JP2532108B2 - Information recording member - Google Patents
Information recording memberInfo
- Publication number
- JP2532108B2 JP2532108B2 JP62270158A JP27015887A JP2532108B2 JP 2532108 B2 JP2532108 B2 JP 2532108B2 JP 62270158 A JP62270158 A JP 62270158A JP 27015887 A JP27015887 A JP 27015887A JP 2532108 B2 JP2532108 B2 JP 2532108B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording
- time
- polycrystalline
- recording member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光・電子線などのエネルギービーム照射に
よつて情報の書き換えが可能な情報の記録用部材に係
り、特に、非晶質または結晶性の悪い状態の結晶間の相
変化による反射率変化を利用した記録部材に関する。Description: TECHNICAL FIELD The present invention relates to an information recording member in which information can be rewritten by irradiation of an energy beam such as a light beam or an electron beam. The present invention relates to a recording member utilizing a change in reflectance due to a phase change between crystals in a poor crystallinity state.
これまでの相変化型光デイスク媒体における記録・再
生方法は、特開昭59−71140号に示されているように、
記録はビームスポツトを十分収束させて短時間照射し、
急熱急冷によつて記録膜を完全に非晶質状態にすること
により行い、記録の消去は、トラツク方向に長い長円ス
ポツトなどを用いて徐熱によつて非晶質状態である記録
部分を完全な結晶状態に戻すことにより行つていた。こ
のように、記録用と消去用では異なる二つのビームスポ
ツトを用いていた。これは、消去に要する時間が記録に
要する時間よりも長いことに起因している。すなわち記
録部分の結晶化時間が長いのである。ところが、最近に
なつて、アプライド・フイジクス・レターズ第50巻11
号,1987年第667頁から第669頁(Appl.Phys.Lett.50(1
1)1987.PP667〜669)に示されているように記録時に要
するレーザ照射時間とほぼ同じ程度の時間で結晶化が行
える高速消去が可能な記録膜が開発された。この膜を用
いることにより、レーザパワーを変化させるだけで光デ
イスク基板が1回転する間に単一のビームスポツトで情
報の書き換えが可能となつた。The recording / reproducing method in the conventional phase change type optical disk medium is as described in JP-A-59-71140.
For recording, the beam spot is fully converged and irradiated for a short time.
Recording is erased by making the recording film completely amorphous by rapid heating and quenching, and recording is erased by gradually heating using an oval spot that is long in the track direction. Was carried out by returning to a completely crystalline state. Thus, two different beam spots are used for recording and erasing. This is because the time required for erasing is longer than the time required for recording. That is, the crystallization time of the recorded portion is long. However, recently, Applied Physics Letters Vol. 50 11
1987, pp. 667-669 (Appl.Phys.Lett.50 (1
1) As shown in 1987. pp. 667-669), a high-speed erasable recording film has been developed that can be crystallized in about the same time as the laser irradiation time required for recording. By using this film, it is possible to rewrite information with a single beam spot while the optical disk substrate makes one rotation only by changing the laser power.
上記従来の記録膜を用いれば、単一レーザ、単一光ス
ポツトによるオーバーライトが可能であるが、さらにデ
イスクの回転速度を大きくして線速度を高め、高い情報
転送レートを実現するためには、結晶化時間を更に短縮
する必要がある。Using the above-mentioned conventional recording film, overwriting with a single laser and a single light spot is possible, but in order to increase the rotational speed of the disk to increase the linear velocity and realize a high information transfer rate, It is necessary to further shorten the crystallization time.
本発明の目的は、結晶化時間を従来よりも更に短くす
ることにある。An object of the present invention is to further shorten the crystallization time as compared with the conventional case.
上記目的は、記録膜と接して多結晶膜を設けることに
より、達成される。The above object is achieved by providing a polycrystalline film in contact with the recording film.
ここで多結晶膜とは、同一結晶がいろいろの方位を持
って集合してできた膜のことをいい、結晶化しやすい材
料では、通常のスパッタ装置などを用いて基板を加熱す
ることなく成膜するだけで得られる。Here, the polycrystalline film refers to a film formed by gathering the same crystal in various orientations. With a material that is easily crystallized, it is formed without heating the substrate using an ordinary sputtering device. You just get it.
この多結晶膜としては、ZnOやZnSのような、レーザ光
照射等により蒸発・融解・変形などが起こらず、また記
録膜の膨張や収縮などによる影響を受けない膜、すなわ
ち、融点が高くかつ硬度が高い膜を用いる。そして、多
結晶膜の結晶サイズの好ましい範囲は、5nm以上100nm以
下、より好ましくは5nm以上50nm以下である。また、多
結晶膜の膜厚は10nm〜1μmとすることが好ましく、さ
らに、100nm〜400nmの範囲とすることがより好ましい。
なお多結晶膜は透明である方が好ましい。As this polycrystalline film, a film such as ZnO and ZnS that does not undergo evaporation / melting / deformation due to laser irradiation or the like and is not affected by expansion or contraction of the recording film, that is, has a high melting point and Use a film with high hardness. The preferable range of the crystal size of the polycrystalline film is 5 nm or more and 100 nm or less, and more preferably 5 nm or more and 50 nm or less. The thickness of the polycrystalline film is preferably 10 nm to 1 μm, more preferably 100 nm to 400 nm.
The polycrystalline film is preferably transparent.
また本発明に用いる記録膜としては、レーザ光照射時
の最短結晶化時間が1μs以下で結晶化温度が200℃以
上と高いことが望ましい。また、多結晶膜と同じ膜構造
であれば結晶化時間を更に短くすることができる。Further, as the recording film used in the present invention, it is desirable that the shortest crystallization time during laser light irradiation is 1 μs or less and the crystallization temperature is 200 ° C. or higher. Further, if the film structure is the same as that of the polycrystalline film, the crystallization time can be further shortened.
結晶化している記録膜に高パワーのレーザ光照射等に
より情報を記録するとその部分は非晶質または結晶性が
悪い状態となる。次にこの記録部分を低パワーのレーザ
光照射等で消去すると元の結晶状態に戻る。この時記録
膜と接して多結晶膜があると、記録膜が多結晶膜の影響
を受けて結晶化しやすくなる。すなわち非晶質または結
晶性が悪い状態から結晶状態に移る時間が短くなる。When information is recorded on a crystallized recording film by irradiation with high power laser light or the like, that portion becomes amorphous or has poor crystallinity. Next, when this recorded portion is erased by irradiation with low power laser light or the like, the original crystalline state is restored. At this time, if there is a polycrystalline film in contact with the recording film, the recording film is likely to be crystallized under the influence of the polycrystalline film. That is, the time required to shift from the amorphous or poorly crystalline state to the crystalline state is shortened.
この多結晶膜は結晶化時間を短縮するとともに反射層
や保護層としての効果もあるため有効である。This polycrystalline film is effective because it shortens the crystallization time and has an effect as a reflective layer or a protective layer.
以下、本発明を実施例により詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to Examples.
第1図は、本実施例における光デイスクの構造断面図
である。FIG. 1 is a structural cross-sectional view of the optical disk in this embodiment.
まず直径5インチのガラス基板1上に、紫外線硬化樹
脂を用いてトラツキング用の溝を有する下地膜2を形成
した。そしてこの上にイオンビームスパツタによりZnO
膜3を100nmの厚さに形成した。このZnO膜3は融点が18
00℃と高く、また透明に近く結晶サイズが小さいため、
本発明に用いる多結晶膜としては最適である。このZnO
膜3上に光記録膜としてSn−Te−Se系記録膜4を100nm
の厚さに蒸着した。最後に保護膜5として厚さ約100μ
mの紫外線硬化樹脂層を設けた。このような構造のデイ
スク媒体において、基板1側から絞り込みレンズ6で十
分収束させた半導体レーザ光をトラツキング用の溝上に
保持し、自動焦点合わせをしながら記録膜4に直径1μ
m程度の記録部分を形成した。消去は、この記録部分を
半導体レーザ光により融点より少し低い温度まで加熱す
ることにより行つた。この時、ZnO膜3がない従来のデ
イスクに比べて消去時間が1ケタ以上(〜1μs以下)
短かくなることがわかつた。また第2図のように光記録
膜4とZnO膜3とを逆の順序で形成したデイスク構造
や、第3図のように光記録膜4をZnO膜3ではさんだ構
造においても消去時間を短縮することができた。First, a base film 2 having a groove for tracking was formed on a glass substrate 1 having a diameter of 5 inches by using an ultraviolet curable resin. And on top of this ZnO by ion beam sputtering
The film 3 was formed to a thickness of 100 nm. This ZnO film 3 has a melting point of 18
It is as high as 00 ℃, and because it is almost transparent and the crystal size is small,
It is most suitable for the polycrystalline film used in the present invention. This ZnO
An Sn-Te-Se based recording film 4 having a thickness of 100 nm is formed on the film 3 as an optical recording film.
Deposited to a thickness of. Finally, the protective film 5 has a thickness of about 100μ.
m ultraviolet curable resin layer was provided. In the disk medium having such a structure, the semiconductor laser light sufficiently converged from the substrate 1 side by the focusing lens 6 is held on the groove for tracking, and the recording film 4 has a diameter of 1 μm while performing automatic focusing.
A recording portion of about m was formed. The erasing was performed by heating the recorded portion to a temperature slightly lower than the melting point with a semiconductor laser beam. At this time, the erase time is one digit or more (up to 1 μs or less) as compared with the conventional disk without the ZnO film 3.
I knew it would be shorter. In addition, the erase time can be shortened even in the disk structure in which the optical recording film 4 and the ZnO film 3 are formed in the reverse order as shown in FIG. 2 and the structure in which the optical recording film 4 is sandwiched by the ZnO film 3 as shown in FIG. We were able to.
本実施例では多結晶膜としてZnO膜3のような透明膜
を用いたが、PdやPtのような不透明膜を用いても同様の
効果があつた。またこれらの不透明膜は反射層としての
効果もあるので、記録感度向上や消去時間短縮にも役立
つ。In this embodiment, a transparent film such as the ZnO film 3 is used as the polycrystalline film, but an opaque film such as Pd or Pt has the same effect. Further, since these opaque films also have an effect as a reflection layer, they are useful for improving recording sensitivity and shortening erasing time.
これらに用いる結晶粒の大きさとしては小さい方が電
気的ノイズが小さくなるため好ましいが、5nm未満にな
ると消去時間を短かくする効果が弱くなる。It is preferable that the crystal grains used for these are small in size because electrical noise is small, but if it is less than 5 nm, the effect of shortening the erasing time becomes weak.
本発明によれば、非晶質(記録)状態から結晶(消
去)状態に移る時間、すなわち結晶化(消去)時間を短
かくすることができるので、情報転送レートを高くでき
る効果がある。また、この多結晶膜は反射層や保護層と
しての効果もあるため、信頼性向上に役立つ。According to the present invention, the time required to shift from the amorphous (recording) state to the crystalline (erase) state, that is, the crystallization (erase) time can be shortened, so that the information transfer rate can be increased. Further, since this polycrystalline film also has an effect as a reflection layer or a protective layer, it is useful for improving reliability.
第1図、第2図、第3図は、本発明の実施例における光
デイスクの縦断面図である。 1……ガラス基板、2……下地膜、3……多結晶膜、4
……光記録膜、5……保護膜、6……絞り込みレンズ。1, 2 and 3 are longitudinal sectional views of an optical disk in an embodiment of the present invention. 1 ... Glass substrate, 2 ... Base film, 3 ... Polycrystalline film, 4
...... Optical recording film, 5 ...... Protective film, 6 ...... Convergence lens.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 安藤 圭吉 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 昭62−22249(JP,A) 特開 昭62−247791(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Keikichi Ando 1-280, Higashi-Kengokubo, Kokubunji, Tokyo (56) References JP-A-62-22249 (JP, A) JP-A-62-22249 62-247791 (JP, A)
Claims (1)
き換えが可能な記録用部材において、記録膜に接して結
晶粒径が5nm以上100nm以下である多結晶膜を設けたこと
を特徴とする情報の記録用部材。1. A recording member in which information can be rewritten by irradiation of an energy beam, wherein a polycrystalline film having a crystal grain size of 5 nm or more and 100 nm or less is provided in contact with the recording film. Parts.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62270158A JP2532108B2 (en) | 1987-10-28 | 1987-10-28 | Information recording member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62270158A JP2532108B2 (en) | 1987-10-28 | 1987-10-28 | Information recording member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01113936A JPH01113936A (en) | 1989-05-02 |
JP2532108B2 true JP2532108B2 (en) | 1996-09-11 |
Family
ID=17482349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62270158A Expired - Fee Related JP2532108B2 (en) | 1987-10-28 | 1987-10-28 | Information recording member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2532108B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5617766A (en) * | 1979-07-20 | 1981-02-19 | Yamaha Motor Co Ltd | Safety device for barhandle |
JP4647241B2 (en) * | 2003-08-04 | 2011-03-09 | シャープ株式会社 | Optical recording medium master manufacturing method, optical recording medium stamper manufacturing method, and optical recording medium manufacturing method |
CN101133451A (en) * | 2004-11-26 | 2008-02-27 | 松下电器产业株式会社 | Optical information recording medium and recording method of optical information recording medium |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222249A (en) * | 1985-07-19 | 1987-01-30 | Matsushita Electric Ind Co Ltd | Optical recording carrier and its production |
JPH0192937A (en) * | 1987-10-02 | 1989-04-12 | Nippon Telegr & Teleph Corp <Ntt> | Erasing type optical recording medium |
-
1987
- 1987-10-28 JP JP62270158A patent/JP2532108B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH01113936A (en) | 1989-05-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |