, and that portion had a structure similar to that of the initialized track. From this result, it can be inferred that the recording bit (area 6) was once melted and then slowly cooled.
試験例２
試験例１と同様の光ディスクを使用して、静上記録消去
を行−２た。記録に際しては、出力１８ ｍ Ｗ ｓパ
ルス幅０．２μｓのパルスレーザのビームを記録層３の
所定部分に照射して記録ビットを形成した。消去に際し
ては、出力１５ｍＷのパルスレーザのビームを記録ビッ
ト（領域６）に照射した。この場合に、ビームを１μｓ
の間照射することにより、この記録ビットをほぼ完全に
消去することができた。Test Example 2 Using the same optical disc as in Test Example 1, static recording and erasure was carried out. During recording, a predetermined portion of the recording layer 3 was irradiated with a pulsed laser beam having an output of 18 m W s and a pulse width of 0.2 μs to form recording bits. During erasing, the recorded bit (area 6) was irradiated with a pulsed laser beam with an output of 15 mW. In this case, the beam is
By irradiating for a certain period of time, the recorded bits could be almost completely erased.
従来例１
試験例１と同様の光ディスクを使用し、試験例１と同様
の条件で初期化及び記録を行った。記録の消去に際して
は、出力５ｍＷのレーザビームを記録ビットに照射した
。その結果、試験例１と異なり記録ビットが完全に消去
されず、再生信号を検出したところかなりの未消去部分
が残留した。Conventional Example 1 An optical disk similar to Test Example 1 was used, and initialization and recording were performed under the same conditions as Test Example 1. When erasing records, the recorded bits were irradiated with a laser beam with an output of 5 mW. As a result, unlike Test Example 1, the recorded bits were not completely erased, and when a reproduced signal was detected, a considerable unerased portion remained.
この記録ビットを透過型電子顕微鏡で観察し、電子線回
、折に供したところ、準安定π相が残留していることが
判明した。When this recorded bit was observed with a transmission electron microscope and subjected to electron beam diffraction and folding, it was found that a metastable π phase remained.
従来例２
試験例１と同様の光ディスクを使用し、試験例２と同様
の条件で線上記録を行った。消去に際しては、出力５ｍ
Ｗのパルスレーザを記録層３の記録ビット（領域６）に
照射した。この場合に、記録ビットをほぼ完全に消去す
るためのビーム照射時間は１０μｓであり、試験例２の
場合の１０倍の時間を要した。Conventional Example 2 Using the same optical disc as in Test Example 1, linear recording was performed under the same conditions as in Test Example 2. When erasing, the output is 5 m.
The recording bit (area 6) of the recording layer 3 was irradiated with a W pulse laser. In this case, the beam irradiation time to almost completely erase the recorded bits was 10 μs, which was 10 times longer than in Test Example 2.
［発明の効果コ
この発明によれば、記録層の記録部分を一旦その溶解温
度以上に加熱してから徐冷して情報を消去するので、速
やかに相転移させることができ、高速で情報を消去する
ことができる。また、記録部分が一旦溶解されるので、
確実に相転移させることができ、確実に情報を消去する
ことができる。[Effects of the Invention] According to this invention, the recording portion of the recording layer is heated above its melting temperature and then slowly cooled to erase the information, so that a phase transition can occur quickly and information can be transferred at high speed. Can be erased. Also, since the recorded part is once dissolved,
Phase transition can be reliably carried out, and information can be reliably erased.
第１図はこの発明の実施例に係る情報記録媒体の断面図
である。
１；基板、２．４．５．保護層、３；記録層、８；光ビ
ーム
出願人代理人 弁理士 鈴江武彦
第１図FIG. 1 is a sectional view of an information recording medium according to an embodiment of the invention. 1; Substrate, 2.4.5. Protective layer, 3; Recording layer, 8; Light beam Applicant's representative Patent attorney Takehiko Suzue Figure 1
Claims (2)
されて一旦溶解した後に徐冷されて情報が消去される記
録層とを有し、前記記録層に光ビームを照射して、その
照射部分に平衡相の結晶質と非平衡相の結晶質との間の
相変化を生じさせて情報を記録消去することを特徴とす
る情報記録媒体。(1) It has a substrate and a recording layer in which the recording portion is heated above its melting temperature and once melted, and then slowly cooled to erase information, and the recording layer is irradiated with a light beam to erase the information. An information recording medium characterized in that information is recorded and erased by causing a phase change between an equilibrium phase crystalline substance and a non-equilibrium phase crystalline substance in the irradiated portion.
り、前記平衡相がＩｎＳｂ金属間化合物を主成分とし、
前記非平衡相が準安定π相を主成分とすることを特徴と
する特許請求の範囲第１項に記載の情報記録媒体。(2) The recording layer has an In-Sb alloy as its main component, and the equilibrium phase has an InSb intermetallic compound as its main component,
2. The information recording medium according to claim 1, wherein the non-equilibrium phase has a metastable π phase as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61301488A JPS63155439A (en) | 1986-12-19 | 1986-12-19 | Information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61301488A JPS63155439A (en) | 1986-12-19 | 1986-12-19 | Information recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63155439A true JPS63155439A (en) | 1988-06-28 |
Family
ID=17897513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61301488A Pending JPS63155439A (en) | 1986-12-19 | 1986-12-19 | Information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63155439A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03114885A (en) * | 1989-09-29 | 1991-05-16 | Toshiba Corp | Information recording medium |
| EP1369860A2 (en) * | 2002-05-31 | 2003-12-10 | TDK Corporation | Optical recording medium |
| US7083894B2 (en) | 2002-06-14 | 2006-08-01 | Tdk Corporation | Optical recording medium |
-
1986
- 1986-12-19 JP JP61301488A patent/JPS63155439A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03114885A (en) * | 1989-09-29 | 1991-05-16 | Toshiba Corp | Information recording medium |
| EP1369860A2 (en) * | 2002-05-31 | 2003-12-10 | TDK Corporation | Optical recording medium |
| EP1369860A3 (en) * | 2002-05-31 | 2005-07-27 | TDK Corporation | Optical recording medium |
| US7083894B2 (en) | 2002-06-14 | 2006-08-01 | Tdk Corporation | Optical recording medium |
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