JPS6227447B2 - - Google Patents
Info
- Publication number
- JPS6227447B2 JPS6227447B2 JP20453181A JP20453181A JPS6227447B2 JP S6227447 B2 JPS6227447 B2 JP S6227447B2 JP 20453181 A JP20453181 A JP 20453181A JP 20453181 A JP20453181 A JP 20453181A JP S6227447 B2 JPS6227447 B2 JP S6227447B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- gap
- hall element
- magnetic field
- hall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005355 Hall effect Effects 0.000 claims description 9
- 239000010408 film Substances 0.000 description 13
- 230000035945 sensitivity Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49589—Capacitor integral with or on the leadframe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/37—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using galvano-magnetic devices, e.g. Hall-effect devices using Hall or Hall-related effect, e.g. planar-Hall effect or pseudo-Hall effect
- G11B5/372—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using galvano-magnetic devices, e.g. Hall-effect devices using Hall or Hall-related effect, e.g. planar-Hall effect or pseudo-Hall effect in magnetic thin films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20453181A JPS58108028A (ja) | 1981-12-19 | 1981-12-19 | ホ−ル効果型再生用磁気ヘツド |
US06/448,564 US4577250A (en) | 1981-12-18 | 1982-12-10 | Hall effect magnetic head |
DE19823246282 DE3246282A1 (de) | 1981-12-18 | 1982-12-14 | Halleffekt-magnetkopf |
GB08235922A GB2115204B (en) | 1981-12-18 | 1982-12-17 | Hall effect magnetic head |
FR8221236A FR2518792B1 (fr) | 1981-12-18 | 1982-12-17 | Tete magnetique a effet hall |
FR868601114A FR2578343B1 (fr) | 1981-12-18 | 1986-01-27 | Tete magnetique a effet hall |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20453181A JPS58108028A (ja) | 1981-12-19 | 1981-12-19 | ホ−ル効果型再生用磁気ヘツド |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58108028A JPS58108028A (ja) | 1983-06-28 |
JPS6227447B2 true JPS6227447B2 (enrdf_load_stackoverflow) | 1987-06-15 |
Family
ID=16492076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20453181A Granted JPS58108028A (ja) | 1981-12-18 | 1981-12-19 | ホ−ル効果型再生用磁気ヘツド |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58108028A (enrdf_load_stackoverflow) |
-
1981
- 1981-12-19 JP JP20453181A patent/JPS58108028A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58108028A (ja) | 1983-06-28 |
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