JPH0419301B2 - - Google Patents
Info
- Publication number
- JPH0419301B2 JPH0419301B2 JP60294415A JP29441585A JPH0419301B2 JP H0419301 B2 JPH0419301 B2 JP H0419301B2 JP 60294415 A JP60294415 A JP 60294415A JP 29441585 A JP29441585 A JP 29441585A JP H0419301 B2 JPH0419301 B2 JP H0419301B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- thin film
- vacuum
- film forming
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 28
- 238000004544 sputter deposition Methods 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、薄膜形成装置に係り、特に半導体
装置を製造する製造工程において、半導体ウエハ
表面に薄膜を形成する作業に使用するスパツタリ
ング装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a thin film forming apparatus, and particularly to a sputtering apparatus used for forming a thin film on the surface of a semiconductor wafer in a manufacturing process for manufacturing semiconductor devices. It is.
第２図は、この種従来の薄膜形成装置であるス
パツタリング装置の一例を示す断面図であり、図
において１は真空槽、２は被薄膜形成体としての
半導体ウエハ、３ａは油回転ポンプ、４ａはクラ
イオポンプ、５は真空槽１内の真空圧を計測する
為の真空圧センサー、６は半導体ウエハ２上に形
成される薄膜形成材料であるターゲツト、７はス
パツタリング電源である。
FIG. 2 is a sectional view showing an example of a sputtering apparatus, which is a conventional thin film forming apparatus of this type, and in the figure, 1 is a vacuum chamber, 2 is a semiconductor wafer as a thin film forming object, 3a is an oil rotary pump, and 4a is a sputtering apparatus. 5 is a cryopump, 5 is a vacuum pressure sensor for measuring the vacuum pressure in the vacuum chamber 1, 6 is a target which is a thin film forming material to be formed on the semiconductor wafer 2, and 7 is a sputtering power source.
次に動作について説明する。 Next, the operation will be explained.
真空槽１を大気圧に開放した後、薄膜形成面を
上にして半導体ウエハ２を真空槽１内の定位置に
置いた後、油回転ポンプ３ａ、およびクライオポ
ンプ４ａを用いて、真空槽１を高真空まで真空排
気する。次いで、高純度のアルゴンガスを真空槽
１に導入し、真空圧センサー５および真空圧コン
トローラ７を使用して、真空槽１内を一定の真空
圧にする。次いで、スパツタリング電源７の出力
をターゲツト６に印加することにより、スパツタ
リング作用を起こし、ターゲツト６の材料を半導
体ウエハ２上に推積させる。 After opening the vacuum chamber 1 to atmospheric pressure, and placing the semiconductor wafer 2 in a fixed position in the vacuum chamber 1 with the thin film forming side facing up, the vacuum chamber 1 is opened using the oil rotary pump 3a and the cryopump 4a. Evacuate to high vacuum. Next, high-purity argon gas is introduced into the vacuum chamber 1, and the vacuum pressure sensor 5 and the vacuum pressure controller 7 are used to maintain a constant vacuum pressure inside the vacuum chamber 1. Next, by applying the output of the sputtering power source 7 to the target 6, a sputtering effect is caused, and the material of the target 6 is deposited on the semiconductor wafer 2.
従来の薄膜形成装置は以上のように、スパツタ
リング中の真空圧のみを検知している為、真空槽
１のリーク等により真空槽１内が高純度アルゴン
ガス以外のガスで汚染されても検知できず、品質
の悪い薄膜を半導体ウエハ２表面に形成する場合
があるなどの問題点があつた。
As described above, conventional thin film forming equipment detects only the vacuum pressure during sputtering, so it cannot detect if the inside of the vacuum chamber 1 is contaminated with gas other than high-purity argon gas due to a leak in the vacuum chamber 1. First, there are problems in that a thin film of poor quality may be formed on the surface of the semiconductor wafer 2.
この発明は上記のような問題点を解消するため
になされたもので、高品質の薄膜が形成できる薄
膜形成装置を得ることを目的とする。 This invention was made to solve the above-mentioned problems, and an object thereof is to obtain a thin film forming apparatus that can form a high quality thin film.
この発明に係る薄膜形成装置は、真空槽内のガ
スの成分を分析するガス成分分析装置を備えたも
のである。
A thin film forming apparatus according to the present invention is equipped with a gas component analyzer that analyzes the components of a gas within a vacuum chamber.
この発明における薄膜形成装置は、ガス成分分
析装置により、薄膜形成中の真空槽内のガス成分
を検知するから、上記真空槽内にあるべきガス以
外のガスが存在した場合には、薄膜形成作業を中
止できるものである。
The thin film forming apparatus according to the present invention uses a gas component analyzer to detect gas components in the vacuum chamber during thin film formation. can be canceled.
以下、この発明の一実施例を図について説明す
る。第１図において、８は、真空槽１内のガスの
成分を分析するガス成分分析装置で、このガス成
分分析装置は、真空槽１の排気口に取り付けられ
たクライオポンプ４ｂと、このクライオポンプ４
ｂと上記真空槽１との間の排気口に設けられ、上
記排気口径を調節することによつての真空槽１側
の真空圧とクライオポンプ４ｂ側の真空圧との差
を作る差圧発生器９と、この差圧発生器９とクラ
イオポンプ４ｂとの間の排気口内に含まれるガス
をセンスする質量分析器センサー１０と、この質
量分析器センサー１０のセンスに基づいてガスの
成分を分析する質量分析器１１と、上記クライオ
ポンプ４ｂに取り付けられた油回転ポンプ３ｂと
からなるものである。
An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, reference numeral 8 denotes a gas component analyzer for analyzing the gas components in the vacuum chamber 1. This gas component analyzer includes a cryopump 4b attached to the exhaust port of the vacuum chamber 1, and a cryopump 4
A differential pressure generating device is provided at the exhaust port between b and the vacuum chamber 1, and creates a difference between the vacuum pressure on the vacuum chamber 1 side and the vacuum pressure on the cryopump 4b side by adjusting the exhaust port diameter. a mass spectrometer sensor 10 that senses the gas contained in the exhaust port between the differential pressure generator 9 and the cryopump 4b, and analyzes the components of the gas based on the sense of the mass spectrometer sensor 10. The cryopump 4b includes a mass spectrometer 11, and an oil rotary pump 3b attached to the cryopump 4b.
次に作用、動作について説明する。 Next, the function and operation will be explained.
真空槽１を大気圧に開放した後、薄膜形成面を
上にして被薄膜形成体である半導体ウエハ２を真
空槽１内の定位置にセツトする。次いで、油回転
ポンプ３ａを用いて真空槽１を10-1Torr程度の
真空圧に真空排気する。次いで、クライオポンプ
４ａを用いて真空槽１を10-7Torr程度の真空圧
に真空排気する。次いで、純度99.999％程度の高
純度アワゴンガスを真空槽１に導入する。この
時、真空センサー５および真空圧コントローラ７
を使用して、高純度アルゴンガスの流入速度を制
御し、真空槽内を10-2Torr程度の真空圧に保持
する。次いで、スパツタリング電源の出力を薄膜
形成材料であるターゲツト６に印加して、ターゲ
ツト６表面近傍にプラズマを発生させ、ウエハ２
表面にターゲツト材料をデポさせる。このスパツ
タリング中のガス成分を、ガス成分分析装置８を
用いて常時検知する。通常の質量分析器１１は
10-5Torr程度以下の真空圧で動作するので、真
空圧が10-2Torr程度であるスパツタリング中の
ガス成分を検知する事はできない。そこで、本発
明例では、真空槽１に取り付けた質量分析器セン
サー１０を、クライオポンプ４ｂを用いて
10-5Torr以下の真空圧に保持させる。このとき、
真空槽１内の10-2Torr程度の真空圧と、質量分
析器センサー１０部の10-5Torr以下の真空圧と
の差圧が生じるのを可能とするために、差圧発生
器９を取り付けている。この為、スパツタリング
中の真空槽１内のガスの一部は排気口を通して常
時クライオポンプ４ｂに流れ込み、この排気口途
中に取り付けた質量分析器センサー１０で、スパ
ツタリング中の真空槽１内のガス成分を常時検知
することが可能となつた。 After the vacuum chamber 1 is opened to atmospheric pressure, the semiconductor wafer 2, which is the object on which the thin film is to be formed, is set at a fixed position in the vacuum chamber 1 with the thin film forming surface facing upward. Next, the vacuum chamber 1 is evacuated to a vacuum pressure of about 10 -1 Torr using the oil rotary pump 3a. Next, the vacuum chamber 1 is evacuated to a vacuum pressure of about 10 -7 Torr using the cryopump 4a. Next, high-purity wagon gas with a purity of about 99.999% is introduced into the vacuum chamber 1. At this time, the vacuum sensor 5 and the vacuum pressure controller 7
is used to control the inflow rate of high-purity argon gas and maintain the vacuum pressure in the vacuum chamber at approximately 10 -2 Torr. Next, the output of the sputtering power source is applied to the target 6, which is the thin film forming material, to generate plasma near the surface of the target 6, and the wafer 2
Deposit the target material onto the surface. Gas components during this sputtering are constantly detected using a gas component analyzer 8. The normal mass spectrometer 11 is
Since it operates at a vacuum pressure of about 10 -5 Torr or less, it cannot detect gas components during sputtering where the vacuum pressure is about 10 -2 Torr. Therefore, in the example of the present invention, the mass spectrometer sensor 10 attached to the vacuum chamber 1 is connected using a cryopump 4b.
Maintain vacuum pressure below 10 -5 Torr. At this time,
In order to generate a pressure difference between the vacuum pressure of about 10 -2 Torr in the vacuum chamber 1 and the vacuum pressure of less than 10 -5 Torr in the mass spectrometer sensor 10, a differential pressure generator 9 is installed. It is installed. For this reason, a part of the gas in the vacuum chamber 1 during sputtering constantly flows into the cryopump 4b through the exhaust port, and the mass spectrometer sensor 10 installed in the middle of this exhaust port detects the gas components in the vacuum chamber 1 during sputtering. It has become possible to constantly detect
その為、スパツタリング中に、高純度アルゴン
以外のガス成分が真空槽１内に流入した場合に
は、すぐに質量分析器１１に取り付けられた警報
器から警報を発し、スツタリング作業を中止す
る。この為、不純なガスが混入あるいは、不純な
ガスと反応した低品質の薄膜がウエハ上にデボさ
れる事はなくなつた。 Therefore, if a gas component other than high-purity argon flows into the vacuum chamber 1 during sputtering, an alarm attached to the mass spectrometer 11 immediately issues an alarm and the sputtering operation is stopped. Therefore, a low-quality thin film mixed with impure gas or reacted with impure gas is no longer deposited on the wafer.
なお、上記実施例では、高真空ポンプとしてク
ライオポンプ４ａ，４ｂを使用したが、ターボモ
レキユラーポンプや、油拡散ポンプ等の他の高真
空ポンプを使用してもよい。 In the above embodiment, cryopumps 4a and 4b were used as high vacuum pumps, but other high vacuum pumps such as turbo molecular pumps and oil diffusion pumps may be used.
また上記実施例では、真空槽１が１箇のスパツ
タリング装置について説明したが、複数の真空槽
を有したスパツタリング装置であつてもよい。 Further, in the above embodiments, the sputtering apparatus having one vacuum chamber 1 has been described, but the sputtering apparatus may have a plurality of vacuum chambers.
更に、上記実施例ではスパツタリング装置につ
いて説明したが、真空槽内で膜形成を行う装置で
あれば何でも良く、例えば真空蒸着装置等にこの
発明を適用しても同様の効果が得られるものであ
る。 Further, in the above embodiments, a sputtering device was described, but any device that forms a film in a vacuum chamber may be used. For example, the same effect can be obtained even if the present invention is applied to a vacuum evaporation device. .
