JPH01113936A - Member for recording information - Google Patents
Member for recording informationInfo
- Publication number
- JPH01113936A JPH01113936A JP62270158A JP27015887A JPH01113936A JP H01113936 A JPH01113936 A JP H01113936A JP 62270158 A JP62270158 A JP 62270158A JP 27015887 A JP27015887 A JP 27015887A JP H01113936 A JPH01113936 A JP H01113936A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording
- time
- zno
- crystallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000002425 crystallisation Methods 0.000 abstract description 11
- 230000008025 crystallization Effects 0.000 abstract description 11
- 230000003287 optical effect Effects 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光・電子線などのエネルギービーム照射によ
って情報の書き換えが可能な情報の記録用部材に係り、
特に、非晶質または結晶性の悪い状態の結晶間の相変化
による反射率変化を利用した記録部材に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an information recording member that can be rewritten by irradiation with an energy beam such as a light beam or an electron beam.
In particular, the present invention relates to a recording member that utilizes a change in reflectance due to a phase change between crystals in an amorphous or poorly crystalline state.
これまでの相変化型光デイスク媒体における記録・再生
方法は、特開昭59−71140号に示されているよう
に、記録はビームスポットを十分収束させて短時間照射
し、急熱急冷によって記録膜を完全に非晶質状態にする
ことにより行い、記録の消去は、トラック方向に長い長
円スポットなどを用いて徐熱によって非晶質状態である
記録部分を完全な結晶状態に戻すことにより行っていた
。このように、記録用と消去用では異なる二つのビーム
スポットを用いていた。これは、消去に要する時間が記
録に要する時間よりも長いことに起因している。すなわ
ち記録部分の結晶化時間が長いのである。ところが、最
近になって、アプライド・フイジクス・レターズ第50
巻11号、 191117年第667頁から第669頁
(Appl、Phys、Lett、50(11)198
7、PP667〜669)に示されているように記録時
に要するレーザ照射時間とほぼ同じ程度の時間で結晶化
が行える高速消去が可能な記録膜が開発された。この膜
を用いることにより、レーザパワーを変化させるだけで
光デイスク基板が1回転する間に単一のビームスポット
で情報の書き換えが可能となった。The conventional recording/reproducing method for phase-change optical disk media is as shown in Japanese Patent Laid-Open No. 59-71140. Recording is performed by converging a beam spot sufficiently and irradiating it for a short time, then rapidly heating and cooling it. This is done by making the film completely amorphous, and the recording is erased by returning the amorphous recorded portion to a completely crystalline state by slow heating using an elliptical spot that is long in the track direction. I was going. In this way, two different beam spots were used for recording and erasing. This is because the time required for erasing is longer than the time required for recording. In other words, the crystallization time of the recorded portion is long. However, recently, Applied Physics Letters No. 50
Volume 11, 191117, pages 667 to 669 (Appl, Phys, Lett, 50(11) 198
As shown in No. 7, PP667-669), a recording film capable of high-speed erasing and crystallization in approximately the same time as the laser irradiation time required for recording has been developed. By using this film, it became possible to rewrite information with a single beam spot during one revolution of the optical disk substrate by simply changing the laser power.
−上記従来の記@膜を用いれば、単一レーザ、′単一光
スポヅトによるオーバーライドが可能であるが、さらに
ディスクの回転速度を大きくして線速度を高め、高い情
報転送レートを実現するためには、結晶化時間を更に短
縮する必要がある。- Using the above conventional recording film, it is possible to override with a single laser or a single light spot, but it is also possible to increase the rotational speed of the disk to increase the linear velocity and achieve a high information transfer rate. For this purpose, it is necessary to further shorten the crystallization time.
本発明の目的は、結晶化時間を従来よりも更に短くする
ことにある。An object of the present invention is to further shorten the crystallization time compared to the conventional method.
上記目的は、記録膜と接して多結晶膜を設けることによ
り、達成される。The above object is achieved by providing a polycrystalline film in contact with a recording film.
この多結晶膜としては、ZnOやZnSのような、レー
ザ光照射等により蒸発・融解・変形などが起こらず、ま
た記SSの膨張や収縮などによる影響を受けない膜、す
なわち、融点が高くかつ硬度が高い膜を用いる。そして
、多結晶膜の結晶サイズの好ましい範囲は、5nm以上
1100n以下、より好ましくは5nm以上50nm以
下である。また、多結晶膜の膜厚は10nm〜1μmと
することが好ましく、さらに、1100n〜400nm
の範囲とすることがより好ましい、なお多結晶膜は透明
である方が好ましい。This polycrystalline film is a film such as ZnO or ZnS that does not evaporate, melt, or deform due to laser beam irradiation, and is not affected by expansion or contraction of the SS, that is, a film that has a high melting point and Use a membrane with high hardness. A preferable range of the crystal size of the polycrystalline film is 5 nm or more and 1100 nm or less, more preferably 5 nm or more and 50 nm or less. Further, the thickness of the polycrystalline film is preferably 10 nm to 1 μm, and more preferably 1100 nm to 400 nm.
