JPS62278199A - 炭化ケイ素ウイスカの製造方法 - Google Patents

炭化ケイ素ウイスカの製造方法

Info

Publication number
JPS62278199A
JPS62278199A JP61119112A JP11911286A JPS62278199A JP S62278199 A JPS62278199 A JP S62278199A JP 61119112 A JP61119112 A JP 61119112A JP 11911286 A JP11911286 A JP 11911286A JP S62278199 A JPS62278199 A JP S62278199A
Authority
JP
Japan
Prior art keywords
sulfur
silicon carbide
compound
carrier gas
hydrocarbon compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61119112A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03356B2 (esLanguage
Inventor
Hajime Namikata
南方　甫
Toshiaki Jinno
神野　敏明
Masahiro Kanda
政博 神田
Hitoshi Ushijima
均 牛島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Priority to JP61119112A priority Critical patent/JPS62278199A/ja
Publication of JPS62278199A publication Critical patent/JPS62278199A/ja
Priority to US07/244,659 priority patent/US4855119A/en
Publication of JPH03356B2 publication Critical patent/JPH03356B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Fibers (AREA)
JP61119112A 1986-05-26 1986-05-26 炭化ケイ素ウイスカの製造方法 Granted JPS62278199A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61119112A JPS62278199A (ja) 1986-05-26 1986-05-26 炭化ケイ素ウイスカの製造方法
US07/244,659 US4855119A (en) 1986-05-26 1988-09-15 Method of manufacturing silicon carbide whisker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61119112A JPS62278199A (ja) 1986-05-26 1986-05-26 炭化ケイ素ウイスカの製造方法

Publications (2)

Publication Number Publication Date
JPS62278199A true JPS62278199A (ja) 1987-12-03
JPH03356B2 JPH03356B2 (esLanguage) 1991-01-07

Family

ID=14753214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61119112A Granted JPS62278199A (ja) 1986-05-26 1986-05-26 炭化ケイ素ウイスカの製造方法

Country Status (2)

Country Link
US (1) US4855119A (esLanguage)
JP (1) JPS62278199A (esLanguage)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087433A (en) * 1987-02-20 1992-02-11 Ibiden Co., Ltd. Method and apparatus for the production of SiC whisker
US5039501A (en) * 1990-04-12 1991-08-13 General Motors Corporation Method for growing silicon carbide whiskers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6170013A (ja) * 1984-09-13 1986-04-10 Nikkiso Co Ltd 微細繊維の製造方法
US4552740A (en) * 1985-02-22 1985-11-12 Rockwell International Corporation Process for producing amorphous and crystalline silicon nitride

Also Published As

Publication number Publication date
JPH03356B2 (esLanguage) 1991-01-07
US4855119A (en) 1989-08-08

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees