JPS62281438A - Manufacture of integrated circuit - Google Patents

Manufacture of integrated circuit

Info

Publication number
JPS62281438A
JPS62281438A JP12542186A JP12542186A JPS62281438A JP S62281438 A JPS62281438 A JP S62281438A JP 12542186 A JP12542186 A JP 12542186A JP 12542186 A JP12542186 A JP 12542186A JP S62281438 A JPS62281438 A JP S62281438A
Authority
JP
Japan
Prior art keywords
wafer
film
trimming
laser
thermal transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12542186A
Other languages
Japanese (ja)
Inventor
Kazuo Taguchi
一夫 田口
Michiaki Yamagata
通昭 山県
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP12542186A priority Critical patent/JPS62281438A/en
Publication of JPS62281438A publication Critical patent/JPS62281438A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To eliminate the possibility of laser restricting a working range for trimming and thus permitting chips to be identified by quality marks in a short time by performing the marking which is obteined according to quality of chips, thereby transferring ink to a wafer and applying laser beams to a thermal transfer film placed on the wafer. CONSTITUTION:A manufacture of IC circuit comprises two processes; one of them is a trimming process where laser beams are applied to a pattern formed on e wafer 2 to perform trimming and the other one is a marking process where the marking is cerried out eccording to the quality of the chips and then, in the manufacture of IC circuit, the above marking is performed as follows: a thermal transfer film 8 is put on the wafer 2 and ink of the film 8 is transferred to the wafer 2 after applying the laser beams to the film 8. For instance, trimming and quality judgement are carried out by using a laser trimmer and when defective chips are detected, the thermal transfer film 8 is placed on the wafer 2 according to CPU 7 and the. laser beams are applied on the film 8. As a result, the laser beams dissolve ink of the film 8 and transfer it on the wafer 2, resulting in having a defective mark on the wafer.

Description

【発明の詳細な説明】 3、発明の詳細な説明 [産業上の利用分野] 本発明は集積回路の製造方法におけるチップの良否のマ
ーク付けの改良に関するものである。
Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an improvement in marking whether a chip is good or bad in a method of manufacturing an integrated circuit.

[従来の技術] 集積回路の製造方法には、ウェハのパターンにレーザ光
を照射することによってトリミングを行うものがある。
[Prior Art] Some integrated circuit manufacturing methods involve trimming by irradiating a wafer pattern with laser light.

このようなトリミングに用いる装置をレーザトリマとす
る。第2図にレーザトリマの一構成例を示す。
A device used for such trimming is a laser trimmer. FIG. 2 shows an example of the configuration of a laser trimmer.

図で、1はウェハ2が載せられたステージである。In the figure, 1 is a stage on which a wafer 2 is placed.

3は測定部であり、例えばトリミング対象が抵抗値であ
る場合は、トリミング動作において抵抗値を随時測定す
るものである。
Reference numeral 3 denotes a measuring section, which measures the resistance value at any time during the trimming operation, for example, when the object to be trimmed is a resistance value.

4はプローブカードであり、ウェハ2のトリミングする
箇所を定める。
Reference numeral 4 denotes a probe card, which determines the portion of the wafer 2 to be trimmed.

5はレーザであり、出射光をミラー6で反射してウェハ
2に照射する。
Reference numeral 5 denotes a laser, and the emitted light is reflected by a mirror 6 and irradiated onto the wafer 2 .

7はCPUであり、測定部3とレーザ5の駆動を制御す
るとともに、ステージ1とミラー6の位置決め制御を行
う。
7 is a CPU, which controls the driving of the measuring section 3 and the laser 5, and also controls the positioning of the stage 1 and the mirror 6.

このようなレーザトリマで、CPU7のコントロール信
号により、レーザ5とステージ1を位置決めする。トリ
ミングの動作は、例えば抵抗のトリミングを行う場合は
、測定部3で抵抗を測定しながら、レーザ光で抵抗をカ
ットしていき、抵抗値を目標値に追込んでいく。そして
、測定部3からの測定信号をもとにCPU 7がチップ
の良否を判断する。
With such a laser trimmer, the laser 5 and the stage 1 are positioned by a control signal from the CPU 7. In the trimming operation, for example, when trimming a resistor, the measuring unit 3 measures the resistance, and the laser beam is used to cut the resistance to drive the resistance value to a target value. Then, based on the measurement signal from the measurement section 3, the CPU 7 determines whether the chip is good or bad.

