JPH0221617A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPH0221617A JPH0221617A JP17126088A JP17126088A JPH0221617A JP H0221617 A JPH0221617 A JP H0221617A JP 17126088 A JP17126088 A JP 17126088A JP 17126088 A JP17126088 A JP 17126088A JP H0221617 A JPH0221617 A JP H0221617A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- phosphorus
- film
- quartz glass
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 238000004519 manufacturing process Methods 0.000 title claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 7
- 230000002265 prevention Effects 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 12
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 12
- 239000011574 phosphorus Substances 0.000 abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 12
- 230000006866 deterioration Effects 0.000 abstract description 9
- 229910001392 phosphorus oxide Inorganic materials 0.000 abstract description 8
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 abstract description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910000413 arsenic oxide Inorganic materials 0.000 description 1
- 229960002594 arsenic trioxide Drugs 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- KTTMEOWBIWLMSE-UHFFFAOYSA-N diarsenic trioxide Chemical compound O1[As](O2)O[As]3O[As]1O[As]2O3 KTTMEOWBIWLMSE-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体工業において使用する熱処理炉、特に
リン拡散炉に用いるキャップとチューブに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to caps and tubes for use in heat treatment furnaces, particularly phosphorus diffusion furnaces, used in the semiconductor industry.
従来の技術
従来、この種のリン拡散炉は第３図に示すようなもので
、石英ガラス製のボート５の上にウェハ４を並べて、石
英ガラス製のチューブ１の高温部１０に挿入して、石英
ガラス製のキャップ２でチューブ１に蓋をした後、カス
供給装置７からオキシ塩化リンなどのリン拡散源と窒素
と酸素をガス導入口１１からチューブ１内に供給してウ
ェハ４へのリン拡散を行うというものであった。この時
のウェハ４へのリン拡散料は、チューブ１の高温部１０
の温度、リン拡散源と窒素と酸素の流量、ボート５をチ
ューブ１の高温部１０（こ挿入している時間で制御する
。第３図は従来のリン拡散炉の断面図で、１はチューブ
、２はキャップ、３はヒータ、４はウェハ、５はボート
、７はガス供給装置、８は低温部、１０は高温部、１１
はカス導入口を示す。Conventionally, this type of phosphorus diffusion furnace is as shown in FIG. 3, in which wafers 4 are arranged on a quartz glass boat 5 and inserted into a high temperature section 10 of a quartz glass tube 1. After capping the tube 1 with a cap 2 made of quartz glass, a phosphorus diffusion source such as phosphorus oxychloride, nitrogen and oxygen are supplied from the waste supply device 7 into the tube 1 through the gas inlet 11 to supply the wafer 4 to the wafer 4. The idea was to perform phosphorus diffusion. At this time, the phosphorus diffusion material to the wafer 4 is
The temperature of the phosphorus diffusion source, the flow rate of nitrogen and oxygen, and the length of time the boat 5 is inserted into the high temperature section 10 of the tube 1 are controlled. Figure 3 is a cross-sectional view of a conventional phosphorus diffusion furnace. , 2 is a cap, 3 is a heater, 4 is a wafer, 5 is a boat, 7 is a gas supply device, 8 is a low temperature section, 10 is a high temperature section, 11
indicates the waste inlet.
発明が解決しようとする課題
第３図に示す従来のリン拡散炉では、リン拡散源と酸素
との反応で生成する酸化リンはウェハ４の表面だけでな
く、チューブ１の内面およびキャップ２の内面にも堆積
される。この時、五酸化リンは高温部１０よりも低温部
８のチューブ１およびキャップ２の内面に堆積され易い
。この石英ガラス上に堆積した酸化リンは石英ガラスと
反応してリンガラスとなり、石英ガラスの強度を著しく
劣化させる。その結果、キャップ２およびチューブ１の
開口部が破損し易くなり、キャップ２とチューブ１の洗
浄頻度と交換頻度が多くなる。Problems to be Solved by the Invention In the conventional phosphorus diffusion furnace shown in FIG. It is also deposited. At this time, phosphorus pentoxide is more likely to be deposited on the inner surfaces of the tube 1 and cap 2 in the low temperature section 8 than on the high temperature section 10. The phosphorus oxide deposited on the quartz glass reacts with the quartz glass to form phosphorus glass, which significantly deteriorates the strength of the quartz glass. As a result, the openings of the cap 2 and tube 1 become easily damaged, and the frequency of cleaning and replacement of the cap 2 and tube 1 increases.
本発明は、五酸化リンと石英ガラスとの反応を抑制する
ことで石英ガラスの劣化を防ぐことのできるチューブ１
とキャップ２の提供を目的とするものである。The present invention provides a tube 1 that can prevent deterioration of quartz glass by suppressing the reaction between phosphorus pentoxide and quartz glass.
and cap 2.
課題を解決するための手段
本発明のキャップは、キャップの表面の一部あるいは全
部をシリコン窒化膜、炭化ケイ素膜、酸化アルミニウム
膜などの石英ガラスと反応し易い物質の拡散阻止膜で被
ったものである。Means for Solving the Problems The cap of the present invention is one in which part or all of the surface of the cap is covered with a diffusion prevention film made of a substance that easily reacts with quartz glass, such as a silicon nitride film, a silicon carbide film, or an aluminum oxide film. It is.
作 用
石英ガラスの表面をシリコン窒化膜、炭化ケイ素膜、酸
化アルミニウム膜などで被うことによって、酸化リン、
酸化ヒ素、酸化ボロンなどの石英ガラスと反応し易い物
質の石英ガラスへの拡散が抑制される。その結果、石英
ガラスの強度劣化が抑制される。Function By covering the surface of quartz glass with a silicon nitride film, silicon carbide film, aluminum oxide film, etc., phosphorus oxide,
Diffusion of substances that easily react with quartz glass, such as arsenic oxide and boron oxide, into quartz glass is suppressed. As a result, deterioration in the strength of quartz glass is suppressed.
実 施 例
実施例１
第１図に示すのは、酸化リンが堆積し易い内面だけをシ
リコン窒化膜１２で被った本発明のキャップ１３の一実
施例である。このシリコン窒化膜１２によって、酸化リ
ンと石英ガラスとの反応が抑制されて、キャップ１３の
劣化が少な（なる。Embodiments Embodiment 1 FIG. 1 shows an embodiment of the cap 13 of the present invention in which only the inner surface on which phosphorus oxide is easily deposited is covered with a silicon nitride film 12. This silicon nitride film 12 suppresses the reaction between phosphorus oxide and quartz glass, so that deterioration of the cap 13 is reduced.
この実施例ではキャップ１３の内面だけをシリコン窒化
膜１２で被っであるが、キャップ１３の全面を被った場
合にはさらに劣化が少な（なる。また、石英ガラスと反
応し易い物質の拡散阻止膜としてシリコン窒化膜１２を
用いたが、炭化ケイ素膜や酸化アルミニウム膜を用いた
場合でも同様の効果が得られる。In this embodiment, only the inner surface of the cap 13 is covered with the silicon nitride film 12, but if the entire surface of the cap 13 is covered, the deterioration will be even less. Although the silicon nitride film 12 is used as the embodiment, the same effect can be obtained even if a silicon carbide film or an aluminum oxide film is used.
実施例２
第２図に示すのは、酸化リンが堆積し易い内面だけをシ
リコン窒化膜１２で被った本発明のチューブ１４の一実
施例である。このシリコン窒化膜１２によって、酸化リ
ンと石英ガラスとの反応が抑制されて、チューブ１４の
劣化が少なくなる。Embodiment 2 FIG. 2 shows an embodiment of the tube 14 of the present invention in which only the inner surface on which phosphorus oxide is likely to accumulate is covered with a silicon nitride film 12. This silicon nitride film 12 suppresses the reaction between phosphorous oxide and quartz glass, thereby reducing deterioration of the tube 14.
この実施例ではチューブ１４の内面の一部だけをシリコ
ン窒化膜１２で被っであるが、チューブ１４の全面を被
った場合にはさらに劣化が少なくなる。また、石英ガラ
スと反応し易い物質の拡散阻止膜としてシリコン窒化膜
１２を用いたが、炭化ケイ素膜や酸化アルミニウム膜を
用いた場合でも同様の効果が得られる。In this embodiment, only a portion of the inner surface of the tube 14 is covered with the silicon nitride film 12, but if the entire surface of the tube 14 is covered, the deterioration will be further reduced. Further, although the silicon nitride film 12 is used as a diffusion prevention film for a substance that easily reacts with quartz glass, the same effect can be obtained even if a silicon carbide film or an aluminum oxide film is used.
発明の効果
本発明のキャップおよびデユープを使用することによっ
て、石英ガラスの強度劣化が著しく少なくなる。Effects of the Invention By using the cap and duplex of the present invention, deterioration in the strength of quartz glass is significantly reduced.
第１図は本発明のキャップの断面図、第２図は本発明の
チューブの断面図、第３図は従来のリン拡散炉の断面図
である。
１・・・・・・チューブ、２・・・・・・キャップ、１
２・旧・・ジノコン窒化膜、１３・・・・・・キャップ
、１４・旧・・チューブ。
代理人の氏名 弁理士 粟野重孝 はか１各県 ｌ 区
第２図
／
／２ シリコン璧化膜
＼／チー−〕FIG. 1 is a sectional view of the cap of the present invention, FIG. 2 is a sectional view of the tube of the present invention, and FIG. 3 is a sectional view of a conventional phosphorus diffusion furnace. 1...Tube, 2...Cap, 1
2. Old... Zinocon nitride film, 13... Cap, 14. Old... Tube. Name of agent: Patent attorney Shigetaka Awano 1 prefecture 1 Ward 2 Figure 2 / 2 Silicon oxide film\/Qi-]
Claims (2)
の拡散阻止膜で被った石英ガラスをキャップとして用い
ることを特徴とする半導体製造装置。(1) A semiconductor manufacturing device characterized in that a cap is made of quartz glass whose surface is partially or entirely covered with a diffusion prevention film made of a substance that easily reacts with quartz.
の拡散阻止膜で被った石英ガラスをチューブとして用い
ることを特徴とする半導体製造装置。(2) A semiconductor manufacturing device characterized in that a tube is made of quartz glass whose surface is partly or entirely covered with a diffusion prevention film made of a substance that easily reacts with quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17126088A JPH0221617A (en) | 1988-07-08 | 1988-07-08 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17126088A JPH0221617A (en) | 1988-07-08 | 1988-07-08 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0221617A true JPH0221617A (en) | 1990-01-24 |
Family
ID=15920032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17126088A Pending JPH0221617A (en) | 1988-07-08 | 1988-07-08 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0221617A (en) |
-
1988
- 1988-07-08 JP JP17126088A patent/JPH0221617A/en active Pending
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