JPH06195747A - Optical disc - Google Patents

Optical disc

Info

Publication number
JPH06195747A
JPH06195747A JP4301063A JP30106392A JPH06195747A JP H06195747 A JPH06195747 A JP H06195747A JP 4301063 A JP4301063 A JP 4301063A JP 30106392 A JP30106392 A JP 30106392A JP H06195747 A JPH06195747 A JP H06195747A
Authority
JP
Japan
Prior art keywords
layer
recording layer
recording
crystallization
optical disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4301063A
Other languages
Japanese (ja)
Inventor
Tatsunori Ide
達徳 井出
Shuichi Okubo
修一 大久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4301063A priority Critical patent/JPH06195747A/en
Publication of JPH06195747A publication Critical patent/JPH06195747A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an optical disc not deteriorating the erasing characteristic thereof even when it is used under a light source of a short wavelength or it is rotated at high speeds. CONSTITUTION:An Si3N4 layer 3 is formed adjacent to a recording layer 4 so as to facilitate the crystallization of the recording layer and a substrate 1. The crystallizing speed of the recording layer depends not only on the composition of the recording layer, but on the kind of the layer adjacent to the recording layer. Since the layer 3 is formed adjacent to the recording layer to facilitate the crystallization, the crystallizing speed of the recording layer is enhanced and the erasing characteristic is improved.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、レーザ光照射により可
逆的な相変化を用いて情報を記録する光ディスクに関す
るものであって、特に、高線速、短波長レーザに好適な
高速消去型光記録媒体に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical disc for recording information using a reversible phase change upon irradiation with a laser beam, and particularly to a high speed erasing type optical disc suitable for a high linear velocity and short wavelength laser. Recording medium

【0002】[0002]

【従来の技術】レーザ光を用いた光ディスク記録方式は
大容量記録が可能であり、非接触で高速アクセスできる
ことから、大容量メモリとして実用化が始まっている。
書換型光ディスクには、記録層の相変化を利用した相変
化型光ディスクと垂直磁化膜の磁化方向を利用した光磁
気ディスクがある。このうち、相変化型光ディスクは、
外部磁場が不用で、かつ、オーバライトが容易にできる
ことから、今後書換型光ディスクの主流になることが期
待されている。
2. Description of the Related Art An optical disk recording system using laser light is capable of large-capacity recording and can be accessed at high speed in a non-contact manner.
Rewritable optical disks include phase-change optical disks that utilize the phase change of the recording layer and magneto-optical disks that utilize the magnetization direction of the perpendicular magnetization film. Among them, the phase change type optical disc is
It is expected that it will become the mainstream of rewritable optical discs in the future, since it requires no external magnetic field and can be easily overwritten.

【0003】相変化型光ディスクでは、記録すべき情報
に応じた高パワのレーザ高スポットを記録相に照射し、
記録相の温度を局所的に上昇させることにより、結晶−
非結晶質間の相変化を起こさせて記録し、相変化にとも
なう光学定数の変化を低パワのレーザ光によって反射光
強度差として読み取ることにより再生を行っている。一
般には、非晶質状態を記録状態として用いる。情報の消
去を行う場合には、記録相を結晶化温度以上融点以下に
保持するために必要なパワのレーザ光を照射し、記録相
を結晶化させる。
In the phase change type optical disc, the recording phase is irradiated with a laser high spot of high power corresponding to the information to be recorded,
By locally increasing the temperature of the recording phase, the crystal-
Recording is performed by causing a phase change between amorphous materials, and the reproduction is performed by reading the change in the optical constants accompanying the phase change as a reflected light intensity difference by a low power laser beam. Generally, the amorphous state is used as the recording state. In the case of erasing information, the recording phase is crystallized by irradiating with a laser beam having a power required to keep the recording phase at a crystallization temperature or higher and a melting point or lower.

【0004】[0004]

【発明が解決しようとする課題】相変化型光ディスクで
は、消去を行う場合、記録相が結晶化するのに必要な時
間の間、記録層を結晶化温度以上に保持しなければなら
ない。例えば、相変化型光ディスク材料として良く知ら
れているGeSbTe系記録層では、記録層を結晶化温
度以上に50〜150ns間以上保持しなければならな
い。
In the phase change type optical disk, when erasing is performed, the recording layer must be kept at the crystallization temperature or higher for the time required for the recording phase to crystallize. For example, in a GeSbTe-based recording layer that is well known as a phase change type optical disc material, the recording layer must be kept at a crystallization temperature or higher for 50 to 150 ns or more.

【0005】一方、光ディスクには更に高速化、高密度
化が望まれる。高密度化には光ヘッドに用いる光源の波
長を短くすることが有力であるが、短波長化にともなう
集光スポットサイズの減少は、記録層が結晶化温度以上
に保たれる時間、すなわち保持時間の減少をまねいてし
まう。例えば、図2に示すように、集光ビーム径が半分
になると保持時間はほぼ半分になってしまう。また、高
速化のためのディスク回転数増加も保持時間の減少につ
ながる。保持時間の減少は、記録層の結晶化率、すなわ
ち、消去率を低下させるため、エラーレートの悪化につ
ながる。そのため、短波長光源の使用下、あるいはディ
スク高速回転下では記録層の結晶化速度を速める必要が
ある。
On the other hand, the optical disc is required to have a higher speed and a higher density. It is effective to shorten the wavelength of the light source used for the optical head for high density, but the reduction of the focused spot size with the shortening of the wavelength is the time when the recording layer is kept above the crystallization temperature, that is, the holding time. It will reduce the time. For example, as shown in FIG. 2, when the focused beam diameter is halved, the holding time is halved. Further, an increase in the number of rotations of the disk for speeding up also leads to a decrease in the holding time. The reduction of the holding time lowers the crystallization rate of the recording layer, that is, the erasing rate, which leads to the deterioration of the error rate. Therefore, it is necessary to increase the crystallization speed of the recording layer under the use of a short wavelength light source or under high speed rotation of the disk.

【0006】記録層の結晶化速度を速める手段として
は、特開平1−92937号公報に記載されているよう
な、記録層と同相の結晶相を持つ結晶核形成層を、記録
層に隣接して設ける構成が知られている。しかしなが
ら、記録層と同相の結晶相をもつ結晶核形成相を記録層
に隣接して設けた場合、情報の書換を多数回行うにう
れ、記録層と結晶核形成層とが反応して合金化してしま
い、結晶核形成層の機能が低下してしまうという問題が
ある。
As a means for increasing the crystallization speed of the recording layer, a crystal nucleation layer having a crystal phase in the same phase as that of the recording layer, as described in JP-A-1-92937, is provided adjacent to the recording layer. It is known that the structure is provided. However, when a crystal nucleation phase having a crystal phase in the same phase as the recording layer is provided adjacent to the recording layer, the recording layer and the crystal nucleation layer react with each other to form an alloy as information is rewritten many times. Therefore, there is a problem that the function of the crystal nucleation layer is deteriorated.

【0007】そこで、本発明の目的は、上述のような問
題点を解消し、短波長光源の使用下、あるいはディスク
高速回転下でも、消去率を低下させることのない光ディ
スクを提供することにある。
Therefore, an object of the present invention is to solve the above-mentioned problems and to provide an optical disk which does not reduce the erasing rate even when a short wavelength light source is used or a disk is rotated at a high speed. .

【0008】[0008]

【課題を解決するための手段】かかる目的を達成するた
めに、本発明は、レーザ光照射により記録層の化逆的な
相変化を誘起して、情報の記録・再生・消去を行う光デ
ィスクにおいて、基板上に下部保護層、結晶化促進層、
化逆的な層変化を起こす情報記録層、上部保護層、反射
層をこの順に積層し、前記結晶化促進層がSi3 4
あり、下部、上部保護層がZnS−SiO2 層であるこ
とを特徴とする。
In order to achieve the above object, the present invention provides an optical disc for recording / reproducing / erasing information by inducing a reversible phase change of a recording layer by laser irradiation. , A lower protective layer on the substrate, a crystallization promoting layer,
An information recording layer, an upper protective layer, and a reflective layer, which undergo a reversible layer change, are laminated in this order, the crystallization promoting layer is Si 3 N 4 , and the lower and upper protective layers are ZnS—SiO 2 layers. It is characterized by