チップが不良品である場合は、不良マークを付ける必要
がある。
If the chip is defective, it must be marked as defective.

従来、マーキングは、例えば図の破線に示すようなイン
力1〈インクを付ける手ffl>をレーザトリマに付け
て行っていた。
Conventionally, marking has been performed by applying an input force 1 (hand for applying ink ffl) to a laser trimmer, for example, as shown by the broken line in the figure.

しかし、イン力を付けると、レーザの動作範囲に制約が
でき、トリミング上問題を生じることがある。また、塗
布したインクを乾かすベーク工程が必要になり、製造に
時間がかかるという問題点が生じる。
However, applying an input force limits the operating range of the laser, which may cause problems in trimming. In addition, a baking process is required to dry the applied ink, resulting in the problem that manufacturing takes time.

本発明は上述した問題点を除去するためになされたもの
であり、トリミングにおけるレーザの動作範囲を制約す
ることなく、しかも短時間でチップに良否の識別マーク
を付けることが可能な集積回路の製造方法を実現するこ
とを目的とする。
The present invention has been made in order to eliminate the above-mentioned problems, and is capable of manufacturing integrated circuits that can mark chips as good or bad in a short time without restricting the operating range of the laser during trimming. The purpose is to realize the method.

[問題点を解決するための手段] 本発明は、 ウェハに形成されたパターンにレーザ光を照射してトリ
ミングを行う工程と、前記ウェハを分割してできるチッ
プに良否に応じてマーク付けをする工程を有する集積回
路の製造方法において、前記マーク付けは、前記ウェハ
上に熱転写用フィルムをのせ、この熱転写フィルムに前
記レーザ光を照射し、熱転写用フィルムのインクをウェ
ハに転写することによって行うことを特徴とする集積回
路の製造方法である。
[Means for Solving the Problems] The present invention includes a step of irradiating a pattern formed on a wafer with a laser beam to perform trimming, and a step of dividing the wafer and marking the resulting chips according to whether they are good or bad. In the method for manufacturing an integrated circuit including a step, the marking is performed by placing a thermal transfer film on the wafer, irradiating the thermal transfer film with the laser light, and transferring the ink of the thermal transfer film to the wafer. A method for manufacturing an integrated circuit, characterized by:

[実施例] 以下、図面を用いて本発明を説明する。[Example] Hereinafter, the present invention will be explained using the drawings.

第1図は本発明を実施するためのレーザトリマの構成例
を示した図である。第1図で、第2図と同一のものは同
一符号を付ける。
FIG. 1 is a diagram showing an example of the configuration of a laser trimmer for carrying out the present invention. Components in FIG. 1 that are the same as those in FIG. 2 are given the same reference numerals.

第1図で、8は本発明の特徴とするところの熱転写フィ
ルムであり、マーク付けを行うときには図に示すように
ウェハ2上に載せる。熱転写フィルム8の載置と移動は
、CPU7によって制御される。
In FIG. 1, reference numeral 8 denotes a thermal transfer film, which is a feature of the present invention, and is placed on the wafer 2 as shown in the figure when marking is performed. The placement and movement of the thermal transfer film 8 is controlled by the CPU 7.

このようなレーザトリマを用いて、前述した第2図のレ
ーザトリマと同様にしてトリミングと良否判定を行い、
不良品のチップが検出された場合は、CPU7により熱
転写フィルム8をウェハ2上に載せる。そして、レーザ
光をこの熱転写フィルムに照射する。これによって、熱
転写フィルム8のインクは溶融してウェハ2上に転写さ
れ、不良マークが付けられる。
Using such a laser trimmer, trimming and quality judgment are performed in the same manner as the laser trimmer shown in Fig. 2 described above.
If a defective chip is detected, a thermal transfer film 8 is placed on the wafer 2 by the CPU 7. This thermal transfer film is then irradiated with laser light. As a result, the ink on the thermal transfer film 8 is melted and transferred onto the wafer 2, and a defective mark is attached.

なお、実施例では不良である場合のみマークを付ける場
合について説明したが、これに限らず良品である場合の
みマークを付けるようにしても、良品と不良品の両方の
場合にそれぞれ良否に応じたマークを付けるようにして
もよい。
In addition, in the example, the case where a mark is attached only when the product is defective has been explained, but this is not limited to this. Even if the mark is attached only when the product is non-defective, it is possible to mark the product only when the product is non-defective and the product is defective. You may also add a mark.

[効果] 本発明によれば、マークを付ける場合のみ熱転写フィル
ムをウェハに載せるようにしているため、トリミング用
レーザの移動範囲を制限することなくチップに良否の識
別マークを付けることができる。
[Effects] According to the present invention, since the thermal transfer film is placed on the wafer only when marking is to be done, it is possible to mark the chips for identification of pass/fail without restricting the movement range of the trimming laser.

また、熱転写記録でマーク付けを行うため、インクを乾
燥させる工程が不要になり、短時間でマーク付けを行う
ことが可能になる。
Furthermore, since marking is performed by thermal transfer recording, there is no need for a step of drying the ink, making it possible to perform marking in a short time.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明を実施するためのレーザトリマの構成例
を示した図、第2図はレーザトリマの従来例の構成図で
ある。 2・・・ウェハ、3・・・測定部、5・・・レーザ、7
・・・CPU、8・・・熱転写フィルム。
FIG. 1 is a diagram showing a configuration example of a laser trimmer for implementing the present invention, and FIG. 2 is a configuration diagram of a conventional example of a laser trimmer. 2... Wafer, 3... Measuring section, 5... Laser, 7
...CPU, 8...Thermal transfer film.

Claims (1)

【特許請求の範囲】[Claims] ウェハに形成されたパターンにレーザ光を照射してトリ
ミングを行う工程と、前記ウェハを分割してできるチッ
プに良否に応じてマーク付けをする工程を有する集積回
路の製造方法において、前記マーク付けは、前記ウェハ
上に熱転写用フィルムをのせ、この熱転写フィルムに前
記レーザ光を照射し、熱転写用フィルムのインクをウェ
ハに転写することによつて行うことを特徴とする集積回
路の製造方法。
In a method for manufacturing an integrated circuit, the method includes a step of irradiating a pattern formed on a wafer with a laser beam for trimming, and a step of dividing the wafer and marking the resulting chips according to whether they are good or bad. . A method for manufacturing an integrated circuit, which is carried out by placing a thermal transfer film on the wafer, irradiating the thermal transfer film with the laser beam, and transferring the ink of the thermal transfer film to the wafer.
JP12542186A 1986-05-30 1986-05-30 Manufacture of integrated circuit Pending JPS62281438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12542186A JPS62281438A (en) 1986-05-30 1986-05-30 Manufacture of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12542186A JPS62281438A (en) 1986-05-30 1986-05-30 Manufacture of integrated circuit

Publications (1)

Publication Number Publication Date
JPS62281438A true JPS62281438A (en) 1987-12-07

Family

ID=14909686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12542186A Pending JPS62281438A (en) 1986-05-30 1986-05-30 Manufacture of integrated circuit

Country Status (1)

Country Link
JP (1) JPS62281438A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313853A (en) * 2001-04-12 2002-10-25 Seiko Instruments Inc Wafer marking device for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313853A (en) * 2001-04-12 2002-10-25 Seiko Instruments Inc Wafer marking device for semiconductor device

Similar Documents

Publication Publication Date Title
JP3193678B2 (en) Semiconductor wafer repair apparatus and method
JPS62281438A (en) Manufacture of integrated circuit
JP2649832B2 (en) Wafer inspection equipment
US4572886A (en) Optical method for integrated circuit bar identification
JPS621247B2 (en)
JPH07204876A (en) Device for drilling hole in protective film on ic surface and method for drilling hole by using the method
JPH0715921B2 (en) Marking device for simultaneous measurement of multiple chips
JP2599439B2 (en) Laser trimming device and trimming method
JP2663558B2 (en) Laser processing equipment
JP3104675B2 (en) Circuit board and marking method thereof
JPH01309345A (en) Marking of semiconductor chip and its marking apparatus
JPS6399541A (en) Semiconductor wafer prober apparatus
JPS6083343A (en) Position setter
JPH10223494A (en) Apparatus and method for marking of identifier onto semiconductor wafer
JPS62124086A (en) Laser trimming device
JPS6167904A (en) Laser trimming device
KR100493990B1 (en) Identification equipment of semiconductor wafer and method
JPS6490527A (en) Manufacture of semiconductor device
JPH06104322A (en) Semiconductor wafer and its testing method
JPS62169443A (en) Laser processing method and device therefor
JPH02295141A (en) Wiring substrate and wire-bonding thereof
JPH05211260A (en) Method for cutting tiebar of semiconductor device
JPH08274133A (en) Semiconductor wafer prober
JPH0722115B2 (en) Alignment exposure device
JPS6294971A (en) Fault indication method for laser trimming