また上記実施例では、ガス成分分析装置８とし
て、質量伏析器１１を利用したものを示したがこ
れに限られるものではなく、他のガス成分分析手
段であつても良い。 Furthermore, in the above embodiments, the gas component analyzer 8 uses the mass estimator 11, but the present invention is not limited to this, and other gas component analyzers may be used.
以上のように、この発明によれば、薄膜形成装
置に真空槽内のガスの成分を分析するガス成分分
析装置を設けて薄膜形成中のガス成分を常時検知
するようにしたので、高品質の薄膜がウエハ表面
上に、再現性よく形成できるという効果がある。
As described above, according to the present invention, the thin film forming apparatus is equipped with a gas component analyzer that analyzes the gas components in the vacuum chamber to constantly detect the gas components during thin film formation. This has the effect that a thin film can be formed on the wafer surface with good reproducibility.
第１図はこの発明の一実施例によるスパツタリ
ング装置を示す断面図、第２図は従来のスパツタ
リング装置を示す断面図である。
図に於て、１は真空槽、２は被薄膜形成体、８
はガス成分分析装置である。なお、図中、同一符
号は同一、又は相当部分を示す。
FIG. 1 is a sectional view showing a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional sputtering apparatus. In the figure, 1 is a vacuum chamber, 2 is a thin film forming body, and 8 is a vacuum chamber.
is a gas component analyzer. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
真空槽、この真空槽に設けられた差圧発生器と、
この差圧発生器に設けられたポンプと、上記差圧
発生器とポンプとの間に設けられた質量分析器セ
ンサと、この質量分析器センサに接続された質量
分析器とよりなるガス成分分析装置によつて、上
記真空槽内のガス成分を分析することを特徴とす
る薄膜形成装置。1. A vacuum chamber in which the thin film forming material and the thin film forming object are housed, a differential pressure generator provided in this vacuum chamber,
Gas component analysis consisting of a pump provided in this differential pressure generator, a mass spectrometer sensor provided between the differential pressure generator and the pump, and a mass spectrometer connected to this mass spectrometer sensor. A thin film forming apparatus characterized in that the apparatus analyzes gas components within the vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29441585A JPS62151562A (en) | 1985-12-26 | 1985-12-26 | Thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29441585A JPS62151562A (en) | 1985-12-26 | 1985-12-26 | Thin film forming device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62151562A JPS62151562A (en) | 1987-07-06 |
| JPH0419301B2 true JPH0419301B2 (en) | 1992-03-30 |
Family
ID=17807455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29441585A Granted JPS62151562A (en) | 1985-12-26 | 1985-12-26 | Thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62151562A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0841626A (en) * | 1994-07-28 | 1996-02-13 | Vacuum Metallurgical Co Ltd | Forming device for metallic partial film and its formation |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100257903B1 (en) * | 1997-12-30 | 2000-08-01 | 윤종용 | Plasma etching apparatus capable of in-situ monitoring, its in-situ monitoring method and in-situ cleaning method for removing residues in plasma etching chamber |
| JP4387573B2 (en) | 1999-10-26 | 2009-12-16 | 東京エレクトロン株式会社 | Process exhaust gas monitoring apparatus and method, semiconductor manufacturing apparatus, and semiconductor manufacturing apparatus management system and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5246920A (en) * | 1975-10-08 | 1977-04-14 | Suwa Seikosha Kk | Paper feeder |
| JPS5931550A (en) * | 1982-08-16 | 1984-02-20 | Ulvac Corp | Radical and excited particle measuring equipment during plasma etching |
-
1985
- 1985-12-26 JP JP29441585A patent/JPS62151562A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5246920A (en) * | 1975-10-08 | 1977-04-14 | Suwa Seikosha Kk | Paper feeder |
| JPS5931550A (en) * | 1982-08-16 | 1984-02-20 | Ulvac Corp | Radical and excited particle measuring equipment during plasma etching |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0841626A (en) * | 1994-07-28 | 1996-02-13 | Vacuum Metallurgical Co Ltd | Forming device for metallic partial film and its formation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62151562A (en) | 1987-07-06 |
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