It is more preferable that the polycrystalline film is transparent.
また本発明に用いる記録膜としては、レーザ光照射時の
最短結晶化時間が1μs以下で結晶化温度が200℃以
上と高いことが望ましい、また。Further, it is desirable that the recording film used in the present invention has a shortest crystallization time during laser beam irradiation of 1 μs or less and a high crystallization temperature of 200° C. or higher.
多結晶膜と同じ膜構造であれば結晶化時間を更に短くす
ることができる。If the film structure is the same as that of a polycrystalline film, the crystallization time can be further shortened.
結晶化している記録膜に高パワーのレーザ光照射等によ
り情報を記録するとその部分は非晶質または結晶性が悪
い状態となる0次にこの記録部分を低パワーのレーザ光
照射等で消去すると元の結晶状態に戻る。この時記録膜
と接して多結晶膜があると、記録膜が多結晶膜の影響を
受けて結晶化しやすくなる。すなわち非晶質または結晶
性が悪い状態から結晶状態に移る時間が短くなる。If information is recorded on a crystallized recording film by irradiation with a high-power laser beam, etc., that portion becomes amorphous or has poor crystallinity.Next, if this recorded portion is erased by irradiation with a low-power laser beam, etc. Returns to the original crystalline state. If there is a polycrystalline film in contact with the recording film at this time, the recording film is likely to be influenced by the polycrystalline film and crystallize. That is, the time required for transition from an amorphous or poorly crystalline state to a crystalline state becomes shorter.
この多結晶膜は結晶化時間を短縮するとともに反射層や
保護層としての効果もあるため有効である。This polycrystalline film is effective because it shortens the crystallization time and also functions as a reflective layer or a protective layer.
以下、本発明を実施例により詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第1図は、本実施例における光ディスクの構造断面図で
ある。FIG. 1 is a cross-sectional view of the structure of the optical disc in this embodiment.
まず直径5インチのガラス基板1上に、紫外線硬化樹脂
を用いてトラッキング用の溝を有する下地膜2を形成し
た。そしてこの上にイオンビームスパッタによりZnO
膜3を1100nの厚さに形成した。このZnO膜3は
融点が1800℃と高く、また透明に近く結晶サイズが
小さいため1本発明に用いる多結晶膜としては最適であ
る。このZn0wAs上に光記I#c膜として5n−T
o−8s系記録膜4を1100nの厚さに蒸着した。最
後に保護膜5として厚さ約100μmの紫外線硬化樹脂
層を設けた。このような構造のディスク媒体において、
基板1側から絞り込みレンズ6で十分収束させた半導体
レーザ光をトラッキング用の溝上に保持し、自動焦点合
わせをしながら記録膜4に直径1μm程度の記録部分を
形成した。消去は、この記録部分を半導体レーザ光によ
り融点より少し低い温度まで加熱することにより行った
。この時。First, a base film 2 having tracking grooves was formed using an ultraviolet curing resin on a glass substrate 1 having a diameter of 5 inches. Then, ZnO is deposited on top of this by ion beam sputtering.
Film 3 was formed to a thickness of 1100 nm. This ZnO film 3 has a high melting point of 1800° C., is nearly transparent, and has a small crystal size, so it is optimal as a polycrystalline film used in the present invention. 5n-T as an optical I#c film on this Zn0wAs.
An o-8s recording film 4 was deposited to a thickness of 1100 nm. Finally, an ultraviolet curing resin layer with a thickness of about 100 μm was provided as a protective film 5. In a disk medium with this structure,
A semiconductor laser beam sufficiently converged by a focusing lens 6 from the substrate 1 side was held on the tracking groove, and a recording portion with a diameter of about 1 μm was formed on the recording film 4 while automatic focusing was performed. Erasing was performed by heating this recorded portion with semiconductor laser light to a temperature slightly lower than the melting point. At this time.
ZnO膜3がない従来のディスクに比べて消去時間が1
ケタ以上(〜1μs以下)短かくなることがわかった。Erasing time is reduced by 1 compared to conventional disks without ZnO film 3.
It was found that the time was reduced by more than an order of magnitude (~1 μs or less).
また第2図のように光記録膜4とZnO膜3とを逆の順
序で形成したディスク構造や、第3図のように光記録膜
4をZnO膜3ではさんだ構造においても消去時間を短
縮することができた。Furthermore, erasing time can also be shortened in a disk structure in which the optical recording film 4 and the ZnO film 3 are formed in the reverse order as shown in Fig. 2, or in a structure in which the optical recording film 4 is sandwiched between the ZnO films 3 as shown in Fig. 3. We were able to.
本実施例では多結晶膜としてznO膜3のような透明膜
を用いたが、Pdやptのような不透明膜を用いても同
様の効果があった。またこれらの不透明膜は反射層とし
ての効果もあるので、記録感度向上や消去時間短縮にも
役立つ。In this example, a transparent film such as the ZnO film 3 was used as the polycrystalline film, but the same effect could be obtained by using an opaque film such as Pd or PT. Furthermore, since these opaque films also have an effect as a reflective layer, they are also useful for improving recording sensitivity and shortening erasing time.
これらに用いる結晶粒の大きさとしては小さい方が電気
的ノイズが小さくなるため好ましいが。As for the size of the crystal grains used in these, it is preferable to have a smaller size because electrical noise will be smaller.
5nm以下になると消去時間を短かくする効果が弱くな
る。When the thickness is less than 5 nm, the effect of shortening the erasing time becomes weaker.
本発明によれば、非晶質(記録)状態から結晶(消去)
状態に移る時間、すなわち結晶化(消去)時間を短かく
することができるので、情報転送レートを高くできる効
果がある。また、この多結晶膜は反射層や保護層として
の効果もあるため、信頼性向上に役立つ。According to the present invention, from an amorphous (recording) state to a crystalline (erasing)
Since the time required to change the state, that is, the crystallization (erase) time can be shortened, there is an effect that the information transfer rate can be increased. Furthermore, this polycrystalline film also has the effect of serving as a reflective layer and a protective layer, so it is useful for improving reliability.
第1図、第2図、第3図は1本発明の実施例における光
ディスクの縦断面図である。
l・・・ガラス基板、2・・・下地膜、3・・・多結晶
膜、4・・・光記録膜、5・・・保護膜、6・・・絞り
込みレンズ。FIGS. 1, 2, and 3 are longitudinal cross-sectional views of an optical disk according to an embodiment of the present invention. l...Glass substrate, 2... Base film, 3... Polycrystalline film, 4... Optical recording film, 5... Protective film, 6... Aperture lens.
Claims (1)
可能な記録用部材において、記録膜に接して多結晶膜を
設けたことを特徴とする情報の記録用部材。 2、上記多結晶膜の結晶粒径が5nm以上100nm以
下であることを特徴とする特許請求の範囲第1項記載の
情報の記録用部材。[Scope of Claims] 1. An information recording member capable of rewriting information by irradiation with an energy beam, characterized in that a polycrystalline film is provided in contact with the recording film. 2. The information recording member according to claim 1, wherein the polycrystalline film has a crystal grain size of 5 nm or more and 100 nm or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62270158A JP2532108B2 (en) | 1987-10-28 | 1987-10-28 | Information recording member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62270158A JP2532108B2 (en) | 1987-10-28 | 1987-10-28 | Information recording member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01113936A true JPH01113936A (en) | 1989-05-02 |
JP2532108B2 JP2532108B2 (en) | 1996-09-11 |
Family
ID=17482349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62270158A Expired - Fee Related JP2532108B2 (en) | 1987-10-28 | 1987-10-28 | Information recording member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2532108B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5617766A (en) * | 1979-07-20 | 1981-02-19 | Yamaha Motor Co Ltd | Safety device for barhandle |
JPWO2006057163A1 (en) * | 2004-11-26 | 2008-06-05 | 松下電器産業株式会社 | Optical information recording medium and optical information recording medium recording method |
US20100018639A1 (en) * | 2003-08-04 | 2010-01-28 | Sharp Kabushiki Kaisha | Method of forming micropattern, method of manufacturing optical recording medium master copy, optical recording medium master copy, optical recording medium stamper, and optical recording medium |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222249A (en) * | 1985-07-19 | 1987-01-30 | Matsushita Electric Ind Co Ltd | Optical recording carrier and its production |
JPH0192937A (en) * | 1987-10-02 | 1989-04-12 | Nippon Telegr & Teleph Corp <Ntt> | Erasing type optical recording medium |
-
1987
- 1987-10-28 JP JP62270158A patent/JP2532108B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222249A (en) * | 1985-07-19 | 1987-01-30 | Matsushita Electric Ind Co Ltd | Optical recording carrier and its production |
JPH0192937A (en) * | 1987-10-02 | 1989-04-12 | Nippon Telegr & Teleph Corp <Ntt> | Erasing type optical recording medium |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5617766A (en) * | 1979-07-20 | 1981-02-19 | Yamaha Motor Co Ltd | Safety device for barhandle |
JPS6216871B2 (en) * | 1979-07-20 | 1987-04-15 | Yamaha Motor Co Ltd | |
US20100018639A1 (en) * | 2003-08-04 | 2010-01-28 | Sharp Kabushiki Kaisha | Method of forming micropattern, method of manufacturing optical recording medium master copy, optical recording medium master copy, optical recording medium stamper, and optical recording medium |
JPWO2006057163A1 (en) * | 2004-11-26 | 2008-06-05 | 松下電器産業株式会社 | Optical information recording medium and optical information recording medium recording method |
JP4536071B2 (en) * | 2004-11-26 | 2010-09-01 | パナソニック株式会社 | Optical information recording medium and optical information recording medium recording method |
Also Published As
Publication number | Publication date |
---|---|
JP2532108B2 (en) | 1996-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |