JPH01278718A - Semiconductor wafer treatment device - Google Patents

Abstract

PURPOSE:To contrive both prolongation of life of an O-ring and improvement in safety by a method wherein a quartz tube is provided on the connection part of a reactive chamber, and the generation of hardening, degeneration and cracks on the O-ring is suppressed when high temperature gas is used. CONSTITUTION:A mouthpiece tube 7 is provided along the inner wall of the connection part when an O-ring 4 is arranged, the widened part of the tube 7 is contacted to a reaction chamber 1 or the inner wall of an injection port 2, and the narrow side of the bell-mounted tube 7 is extended as far as to a part of a piping 3 and inserted therein. In this case, the O-ring 4 is not exposed directly to semiconductor gas, and as the widened part of the quartz tube 7 is contacted to the reaction chamber 1 or the inner wall of the injection port 2, heat is radiated from these parts. As a result, the generation of hardening, degeneration and cracks on the O-ring can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor wafer processing apparatus, and more particularly, to a structure of a piping connection part thereof.

Background of the Invention In recent years, various chemical vapor deposition (CVD) equipment, typified by epitaxial growth, have made remarkable progress.
In these semiconductor wafer processing equipment,
Since a rubber sealant is generally used for connection with the gas supply section, its lifespan is short, which is inconvenient for the user.

FIG. 3 is a cross-sectional view of a conventional semiconductor wafer processing apparatus, with a part of the reaction chamber omitted.

1 is a reaction chamber, 2 is a gas inlet attached to the reaction chamber, 3
4 is a rubber O-ring used for the connection between the gas inlet and the pipe, 5 is a susceptor for holding a semiconductor wafer, and 6 is a semiconductor wafer.

Problems to be Solved by the Invention When the reaction chamber is maintained at high temperature and high vacuum and supply gas is injected into the reaction chamber, the O-ring hardens and changes in quality within a short period of time, causing cracks to form. This often led to leak accidents.

The supplied gas is generally a highly toxic gas, which not only deteriorates performance but also poses an extremely serious safety problem.

An object of the present invention is to provide a new semiconductor wafer processing apparatus that extends the life of the O-ring.

Means for Solving the Problems The semiconductor wafer processing apparatus of the present invention is provided with a trumpet tube along the inner wall of the connection part provided with an O-ring, the widening part of which is in contact with the inner wall of the reaction chamber or the injection port, The narrow end of the same trumpet tube is extended and inserted into a part of the piping.

According to the present invention, the O-ring is not directly exposed to the semiconductor gas, and since the widening part of the quartz trumpet tube is in contact with the inner wall of the reaction chamber or injection port, heat is radiated from this part. Hardening, deterioration, and cracking of the O-ring can be suppressed.

Embodiments Regarding embodiments of the semiconductor wafer processing apparatus of the present invention,
This will be explained with reference to FIGS. 1 and 2.

FIG. 1 is a sectional view of essential parts of an apparatus according to an embodiment of the present invention.
is a wrapper tube which is in contact with the inner wall of the reaction chamber 1 and is inserted along each inner wall of the inlet 2 and piping 3. Note that the same parts as in the conventional example shown in FIG. 3 are given the same numbers and their explanations are omitted. FIG. 2 is a perspective view of the trumpet tube 7.

Since the O-ring 4 is not directly exposed to the supply gas, and the widening part of the quartz wrapper tube 7 is in contact with the inner wall of the reaction chamber 1 or the injection port 2, heat is radiated from this part. hardening, deterioration, and cracking can be suppressed.

Effects of the Invention According to the semiconductor wafer processing apparatus of the present invention, by installing a quartz tube at the reaction chamber connection part, it is possible to suppress the hardening, deterioration, and cracking of the O-ring even at high temperatures and when gas is used. Extends ring life and improves safety.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a main part of a semiconductor wafer processing apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view of a main structure of the same embodiment, and FIG.
The figure is a sectional view of a main part of a conventional semiconductor manufacturing apparatus. 1...Reaction chamber, 2...Inlet, 3...
Eye: Piping, 4...0 ring, 5...
Susceptor, 6... Semiconductor wafer, 7...
...Trumpet tube. Name of agent: Patent attorney Toshio Nakao (1 person) Figure 1 Figure 2

Claims (1)

[Claims] A reaction chamber for processing semiconductor wafers, an injection port attached to the reaction chamber for injecting gas, a piping section for sending the gas, and a gas-tight connection between the injection port and the piping section. A semiconductor wafer processing apparatus comprising an O-ring and a trumpet tube inserted along the inner wall of the reaction chamber and the injection port up to a part of the piping.