JPH01277338A - Optical recording medium - Google Patents

Optical recording medium

Info

Publication number
JPH01277338A
JPH01277338A JP63106941A JP10694188A JPH01277338A JP H01277338 A JPH01277338 A JP H01277338A JP 63106941 A JP63106941 A JP 63106941A JP 10694188 A JP10694188 A JP 10694188A JP H01277338 A JPH01277338 A JP H01277338A
Authority
JP
Japan
Prior art keywords
recording medium
erasing
writing
recording
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63106941A
Other languages
Japanese (ja)
Inventor
Susumu Fujimori
進 藤森
Norihiro Funakoshi
船越 宣博
Hironori Yamazaki
裕基 山崎
Ikutake Yagi
生剛 八木
Nobuo Nakamura
宣夫 中村
Koichi Oka
岡 公一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Nippon Telegraph and Telephone Corp
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Nippon Telegraph and Telephone Corp
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd, Nippon Telegraph and Telephone Corp, Sumitomo Chemical Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP63106941A priority Critical patent/JPH01277338A/en
Publication of JPH01277338A publication Critical patent/JPH01277338A/en
Pending legal-status Critical Current

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  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

PURPOSE:To provide the recording medium which has the long-period preservable property of recording and high-speed erasing property of recording in combination by providing a recording layer consisting of an alloy having a specific compsn. to said medium. CONSTITUTION:The recording layer consisting of the alloy having the compsn. expressed by the formula (SbxTe1-x)1-yMy is provided. In the formula x is 0.4<=x<0.7 number; y is <=0.2 number; M is one kind of the element selected from the group consisting of Ag, Al, As, Au, and Zn, etc. The long-period stability of the writing state and the high-speed erasing property are not obtainable in combination if the (x) indicating the ratio of Sb to Te is below 0.4. The crystallization temp. of the alloy film is increased and the stability in the amorphous state is improved by the addition of the element M but the stable repetitiveness of writing and erasing is lost if the (y) indicating the ratio of the element M exceeds 0.2. The recording medium provided with the requirements such as long-period preservable property of the writing state, the high-speed erasing property and the repetitiveness of the writing-erasing with good balance is thereby obtd.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光記録媒体に関し、特に、記録情報の長期安
定性、高速消去性及び書込−消去の繰返し性が改良され
た書換型レーザー光記録媒体として好適な光記録媒体に
関する。
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an optical recording medium, and in particular to a rewritable laser that has improved long-term stability of recorded information, high-speed erasing performance, and writing-erasing repeatability. The present invention relates to an optical recording medium suitable as an optical recording medium.

〔従来の技術〕[Conventional technology]

近年、小型で高性能のレーザーの進歩に伴って、収束レ
ーザー光を照射して基板上に設けられた金属薄膜に情報
の記録を行う記録媒体が、高密度、大容量の記録を可能
にするものとして期待されている。中でも、金属薄膜の
非晶質−結晶質の転移に基づいて記録を行う書換型レー
ザー光記録媒体は、情報の書込みをレーザー光により金
属薄膜を融点以上に加熱後、急冷して非晶質化させるこ
とにより行い、また情報の消去をレーザー光により金属
薄膜を融点以上に加熱後、徐冷して結晶質化させること
により行うもので、情報の書込と消去を多数回繰り返し
て行うことができる利点があり、特に注目されている。
In recent years, with the advancement of compact and high-performance lasers, recording media that record information on a thin metal film provided on a substrate by irradiating focused laser light have enabled high-density, large-capacity recording. It is expected as such. Among these, rewritable laser beam recording media, which perform recording based on the amorphous-crystalline transition of a thin metal film, write information by heating the thin metal film with laser light to above its melting point and then rapidly cooling it to become amorphous. In addition, the information is erased by heating the thin metal film with a laser beam to a temperature above its melting point and then slowly cooling it to crystallize it.The writing and erasing of information can be repeated many times. It is attracting particular attention because of its advantages.

このような書換型レーザー光記録媒体では、(a)光デ
ィスクのような高速記録を求められる場合に・  おい
ても、書込時にレーザー光出力2hW以下、パルス幅1
00nsec以下、消去時にパルス幅1μsec以下と
いう厳しい条件下で動作しうること、(b)書込と消去
の安定した繰り返し性を有すること(実用的には、10
3回以上とされている) 、(C)書込状態の室温付近
での長期安定性が高いこと(実用的には、10年以上と
されている)などが要求される。
In such a rewritable laser optical recording medium, (a) Even when high-speed recording is required such as on an optical disk, the laser beam output during writing is 2 hW or less and the pulse width is 1
(b) have stable repeatability of writing and erasing (in practical terms,
3 times or more) and (C) high long-term stability in the written state near room temperature (practically, it is said to be 10 years or more).

しかし、これらの要求特性をバランスよく兼ね備えた記
録媒体は、未だ開発されていない。
However, a recording medium that combines these required characteristics in a well-balanced manner has not yet been developed.

例えば、純Teはガラス転移温度が室温程度(約20°
C)と低く、非晶質化させても短時間で容易に結晶質化
してしまうため記録層として用いることができないので
、従来、Teに10〜20原子%程度のGe、Sb、A
s、Bi等の不純物元素を添加することによりガラス転
移温度を100℃以上に高めたTe合金膜が記録層とし
て提案されている。
For example, pure Te has a glass transition temperature around room temperature (approximately 20°
C), and even if it is made amorphous, it easily becomes crystalline in a short period of time, so it cannot be used as a recording layer.
A Te alloy film whose glass transition temperature is increased to 100° C. or higher by adding impurity elements such as s and Bi has been proposed as a recording layer.

(発明が解決しようとする課題〕 上記のTe合金膜によれば10年以上という書込状態の
長期安定性を得ることができるが、その場合、書込状態
を消去するのに10 B sec以上、通常10〜数1
00 、czsecのパルス幅のレーザー光を照射しな
ければならなくなるため高速消去性が失われる。
(Problems to be Solved by the Invention) According to the above Te alloy film, it is possible to obtain long-term stability of the written state for more than 10 years, but in that case, it takes more than 10 B sec to erase the written state. , usually 10 to several 1
Since it is necessary to irradiate the laser beam with a pulse width of 0.00 and czsec, high-speed erasing performance is lost.

このように、従来の書換型レーザー光記録媒体は、前記
の要求特性を十分に兼ね備えていないという問題がある
As described above, conventional rewritable laser optical recording media have a problem in that they do not sufficiently meet the above-mentioned required characteristics.

そこで、本発明の目的は、前記の要求特性をバランス良
く兼ね備えた書換型レーザー光記録媒体を提供すること
にある。特に、記録の長期保存性と記録の高速消去性を
兼ね備えた書換型レーザー光記録媒体を提供することに
ある。
Therefore, an object of the present invention is to provide a rewritable laser optical recording medium that has the above-mentioned required characteristics in a well-balanced manner. Particularly, it is an object of the present invention to provide a rewritable laser beam recording medium that has both long-term storage properties and high-speed erasability of records.

〔課題を解決するための手段〕[Means to solve the problem]

前述のように、従来、Teに不純物元素を添加しその添
加量を増して行くと、非晶質状態の長期安定性は向上す
るものの、結晶化速度が低下して高速消去性が低下する
。そればかりでなく、書込、消去の繰り返しにより相分
離等の不可逆変化が発生して操り返し性も低下するもの
と考えられていた。ところが、本発明者らは、Teに従
来よりもかなり高濃度でsbを添加したTe合金薄膜で
記録層を形成することにより、意外にも上記の目的を達
成しうる記録媒体が得られることを見出した。
As described above, conventionally, when an impurity element is added to Te and the amount thereof is increased, the long-term stability of the amorphous state is improved, but the crystallization rate is lowered and the high-speed erasing property is lowered. In addition, it was thought that repeated writing and erasing would cause irreversible changes such as phase separation, resulting in a decrease in reusability. However, the present inventors have surprisingly found that by forming a recording layer with a Te alloy thin film in which sb is added to Te at a much higher concentration than before, a recording medium that can achieve the above object can be obtained. I found it.

すなわち、本発明は、式(I): (Sbz  丁e+−x  )t−y  ?Iy   
  (1)〔ここで、Xは、0.4≦x <0.7の数
であり、yは、y≦0.2の数であり、hはAg+ A
L As、 Au+Bi+ Cu+ Ga、 Ge、 
In+ Pb+ Pt+ Se、 Si、 Sn及びZ
nからなる群から選ばれる少なくとも1種の元素である
。〕 で表される組成の合金からなる記録層を有する光記録媒
体を提供するものである。
That is, the present invention provides formula (I): (Sbz ding e+-x) ty? Iy
(1) [Here, X is a number of 0.4≦x<0.7, y is a number of y≦0.2, and h is Ag+A
L As, Au+Bi+ Cu+ Ga, Ge,
In+ Pb+ Pt+ Se, Si, Sn and Z
At least one element selected from the group consisting of n. ] An optical recording medium having a recording layer made of an alloy having a composition represented by the following is provided.

本発明の記録媒体の記録層を構成、するTe合金は、前
記の組成を表す式(1)において、Xが0.4以上0.
7未満、好ましくは0.45〜0.65の数であり、y
が0.2以下、好ましくは0.05〜0.15の数であ
る。Teに対するsbの割合を示すXが0.4未満では
、書込状態の長期安定性、高速消去性を兼ね備えた記録
層を得ることができない。また、元素Hの添加により、
合金膜の結晶化温度が高まり非晶質状態の安定性が向上
しく特に、As+ Ge+ Se及びSiが効果的で、
中でもAs、 Geが好ましい、)、またレーザー光照
射による結晶化ひいては消去の一層の高速化が達成され
る(特に、Ag、 AI、^u、 Bi。
The Te alloy constituting the recording layer of the recording medium of the present invention has the above-mentioned composition in formula (1) where X is 0.4 or more and 0.4 or more.
is a number less than 7, preferably from 0.45 to 0.65, and y
is a number of 0.2 or less, preferably 0.05 to 0.15. If X, which indicates the ratio of sb to Te, is less than 0.4, it is impossible to obtain a recording layer that has both long-term stability of the written state and high-speed erasing performance. In addition, by adding element H,
As the crystallization temperature of the alloy film increases and the stability of the amorphous state improves, As+Ge+Se and Si are particularly effective.
Among them, As and Ge are preferable), and even faster crystallization and erasure by laser beam irradiation can be achieved (especially Ag, AI, ^u, and Bi).

Cu、 Ga、 In、 Ge+ pb、 pt、 S
n及びZnが効果的で、中でもGe、 Inが好ましい
、)が、この元素Hの割合を示すyが0.2を超えると
、書込と消去の安定した繰り返し性が損なわれる。
Cu, Ga, In, Ge+ pb, pt, S
n and Zn are effective, and among them Ge and In are preferable), but if y, which indicates the proportion of this element H, exceeds 0.2, stable repeatability of writing and erasing will be impaired.

本発明の記録媒体では、記録層は、通常、基板上に形成
される。記録層の形成方法は、特に制限されず、例えば
、真空蒸着法、スパッタリング法、などを用いることが
できる。記録層の厚さは、通常、200〜1000人の
範囲である。
In the recording medium of the present invention, the recording layer is usually formed on the substrate. The method for forming the recording layer is not particularly limited, and for example, a vacuum evaporation method, a sputtering method, etc. can be used. The thickness of the recording layer typically ranges from 200 to 1000 thick.

また、用いられる基板としては、例えば、アクリル樹脂
、ポリカーボネート樹脂、ポリイミド樹脂等の合成樹脂
、パイレックスガラス等のガラスなどが挙げられる。基
板の厚さは、通常、1.2〜1.5 m鵬の範囲である
Examples of the substrate used include synthetic resins such as acrylic resin, polycarbonate resin, and polyimide resin, and glass such as Pyrex glass. The thickness of the substrate typically ranges from 1.2 to 1.5 m.

本発明の記録媒体では、記録層の上面及び下面の少なく
とも一方、通常両面に、レーザー光による加熱の際に記
録層に穿孔や変形が生じたり、合成樹脂製の基板に不可
逆的な変形などが生じるのを防止するため、また記録層
の酸化防止のために保護層(オーバーコート層、アンダ
ーコート層)を設けることが望ましい。保護層の材料と
しては、例えば、Sing、 SiO+ A1z03.
 YzOs+ WOs+↑atO5+Cr2O3,Ce
0z+ MoOs+ In!03+ Ge0z+ Tt
Oz+ Zr0z等の無機酸化物、AIN、 BN、 
SizNm等の無機窒化物、MgFz、 CeF3等の
金属フッ化物、ZnS等の金属硫化物及びポリフェニレ
ンスルフィド、ポリテトラフルオロエチレン、ポリイミ
ド等の有機高分子物質などが挙げられる。これらの無機
材料からなる保護層は、例えば、電子線加熱蒸着等の蒸
着法、スパッタリングなどの方法で形成できる。また有
機高分子物質からなる保護層は、蒸着、スパッタリング
等の方法で形成することができ、またテトラメチルスズ
等のプラズマ重合膜も用いることができる。保護層の厚
さは、通常、200〜1500人の範囲である。
In the recording medium of the present invention, at least one of the upper surface and the lower surface of the recording layer, usually both surfaces, may be perforated or deformed during heating with laser light, or irreversible deformation of the synthetic resin substrate. It is desirable to provide a protective layer (overcoat layer, undercoat layer) in order to prevent this from occurring and to prevent oxidation of the recording layer. Examples of the material for the protective layer include Sing, SiO+ A1z03.
YzOs+ WOs+↑atO5+Cr2O3,Ce
0z+ MoOs+ In! 03+ Ge0z+ Tt
Inorganic oxides such as Oz+ Zr0z, AIN, BN,
Examples include inorganic nitrides such as SizNm, metal fluorides such as MgFz and CeF3, metal sulfides such as ZnS, and organic polymer substances such as polyphenylene sulfide, polytetrafluoroethylene, and polyimide. The protective layer made of these inorganic materials can be formed by, for example, a vapor deposition method such as electron beam heating vapor deposition, or a method such as sputtering. Further, the protective layer made of an organic polymer substance can be formed by a method such as vapor deposition or sputtering, and a plasma polymerized film of tetramethyltin or the like can also be used. The thickness of the protective layer usually ranges from 200 to 1500.

一般に、無機系の保護層は耐熱性に優れるため不可逆的
な変形などが起こり難(、書込−消去の操り返し性の高
い記録媒体を得るのに特に適している。有機系の保護層
は熱伝導率が小さいのでレーザー光により記録層の合金
膜の温度を融点以上に高める際に熱拡散によるエネルギ
ー損失が少なく、そのためより短いパルス幅のレーザー
光で書込、消去を行うことができる利点がある。
In general, inorganic protective layers have excellent heat resistance and are therefore difficult to cause irreversible deformation (and are particularly suitable for obtaining recording media with high write-erase reversibility.Organic protective layers are Since the thermal conductivity is low, there is less energy loss due to thermal diffusion when the temperature of the alloy film of the recording layer is raised above the melting point using laser light, and this has the advantage that writing and erasing can be performed using laser light with a shorter pulse width. There is.

本発明の記録媒体を製造する際に、基板として、耐熱性
の高いポリイミド等の耐熱性プラスチック、パイレック
ス等の耐熱性ガラスを使用すると、レーザー光による加
熱時の基板の変形などの恐れがないので、アンダーコー
トの保護層は不要であり、書込−消去の繰り返しの再現
性向上に有利である。
When manufacturing the recording medium of the present invention, if a heat-resistant plastic such as highly heat-resistant polyimide or heat-resistant glass such as Pyrex is used as the substrate, there is no risk of deformation of the substrate when heated by laser light. , a protective undercoat layer is not required, which is advantageous in improving repeatability of writing and erasing.

また、本発明の記録媒体の形態は特に限定されず、例え
ば、ディスク状、カード状などが挙げられる。
Further, the form of the recording medium of the present invention is not particularly limited, and examples thereof include a disk shape, a card shape, and the like.

〔作用〕[Effect]

本発明の記録媒体のバランスのとれた優れた特性が達成
される理由は必ずしも明らかではないが、本発明者らは
Sb 40〜70原子%の組成のTe −Sb合金は5
bzT6sの単相となることを見出しており、このこと
が単相状態のままでの書込−消去の繰り返しを可能にし
、さらに融点及び結晶化温度が適度であることとあいま
って、前記した種々の相対立する要求特性を向上させて
いるものと推察される。
Although it is not necessarily clear why the excellent balanced properties of the recording medium of the present invention are achieved, the present inventors have found that a Te-Sb alloy with a composition of 40 to 70 atomic % Sb is
bzT6s has been found to be a single phase, which makes it possible to repeat writing and erasing in the single phase state, and combined with the moderate melting point and crystallization temperature, it can be used for various purposes described above. It is presumed that this improves the contradictory required characteristics of

〔実施例〕〔Example〕

以下、実施例により本発明を具体的に説明する。 Hereinafter, the present invention will be specifically explained with reference to Examples.

実施例1 (1)基板として、寸法50mm四方、厚さ1.2 r
mのパイレックスガラス板、同寸法のポリカーボネート
樹脂板及び直径130鵬、厚さ1.2 mのポリカーボ
ネート樹脂円板の3種を使用した。まず、これらの基板
の片面に電子線蒸着法により膜厚150maiのSi0
g膜を形成した。次にその上に電子線加熱蒸着法により
、下記に示す12種類の組成を有する、膜厚1000人
のSb −Te −Ge合金膜を形成した。
Example 1 (1) As a substrate, dimensions 50 mm square, thickness 1.2 r
Three types of glass plates were used: a Pyrex glass plate with a diameter of 130 mm and a thickness of 1.2 m, a polycarbonate resin plate with the same dimensions, and a polycarbonate resin disk with a diameter of 130 mm and a thickness of 1.2 m. First, a Si0 film with a thickness of 150 ma was deposited on one side of these substrates by electron beam evaporation.
g film was formed. Next, an Sb-Te-Ge alloy film having a thickness of 1000 and having the following 12 types of compositions was formed thereon by electron beam heating vapor deposition.

(Sbo、 toTea、 zo) o、 qsGeo
、 65(Sbo、toTea、3g1)0.qsGe
o、 I。
(Sbo, toTea, zo) o, qsGeo
, 65 (Sbo, toTea, 3g1) 0. qsGe
o, I.

(Sbo、 toT13o、 311) +1.5oG
eo、 g。
(Sbo, toT13o, 311) +1.5oG
eo, g.

(Sbo、 1oTea、 46) 11. qsGe
o、 as(Sbo、 1oTea、 no) o、 
qsGeo、 I。
(Sbo, 1oTea, 46) 11. qsGe
o, as(Sbo, 1oTea, no) o,
qsGeo, I.

(Sbo、 boTea、 no) o、 aoGeo
、 z。
(Sbo, boTea, no) o, aoGeo
, z.

(Sba、 5oTeo、 so) o、 qsGec
+、 05(Sbo、 5oTeo、 io) o、 
Q@ce11. I。
(Sba, 5oTeo, so) o, qsGec
+, 05(Sbo, 5oTeo, io) o,
Q@ce11. I.

(Sbo、 5oTelo、 so) o、 It)c
e@、 t。
(Sbo, 5oTelo, so) o, It)c
e@, t.

(Sbo、 m5Tea、 60) 6.9Sce(1
,115(Sbo、 noTea、 6o) @* 9
@cet1. I。
(Sbo, m5Tea, 60) 6.9Sce(1
,115 (Sbo, noTea, 6o) @* 9
@cet1. I.

(Sbo、noTe6.&@)t1.5lice@、t
(Sbo, noTe6.&@) t1.5lice@, t
.

蒸着は、I XIG−’Torrの真空下で行い、sb
とTeとGeの3つの蒸着源に対する電子線出力を変化
させることにより生成する合金膜中のsb及び元素Hの
含有量を調節した。上記の組成はX線光電子分光分析に
より確認したものである0次に、得られた記録層である
Sb −Te合金膜の上に電子線蒸着法により膜厚15
00人のSi0g膜を形成した。こうして作成した記録
媒体の性能を次のようにして評価した。
The deposition was carried out under a vacuum of I
The contents of sb and element H in the produced alloy film were adjusted by changing the electron beam output for the three evaporation sources of , Te, and Ge. The above composition was confirmed by X-ray photoelectron spectroscopy. Next, a film with a thickness of 15 mm was deposited on the resulting recording layer, an Sb-Te alloy film, by electron beam evaporation.
A Si0g film of 00 people was formed. The performance of the recording medium thus produced was evaluated as follows.

(2)1尼、」L綻11 方形のポリカーボネート板及びパイレックスガラス板を
基板として作成した記録媒体を試料として用いた。
(2) A recording medium made of a rectangular polycarbonate plate and a Pyrex glass plate as a substrate was used as a sample.

光源としてAlGaAsレーザーダイオード(発振波長
8300人)を用い、直径1.4μmに収束したレ−グ
ー光を記録媒体の基板側から照射して書込と消去を行っ
た。
Writing and erasing were performed by using an AlGaAs laser diode (oscillation wavelength: 8300 nm) as a light source, and irradiating laser light converged to a diameter of 1.4 μm from the substrate side of the recording medium.

記録層の非晶質−結晶質の状態変化は、一般に結晶質状
態のほうが非晶質状態よりも光の反射率が低いことを利
用して、記録媒体の記録部に再生用レーザー光(連続発
振、レーザー光出力0.1o+W)を照射した際の反射
光量を測定し、反射率の相対変化ΔR/R(R:結晶質
状態の反射率、ΔR:非晶質状態と結晶質状態の反射率
の差)を求め指標とした。なお、上記で製造したままの
記録媒体の合金膜は非晶質と結晶質の中間状態にあるの
で、予め、−旦連続発振のレーザー光を照射して合金膜
を融点以上に加熱後徐冷して完全に結晶質化とした後に
使用した。
The change in the amorphous-crystalline state of the recording layer is achieved by using the fact that the crystalline state generally has a lower light reflectance than the amorphous state. The amount of reflected light when irradiated with oscillation, laser light output 0.1o + W) was measured, and the relative change in reflectance ΔR/R (R: reflectance in crystalline state, ΔR: reflection in amorphous state and crystalline state) was measured. (difference in rate) was determined and used as an index. Note that since the alloy film of the recording medium as produced above is in an intermediate state between amorphous and crystalline, the alloy film is first irradiated with continuous wave laser light to heat it above its melting point and then slowly cooled. It was used after complete crystallization.

1込 レーザー光の出力を15mWと一定とし、種々のパルス
幅のレーザー光を照射して反射率の相対変化が30%と
なる書込可能条件を調べた。その結果、実施例の試料で
は、基板が方形ポリカーボネート板である記録媒体では
30〜7Qnsecであり、基板がパイレックスガラス
板である記録媒体では60〜90nsecであった。
The output of the included laser beam was kept constant at 15 mW, and laser beams of various pulse widths were irradiated to investigate the conditions under which writing was possible under which the relative change in reflectance was 30%. As a result, in the samples of Examples, the recording medium whose substrate was a rectangular polycarbonate plate had a speed of 30 to 7 Qnsec, and the recording medium whose substrate was a Pyrex glass plate had a speed of 60 to 90 nsec.

逍去 上で書き込んだ信号を、照射するレーザー光の出力とパ
ルス幅を変えて消去を試み、消去可能な最も短いパルス
幅を消去速度として評価した。実施例の試料ではいずれ
の場合も、パルス幅100nsec以下の高速消去が可
能であった。Geを含まない比較例の試料では、200
nsecであった。
Attempts were made to erase the written signal by changing the output and pulse width of the irradiated laser beam, and the shortest erasable pulse width was evaluated as the erasing speed. In all cases, high-speed erasing with a pulse width of 100 nsec or less was possible for the samples of the examples. In the comparative sample that does not contain Ge, 200
It was nsec.

1込欣凰夏支定性 上で書込を行ったパイレックスガラス板を基板とする試
料に、室温から250°Cまでの種々の温度で熱処理を
加え、書込信号が100secの熱処理で半減する温度
を調べ、この温度を結晶化温度とした。その結果、実施
例の試料ではいずれの場合も結晶化温度は150°C以
上であった。これは、室温では非晶質状態が10年以上
安定であることを意味する。
A sample whose substrate is a Pyrex glass plate with writing written on it is heat treated at various temperatures from room temperature to 250°C, and the temperature at which the written signal is halved after 100 seconds of heat treatment is determined. was determined and this temperature was taken as the crystallization temperature. As a result, the crystallization temperature of the samples of Examples was 150°C or higher in all cases. This means that the amorphous state is stable for more than 10 years at room temperature.

゛入−゛′の ゛し 基板としてパイレックスガラス板を用いた試料に、書込
は、レーザー光の出力15IIW、パルス幅90nse
cで行い、消去は、レーザー光の出力6IIIW、パル
ス幅200nsecで行い、書込と消去を繰り返した。
Writing was carried out on a sample using a Pyrex glass plate as a substrate for the laser beam with an output of 15 II W and a pulse width of 90 ns.
Erasing was performed at a laser beam output of 6IIIW and a pulse width of 200 nsec, and writing and erasing were repeated.

その結果、実施例の試料では、いずれも再現性が良<1
03回以上の書込−消去の繰り返しが可能であった。繰
り返し数が5X10’回を超えると、sb含有量が40
%及び70%の試料は完全には消去することができなく
なったが、その他の実施例の試料はなお再現性が良好で
あった。
As a result, all of the samples of Examples had good reproducibility <1.
It was possible to repeat writing and erasing more than 03 times. When the number of repetitions exceeds 5X10' times, the sb content is 40
% and 70% samples could no longer be completely erased, but the samples of other examples still had good reproducibility.

(3)光ヱ土久久豊性 前記のポリカーボネート円板を基板とする記録媒体を試
料として用い、光ディスクとしての搬送波対雑音比(C
/N比)を次のようにして評価した。
(3) Optical Edoku Toyotomi The above-mentioned recording medium with a polycarbonate disk as a substrate was used as a sample, and the carrier wave-to-noise ratio (C
/N ratio) was evaluated as follows.

書込時のレーザー光の出力15ImW、パルス幅100
nsecとし、再生時のレーザー光の出力1.2mW。
Laser light output during writing: 15 ImW, pulse width: 100
nsec, and the laser light output during reproduction is 1.2 mW.

ディスク回転数180Orpmで記録、再生の実験を行
ったところ、実施例の試料ではいずれの場合もC/N比
は55dB以上であった。
When recording and reproducing experiments were conducted at a disk rotation speed of 180 rpm, the C/N ratio was 55 dB or more in all cases for the samples of the examples.

引き続きディスクの情報書込部を出力61のレーザー光
で走査したところ、実施例のディスクではいずれの場合
も書き込んだ情報を完全に消去することができた。
Subsequently, when the information writing section of the disk was scanned with a laser beam of output 61, it was possible to completely erase the written information on the disk of the example in all cases.

上記の書込−消去を103回繰り返したが、C/N比の
減少は認められず、また消し残りは生ぜず完全に消去可
能であった。
The above writing-erasing process was repeated 103 times, but no decrease in the C/N ratio was observed, and no unerased portions were left, indicating that complete erasing was possible.

実施例2 式(1)における元素Hとして、Geの代わりにAg+
 All As、 Au+ Bt+ Cu、 Ga+ 
In、 Pb+ PtI Se。
Example 2 As element H in formula (1), Ag + instead of Ge
All As, Au+ Bt+ Cu, Ga+
In, Pb+ PtI Se.

St、 Sn又はZnを使用した以外は、実施例1と同
様にして記録媒体を製造し評価した。実施例1と同等の
性能が確認されたた。中でも、AL All Au。
Recording media were manufactured and evaluated in the same manner as in Example 1, except that St, Sn, or Zn was used. Performance equivalent to that of Example 1 was confirmed. Among them, AL All Au.

Bi、 Cu、 Ga、 In+ Pb、 Pt、 S
n及びZnは高速消去性の向上に特に有効であり、As
、 Se及びSiは書込状態の安定性向上に特に有効で
あることがわかった。
Bi, Cu, Ga, In+ Pb, Pt, S
n and Zn are particularly effective in improving high-speed erasing properties, and As
, Se and Si were found to be particularly effective in improving the stability of the written state.

実施例3 記録層及び上下の保護層をRFスパッタリングにより形
成した以外は実施例1と同様にして記録媒体を製造した
。記録層形成のスパッタリングは、スパッタリングガス
としてArを用い、ガス圧5×10−”Torr、 R
F出力100Wで行い、記録層である5b−Te−Ge
合金膜の組成は、ターゲットである5b−Te−Ge合
金の組成を変えることにより調節した。
Example 3 A recording medium was manufactured in the same manner as in Example 1 except that the recording layer and the upper and lower protective layers were formed by RF sputtering. Sputtering for forming the recording layer uses Ar as a sputtering gas, and the gas pressure is 5 x 10-'' Torr, R
The recording layer was 5b-Te-Ge.
The composition of the alloy film was adjusted by changing the composition of the target 5b-Te-Ge alloy.

得られた記録媒体を実施例1と同様にして評価したとこ
ろ、書込状態の長期安定性、高速消去性、書込−消去の
繰り返し性のすべての点において、実施例1と同等の結
果が得られた。
The obtained recording medium was evaluated in the same manner as in Example 1, and results were found to be equivalent to those in Example 1 in all respects: long-term stability of writing conditions, high-speed erasing performance, and repeatability of writing and erasing. Obtained.

〔発明の効果〕〔Effect of the invention〕

本発明の光記録媒体は、従来、同時に向上させることが
できなかった書込状態の長期保存性、高速消去性及び書
込−消去の繰り返し性などの要求特性をバランスよく備
えており、書換型レーザー光記録媒体として優れたもの
である。
The optical recording medium of the present invention has well-balanced characteristics such as long-term storage of written state, high-speed erasing performance, and repeatability of writing and erasing, which could not be improved at the same time in the past, and is rewritable. It is excellent as a laser beam recording medium.

Claims (2)

【特許請求の範囲】[Claims] (1)式:(Sb_xTe_1_−_x)_t_−_y
M_y〔ここで、xは、0.4≦x<0.7の数であり
、yは、y≦0.2の数であり、MはAg、Al、As
、Au、Bi、Cu、Ga、Ge、In、Pb、Pt、
Be、Si、Sn及びZnからなる群から選ばれる少な
くとも1種の元素である。〕で表される組成の合金から
なる記録層を有する光記録媒体。
(1) Formula: (Sb_xTe_1_-_x)_t_-_y
M_y [here, x is a number of 0.4≦x<0.7, y is a number of y≦0.2, and M is Ag, Al, As
, Au, Bi, Cu, Ga, Ge, In, Pb, Pt,
At least one element selected from the group consisting of Be, Si, Sn, and Zn. ] An optical recording medium having a recording layer made of an alloy having a composition represented by:
(2)特許請求の範囲第1項記載の光記録媒体であって
、前記記録層の上面及び下面の少なくとも一方に、無機
酸化物、無機窒化物、金属フッ化物、金属硫化物及び有
機高分子物質から選ばれる少なくとも1種からなる保護
層が設けられている光記録媒体。
(2) The optical recording medium according to claim 1, wherein at least one of the upper surface and the lower surface of the recording layer contains an inorganic oxide, an inorganic nitride, a metal fluoride, a metal sulfide, and an organic polymer. An optical recording medium provided with a protective layer made of at least one substance selected from substances.
JP63106941A 1988-04-28 1988-04-28 Optical recording medium Pending JPH01277338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63106941A JPH01277338A (en) 1988-04-28 1988-04-28 Optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63106941A JPH01277338A (en) 1988-04-28 1988-04-28 Optical recording medium

Publications (1)

Publication Number Publication Date
JPH01277338A true JPH01277338A (en) 1989-11-07

Family

ID=14446407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63106941A Pending JPH01277338A (en) 1988-04-28 1988-04-28 Optical recording medium

Country Status (1)

Country Link
JP (1) JPH01277338A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02151481A (en) * 1988-12-05 1990-06-11 Hitachi Ltd Membrane for recording data and method for recording and reproducing data
JPH02249686A (en) * 1989-03-23 1990-10-05 Toray Ind Inc Data recording medium for optical card
JPH02303889A (en) * 1989-05-18 1990-12-17 Toray Ind Inc Data recording medium
EP0867868A2 (en) * 1997-03-27 1998-09-30 Mitsubishi Chemical Corporation Optical information recording medium
WO2000054982A1 (en) * 1999-03-15 2000-09-21 Matsushita Electric Industrial Co., Ltd. Information recording medium and method for manufacturing the same
US6388978B1 (en) 1998-04-16 2002-05-14 Ricoh Company, Ltd. Optical recording method for a rewritable phase-change optical recording medium
US6770346B2 (en) 2001-05-21 2004-08-03 Ricoh Company, Ltd. Optical recording medium and recording method
EP1453042A1 (en) * 2001-11-27 2004-09-01 TDK Corporation Optical recording medium and optical recording method
US6811949B2 (en) 1996-10-04 2004-11-02 Mitsubishi Chemical Corporation Optical information recording medium and optical recording method
US7241549B2 (en) 2001-09-18 2007-07-10 Ricoh Company, Ltd. Information recording medium
US7422838B1 (en) 1999-06-01 2008-09-09 Ricoh Company, Ltd. Phase-change optical recording medium
US7507523B2 (en) 2000-09-28 2009-03-24 Ricoh Company, Ltd Optical information recording medium, method of manufacturing the optical information recording medium, and method of and apparatus for recording/reproducing optical information
EP2178086A2 (en) 1998-09-09 2010-04-21 Mitsubishi Kagaku Media Co., Ltd. Optical recording method

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02151481A (en) * 1988-12-05 1990-06-11 Hitachi Ltd Membrane for recording data and method for recording and reproducing data
JPH02249686A (en) * 1989-03-23 1990-10-05 Toray Ind Inc Data recording medium for optical card
JPH02303889A (en) * 1989-05-18 1990-12-17 Toray Ind Inc Data recording medium
US6811949B2 (en) 1996-10-04 2004-11-02 Mitsubishi Chemical Corporation Optical information recording medium and optical recording method
EP0867868B1 (en) * 1997-03-27 2004-09-08 Mitsubishi Chemical Corporation Optical information recording medium
EP0867868A2 (en) * 1997-03-27 1998-09-30 Mitsubishi Chemical Corporation Optical information recording medium
EP1143432A3 (en) * 1997-03-27 2002-04-24 Mitsubishi Chemical Corporation Optical information recording medium
EP1146509A3 (en) * 1997-03-27 2002-05-02 Mitsubishi Chemical Corporation Optical information recording medium
EP1396851A2 (en) * 1997-03-27 2004-03-10 Mitsubishi Chemical Corporation Optical information recording medium
EP1396851A3 (en) * 1997-03-27 2004-03-17 Mitsubishi Chemical Corporation Optical information recording medium
US6388978B1 (en) 1998-04-16 2002-05-14 Ricoh Company, Ltd. Optical recording method for a rewritable phase-change optical recording medium
EP2178086A2 (en) 1998-09-09 2010-04-21 Mitsubishi Kagaku Media Co., Ltd. Optical recording method
KR100472314B1 (en) * 1999-03-15 2005-03-08 마쯔시다덴기산교 가부시키가이샤 Information recording medium and method for manufacturing the same
US6858277B1 (en) 1999-03-15 2005-02-22 Matsushita Electric Industrial Co., Ltd. Information recording medium and method for manufacturing the same
WO2000054982A1 (en) * 1999-03-15 2000-09-21 Matsushita Electric Industrial Co., Ltd. Information recording medium and method for manufacturing the same
US7422838B1 (en) 1999-06-01 2008-09-09 Ricoh Company, Ltd. Phase-change optical recording medium
US7507523B2 (en) 2000-09-28 2009-03-24 Ricoh Company, Ltd Optical information recording medium, method of manufacturing the optical information recording medium, and method of and apparatus for recording/reproducing optical information
US6770346B2 (en) 2001-05-21 2004-08-03 Ricoh Company, Ltd. Optical recording medium and recording method
US7241549B2 (en) 2001-09-18 2007-07-10 Ricoh Company, Ltd. Information recording medium
EP1453042A1 (en) * 2001-11-27 2004-09-01 TDK Corporation Optical recording medium and optical recording method
EP1453042A4 (en) * 2001-11-27 2007-11-07 Tdk Corp Optical recording medium and optical recording method

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