JPH0245915A - Reduced pressure vapor phase growth device - Google Patents
Reduced pressure vapor phase growth deviceInfo
- Publication number
- JPH0245915A JPH0245915A JP19696088A JP19696088A JPH0245915A JP H0245915 A JPH0245915 A JP H0245915A JP 19696088 A JP19696088 A JP 19696088A JP 19696088 A JP19696088 A JP 19696088A JP H0245915 A JPH0245915 A JP H0245915A
- Authority
- JP
- Japan
- Prior art keywords
- quartz tube
- vapor phase
- phase growth
- reduced pressure
- pressure vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 14
- 239000010453 quartz Substances 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000011261 inert gas Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 239000007789 gas Substances 0.000 abstract description 8
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 7
- 230000009545 invasion Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Cleaning In General (AREA)
- Prevention Of Fouling (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は減圧気相成長装置に関し、特に半導体装置の製
造等に使用される石英管を有する減圧気相成長装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reduced pressure vapor phase growth apparatus, and more particularly to a reduced pressure vapor phase growth apparatus having a quartz tube used in the manufacture of semiconductor devices.
従来、この種の減圧気相成長装置は、第３図に示すよう
にエンドキャップ（図示していない）を開は石英管６の
後部より窒素ガス１０を流した状態でウェハーの出し入
れをおこなっている。Conventionally, in this type of low-pressure vapor phase growth apparatus, as shown in FIG. 3, the end cap (not shown) is opened and the wafer is loaded or unloaded while nitrogen gas 10 is flowing from the rear of the quartz tube 6. There is.
上述の減圧気相成長装置では、石英管６内を減圧状態か
ら常圧にもどし石英管６の後部より窒素ガスを流しなが
らウェハーの出し入れを行なっているが、石英管内で窒
素ガスの対流がおこり石英管内に前面部の開口より外気
１１のまきこみが発生し、外気１１中の酸素によって半
導体製品の電気特性に問題を生じるという欠点がある。In the above-mentioned reduced pressure vapor phase growth apparatus, the inside of the quartz tube 6 is returned from a reduced pressure state to normal pressure and the wafers are loaded and unloaded while flowing nitrogen gas from the rear of the quartz tube 6, but convection of nitrogen gas occurs inside the quartz tube. There is a drawback that outside air 11 is drawn into the quartz tube through the opening at the front surface, and the oxygen in the outside air 11 causes problems in the electrical characteristics of the semiconductor product.
本発明の減圧気相成長装置は、石英管の前面部に不活性
ガスのカーテンを設け、酸素のまきごみを防止したこと
を特徴とする。The reduced pressure vapor phase growth apparatus of the present invention is characterized in that an inert gas curtain is provided on the front surface of the quartz tube to prevent oxygen from being mixed up.
次に本発明について図面を参照し説明する。第１図に減
圧気相成長装置の一実施例を示す０石英管６の中央部に
半導体ウェハーを入れたウェハーポート１３を配し、気
相成長時にはロータリーポンプ９によって減圧にし成長
ガス４を流すことにより気相成長をする。また成長後に
石英管６内を常圧にしエンドキャップ１２を開くと同時
に窒素ブローをおこなった場合、石英管６内で窒素ガス
の対流１０がおこるため、前面部の開口より外気１１の
まきこみが発生し酸素が石英管内に入り込む。第４図は
石英管前面部からの距離と酸素濃度の関係を示している
。この図から石英管内には相当の酸素が入り込んでいる
ことが分る。また第５図に示すようにコンタクト抵抗値
のバラツキも大きい。そこで第２図に示すようにエンド
キャップ１２を開けてウェハーの出し入れをする際に外
気１１のまきごみをさまたげるため、第１図に示すよう
な前面部ガス導入管２を接続し窒素カーテン７を作るこ
とにより外気１１を遮断する。これにより第４図に示す
よう酸素のまきこみは減少し、また第５図に示すように
コンタクト抵抗値が小さくなり安定した。Next, the present invention will be explained with reference to the drawings. FIG. 1 shows an embodiment of a reduced pressure vapor phase growth apparatus. A wafer port 13 containing a semiconductor wafer is placed in the center of a quartz tube 6, and during vapor phase growth, the pressure is reduced by a rotary pump 9 and the growth gas 4 is caused to flow. This results in vapor phase growth. Furthermore, if the inside of the quartz tube 6 is brought to normal pressure after growth and nitrogen blowing is performed at the same time as the end cap 12 is opened, convection 10 of nitrogen gas occurs inside the quartz tube 6, so outside air 11 is drawn in through the opening in the front part. Oxygen then enters the quartz tube. FIG. 4 shows the relationship between the distance from the front surface of the quartz tube and the oxygen concentration. This figure shows that a considerable amount of oxygen has entered the quartz tube. Furthermore, as shown in FIG. 5, the contact resistance values vary widely. Therefore, when the end cap 12 is opened and the wafers are put in and taken out, as shown in FIG. 2, in order to prevent dust from entering the outside air 11, a front gas inlet pipe 2 as shown in FIG. 1 is connected and a nitrogen curtain 7 is installed. By creating this, outside air 11 is shut off. As a result, as shown in FIG. 4, the incorporation of oxygen was reduced, and as shown in FIG. 5, the contact resistance value became small and stable.
なお、上記実施例では前面部ガス導入管を上部に設けた
例を示したが、下部に設けてもよい。また窒素ガスにつ
いて説明したが、アルゴン等の他の不活性ガスでも同様
の効果を奏することはもちろんである。In the above embodiment, the front gas introduction pipe is provided at the upper part, but it may be provided at the lower part. Although nitrogen gas has been described, it goes without saying that other inert gases such as argon can also produce similar effects.
本発明は以上説明したように、石英管の前面部に不活性
ガスのカーテンを設置したため石英管内への酸素まきこ
みがなくなり、安定した特性の半導体素子を得ることが
できる。As explained above, in the present invention, since an inert gas curtain is installed on the front surface of the quartz tube, oxygen is not injected into the quartz tube, and a semiconductor element with stable characteristics can be obtained.
第１図は本発明の一実施例を示す断面図、第２図は前面
部の構成を示す図、第３図は従来の減圧気相成長装置の
断面図、第４図は酸素のまきこみ量を示す説明図、第５
図はコンタクト抵抗値を示す説明図である。
１・・・窒素ガス、２・・・前面部ガス導入管、３・・
・後部ガス導入管、４・・・成長ガス、５・・・ヒータ
ー、６・・・石英管、７・・・窒素カーテン、８・・・
排気孔、９・・・ロータリポンプ、１０・・・窒素の対
流、１１・・・外気、１２・・・エンドキャップ、１３
・・・ウェハーボート。Fig. 1 is a cross-sectional view showing an embodiment of the present invention, Fig. 2 is a view showing the configuration of the front section, Fig. 3 is a cross-sectional view of a conventional reduced pressure vapor phase growth apparatus, and Fig. 4 is a diagram showing the amount of oxygen injected. Explanatory diagram showing 5th
The figure is an explanatory diagram showing contact resistance values. 1...Nitrogen gas, 2...Front gas introduction pipe, 3...
- Rear gas introduction pipe, 4... Growth gas, 5... Heater, 6... Quartz tube, 7... Nitrogen curtain, 8...
Exhaust hole, 9... Rotary pump, 10... Nitrogen convection, 11... Outside air, 12... End cap, 13
...Wafer boat.
Claims (1)
圧気相成長装置において、前記石英管の前面部に不活性
ガスのカーテンを設けたことを特徴とする減圧気相成長
装置。A reduced pressure vapor phase growth apparatus equipped with a quartz tube for performing vapor phase growth on a semiconductor wafer, characterized in that an inert gas curtain is provided on the front side of the quartz tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19696088A JPH0245915A (en) | 1988-08-05 | 1988-08-05 | Reduced pressure vapor phase growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19696088A JPH0245915A (en) | 1988-08-05 | 1988-08-05 | Reduced pressure vapor phase growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0245915A true JPH0245915A (en) | 1990-02-15 |
Family
ID=16366510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19696088A Pending JPH0245915A (en) | 1988-08-05 | 1988-08-05 | Reduced pressure vapor phase growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0245915A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100824042B1 (en) * | 2008-01-07 | 2008-04-21 | 강춘식 | Electronic reactive power compensation apparatus detecting parallel resonance |
-
1988
- 1988-08-05 JP JP19696088A patent/JPH0245915A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100824042B1 (en) * | 2008-01-07 | 2008-04-21 | 강춘식 | Electronic reactive power compensation apparatus detecting parallel resonance |
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