JPS622763Y2 - - Google Patents

Description

[Detailed Description of the Invention] The present invention relates to the structure of a reaction tube for a semiconductor device.

Conventionally, since the temperature of the reaction tube described above needs to be adjusted, a thermocouple is inserted into a thin tube with a sealed tip and moved inside the reaction tube to measure the internal temperature every week or for a certain period of time. I was gone. However, with the conventional structure in which a thermocouple is inserted into a tube when measuring temperature, the temperature inside the reaction tube changes when the thermocouple is inserted or moved, so it takes a very long time to wait for the temperature to stabilize. The disadvantage was that reliability was low because it was not possible to measure

An object of the present invention is to provide a reaction tube for a semiconductor device in which temperature information inside the tube can be easily monitored.

Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

Figure 1 shows a quartz furnace core tube 1 used for impurity diffusion.
A thin tube 3 for inserting a thermocouple is fixed to its inner wall surface. The orientation of the thin tube is such that the insertion port for the thermocouple 3-4 is provided on the gas introduction nozzle side of the furnace core tube 1, and the thin tube 3
A nozzle 3-3 for introducing an inert gas (for example, nitrogen gas) or a reducing gas is provided within the thermocouple 3-4 to protect the thermocouple 3-4. The inert gas is exhausted to the outside through a small diameter opening 3-1 provided at the other end of the inert gas thin tube. A total of three thermocouples 3-4 are installed at the left, right, and center portions of the temperature uniform portion where the wafer is placed. In addition, a small amount of _N2 is flowed as an inert gas. In this state, the output of the three pairs of thermocouples can be constantly monitored using a recorder or panel meter.

Therefore, even if a temperature deviation occurs in the reaction tube, the deviation can be easily monitored and settings can be corrected when the deviation is small, which not only improves the work efficiency that was wasting a lot of time. , has the effect of improving equipment operation rate and reliability. Furthermore, since the thermocouple is not repeatedly exposed to high temperature and room temperature and is kept in an inert gas, it is not oxidized and can have a long life. Furthermore, if the output of the thermocouple is taken out and used as a control signal for the temperature controller, automatic temperature correction can be easily performed. Furthermore, since the thin tube 3 is fixed to the inner wall of the reaction tube, it is possible to accurately measure the temperature near the wafer, and its insertion direction is aligned with the introduction direction of the reaction gas, so there is no need to worry about inserting or removing the wafer. It is not a hindrance.

Note that the number of thermocouples to be installed is not limited to three, and any number of thermocouples may be installed in the measurement section.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a reaction tube for explaining one embodiment of the present invention. 1...Quartz reaction tube, 2...Reaction gas introduction nozzle, 3...Thin tube, 3-1...Atmospheric gas outlet,
3-2...Thermocouple insertion port, 3-3...Atmospheric gas inlet, 3-4...Thermocouple.

Claims (1)

[Scope of utility model registration request] A reaction tube for a semiconductor device includes a thin tube having a gas inlet and a gas outlet on its inner wall surface, the gas inlet being located outside the reaction tube, and the gas outlet being located outside the reaction tube. 1. A reaction tube for a semiconductor device, characterized in that a thermocouple is inserted into the thin tube, and an inert gas is introduced into the tube.