【0009】[0009]

【作用】相変化型光ディスクでは、図3に示すような、
基板1上に下部層2、記録層4、上部保護層5、反射層
6をこの順に積層した構成が一般的に用いられる。我々
は研究の結果、相変化記録層の結晶化速度が記録層の組
成だけでなく、記録層にに隣接する保護層の種類に依存
することをみいだした。GeSbTe系記録層では、S
3 4 を保護層として用いることにより、記録層の結
晶化速度を速めることができる。消去時の記録層の温度
変化を考えると、図4に示したように、記録層の基板側
の方が、反射層側より速く結晶化温度に到達し、結晶化
温度以上に保たれる時間も長い。したがって、消去時の
結晶化は基板側から進行することになり、結晶化促進層
は基板側に設ける方が有効である。
In the phase change type optical disc, as shown in FIG.
A structure in which a lower layer 2, a recording layer 4, an upper protective layer 5, and a reflective layer 6 are laminated in this order on a substrate 1 is generally used. As a result of research, we found that the crystallization rate of the phase change recording layer depends not only on the composition of the recording layer but also on the type of the protective layer adjacent to the recording layer. In the GeSbTe recording layer, S
By using i 3 N 4 as the protective layer, the crystallization speed of the recording layer can be increased. Considering the temperature change of the recording layer at the time of erasing, as shown in FIG. 4, the time for the substrate side of the recording layer to reach the crystallization temperature faster than the reflection layer side and be kept above the crystallization temperature. Is also long. Therefore, crystallization during erasing proceeds from the substrate side, and it is more effective to provide the crystallization promoting layer on the substrate side.

【0010】一方記録時には、記録層の温度は融点を越
えた後、反射層側の方が、基板側より速く結晶化温度に
到達する。結晶化促進層を記録層と反射層の間に設けた
場合は、再結晶化が促進されて非晶質状態を形成するこ
とができず、良好な記録を行うことが困難となってしま
う。従って、結晶化促進層は記録層に隣接して基板との
間にのみ設けることが望ましい。
On the other hand, during recording, after the temperature of the recording layer exceeds the melting point, the crystallization temperature on the reflective layer side reaches the crystallization temperature faster than on the substrate side. When the crystallization promoting layer is provided between the recording layer and the reflecting layer, recrystallization is promoted and an amorphous state cannot be formed, which makes it difficult to perform good recording. Therefore, it is desirable to provide the crystallization promoting layer only adjacent to the recording layer and between the substrate and the substrate.

【0011】以上、本発明によれば、記録層に隣接し
て、記録層と基板の間に結晶化促進層としてSi3 4
を形成することにより、記録層の結晶化速度を速めるこ
とが可能となり、短波長光源の使用下やディスク高速回
転下でも、消去率を確保することができる。
As described above, according to the present invention, Si 3 N 4 is provided as a crystallization promoting layer between the recording layer and the substrate adjacent to the recording layer.
By forming the layer, the crystallization rate of the recording layer can be increased, and the erasing rate can be secured even when a short wavelength light source is used or the disk is rotated at high speed.

【0012】[0012]

【実施例】以下、本発明について図面を参照しながら説
明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

【0013】図1は本発明に関する光学情報記憶媒体で
ある相変化型光ディスクの構成冷である。同図におい
て、相変化型光ディスク基板1上に下部保護層2、結晶
化促進層3、記録層4、上部保護層5、反射層6を順に
積層している。
FIG. 1 shows the structure of a phase change type optical disc which is an optical information storage medium according to the present invention. In the figure, a lower protective layer 2, a crystallization promoting layer 3, a recording layer 4, an upper protective layer 5, and a reflective layer 6 are sequentially laminated on a phase change type optical disc substrate 1.

【0014】基板1はプリグループ付きポリカーボネー
ト基板である。下部保護層2はZnS−SiO2 を20
0nm、反射層はAlを60nmの厚さにそれぞれスパ
ッタリングにより積層した。また、比較のために、Zn
S−SiO2 を200nm、Ge1 SbTe7 記録層を
20nm、ZnS−SiO2 を20nm、Alを60n
m、この順に基板側から積層したディスクを評価した。
The substrate 1 is a polycarbonate substrate with a pregroup. The lower protective layer 2 is made of ZnS-SiO 2 of 20.
The reflective layer was 0 nm thick, and Al was laminated by sputtering to a thickness of 60 nm. In addition, for comparison, Zn
S-SiO 2 200 nm, Ge 1 SbTe 7 recording layer 20 nm, ZnS-SiO 2 20 nm, Al 60 n
m, a disk laminated in this order from the substrate side was evaluated.

【0015】波長830nmの光ヘッドを用い、線速を
変化させて、2.12MHz,duty=50%の信号
と、8.47MHz,duty=50%の信号を交互に
オーバライトし、各信号のC/N、消去率を測定した。
図5に示すように、結晶化促進としてSi3 4 を形成
したディスクでは、線速11.3m/sから22m/s
まで、8.47MHzの消去率はほぼ一定であり、線速
22m/sにおいても25dB程度となっている。これ
に対し、ZnS−SiO2 のみを形成した従来構成のデ
ィスクでは速線15m/s付近から消去率が低下し始
め、線速22m/sでは8.47MHzの消去率は18
dBと低い値であった。
By using an optical head having a wavelength of 830 nm, the signal of 2.12 MHz, duty = 50% and the signal of 8.47 MHz, duty = 50% are alternately overwritten by changing the linear velocity, and each signal is overwritten. The C / N and erasing rate were measured.
As shown in FIG. 5, in the disk formed with Si 3 N 4 for promoting crystallization, the linear velocity is 11.3 m / s to 22 m / s.
Until then, the erasing rate at 8.47 MHz is almost constant, and is about 25 dB at a linear velocity of 22 m / s. On the other hand, in the case of the conventional disk having only ZnS-SiO2, the erasing rate starts to drop from around the fast line of 15 m / s, and at the linear velocity of 22 m / s, the erasing rate is 18.47 MHz.
It was a low value of dB.

【0016】結晶化促進層としてSi3 4 を形成した
ディスクの繰り返しオーバライト回数と消去率の関係を
図6に示す。情報の書換を105 回行った後でも、線速
22m/sにおける8.47MHzの消去率は25dB
のままであった。
FIG. 6 shows the relationship between the number of repeated overwrites and the erasure rate of a disk having Si 3 N 4 formed as a crystallization promoting layer. Even after rewriting information 10 5 times, the erase rate at 8.47 MHz at a linear velocity of 22 m / s is 25 dB.
It remained.

【0017】[0017]

【発明の効果】以上説明したように、本発明によれば記
録層の結晶化速度を速めることが可能となり、ディスク
高速回転時あるいは短波長光源使用時でも消去特性を向
上させることができる。また本発明では、結晶化促進層
として記録層と反応することのない誘電体層を用いるの
で、情報の書換を多数回行った後でも結晶化促進の機能
が低下することはない。
As described above, according to the present invention, the crystallization speed of the recording layer can be increased, and the erasing characteristics can be improved even when the disk rotates at high speed or when a short wavelength light source is used. Further, in the present invention, since the dielectric layer that does not react with the recording layer is used as the crystallization promoting layer, the crystallization promoting function does not deteriorate even after the information is rewritten many times.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明を実現する光学情報記録媒体の一実施例
を示す断面図。
FIG. 1 is a sectional view showing an embodiment of an optical information recording medium that realizes the present invention.

【図2】集光ビームサイズ保持時間の関係を表す図。FIG. 2 is a diagram showing a relationship between condensing beam size holding times.

【図3】光学情報記録媒体の従来構成例を表す断面図。FIG. 3 is a cross-sectional view showing a conventional configuration example of an optical information recording medium.

【図4】記録層の温度履歴を示す図。FIG. 4 is a diagram showing a temperature history of a recording layer.

【図5】消去率と線速の関係を示す特性図。FIG. 5 is a characteristic diagram showing a relationship between an erasing rate and a linear velocity.

【図6】繰り返し回数と消去率の関係を示す特性図。FIG. 6 is a characteristic diagram showing the relationship between the number of repetitions and the erase rate.

【符号の説明】[Explanation of symbols]

1 基板 2 下部保護層 3 結晶化促進層(Si3 4 ) 4 記録層 5 上部保護層 6 反射層1 Substrate 2 Lower protective layer 3 Crystallization promoting layer (Si 3 N 4 ) 4 Recording layer 5 Upper protective layer 6 Reflective layer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 レーザ光照射により記録層の可逆的な相
変化を誘起して、情報の記録、再生、消去を行う光ディ
スクにおいて、基板上に、ZnS−SiO2層、Si3
4 層、可逆的な相変化を起こす記録層、ZnS−Si
2 層、反射層が順に積層されていることを特徴とする
光ディスク。
1. An optical disc for recording, reproducing, and erasing information by inducing a reversible phase change of a recording layer by irradiating a laser beam, a ZnS-SiO 2 layer, and Si 3 layer on a substrate.
N 4 layer, recording layer that causes reversible phase change, ZnS-Si
An optical disc having an O 2 layer and a reflective layer sequentially stacked.
JP4301063A 1992-11-11 1992-11-11 Optical disc Pending JPH06195747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4301063A JPH06195747A (en) 1992-11-11 1992-11-11 Optical disc

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4301063A JPH06195747A (en) 1992-11-11 1992-11-11 Optical disc

Publications (1)

Publication Number Publication Date
JPH06195747A true JPH06195747A (en) 1994-07-15

Family

ID=17892422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4301063A Pending JPH06195747A (en) 1992-11-11 1992-11-11 Optical disc

Country Status (1)

Country Link
JP (1) JPH06195747A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997034298A1 (en) * 1996-03-11 1997-09-18 Matsushita Electric Industrial Co., Ltd. Optical data recording medium, method of producing the same and method of reproducing/erasing record
WO1999044199A1 (en) * 1998-02-24 1999-09-02 Sony Corporation Optical recording medium
EP0945860A2 (en) * 1998-03-26 1999-09-29 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method for recording and reproducing information thereon
US6071587A (en) * 1997-10-01 2000-06-06 Tdk Corporation Optical recording medium and its recording method
US6096399A (en) * 1997-12-22 2000-08-01 Tdk Corporation Optical recording medium
SG81350A1 (en) * 1999-06-30 2001-06-19 Sony Corp Optical recording medium
US6268034B1 (en) 1998-08-05 2001-07-31 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method for producing the same, method for recording and reproducing information thereon and recording/reproducing apparatus
WO2001082297A1 (en) * 2000-04-20 2001-11-01 Koninklijke Philips Electronics N.V. Optical recording medium and use of such optical recording medium
US6343062B1 (en) 1997-09-26 2002-01-29 Matsushita Electric Industrial Co., Ltd Optical disk device and optical disk for recording and reproducing high-density signals
US6388984B2 (en) 1997-08-28 2002-05-14 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and its recording and reproducing method
US6656559B2 (en) 2000-10-03 2003-12-02 Tdk Corporation Optical recording medium and optical recording method therefor
WO2004008447A1 (en) * 2002-07-15 2004-01-22 Koninklijke Philips Electronics N.V. Multi-stack optical data storage medium and use of such medium
US6699637B2 (en) * 1997-04-16 2004-03-02 Asahi Kasei Kabushiki Kaisha Process for producing optical information recording medium and optical information recording medium produced by the process
US6733858B2 (en) 2000-10-03 2004-05-11 Tdk Corporation Optical recording medium and optical recording method therefor
US6811949B2 (en) 1996-10-04 2004-11-02 Mitsubishi Chemical Corporation Optical information recording medium and optical recording method
US6821707B2 (en) 1996-03-11 2004-11-23 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
KR100556452B1 (en) * 1998-08-25 2006-04-21 엘지전자 주식회사 optical recording medium
US7858166B2 (en) 2006-02-02 2010-12-28 Kabushiki Kaisha Toshiba Phase change recording medium

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0414635A (en) * 1990-05-09 1992-01-20 Hitachi Ltd Information recording member

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0414635A (en) * 1990-05-09 1992-01-20 Hitachi Ltd Information recording member

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997034298A1 (en) * 1996-03-11 1997-09-18 Matsushita Electric Industrial Co., Ltd. Optical data recording medium, method of producing the same and method of reproducing/erasing record
US7037413B1 (en) 1996-03-11 2006-05-02 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
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