JPS6227384B2 - - Google Patents
Info
- Publication number
- JPS6227384B2 JPS6227384B2 JP5207082A JP5207082A JPS6227384B2 JP S6227384 B2 JPS6227384 B2 JP S6227384B2 JP 5207082 A JP5207082 A JP 5207082A JP 5207082 A JP5207082 A JP 5207082A JP S6227384 B2 JPS6227384 B2 JP S6227384B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- chromium
- tungsten
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 30
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 25
- 238000000034 method Methods 0.000 description 22
- 229910052804 chromium Inorganic materials 0.000 description 20
- 239000011651 chromium Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 16
- 229910052721 tungsten Inorganic materials 0.000 description 16
- 239000010937 tungsten Substances 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57052070A JPS58169150A (ja) | 1982-03-30 | 1982-03-30 | フオトマスクの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57052070A JPS58169150A (ja) | 1982-03-30 | 1982-03-30 | フオトマスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58169150A JPS58169150A (ja) | 1983-10-05 |
| JPS6227384B2 true JPS6227384B2 (de) | 1987-06-15 |
Family
ID=12904554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57052070A Granted JPS58169150A (ja) | 1982-03-30 | 1982-03-30 | フオトマスクの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58169150A (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019066312A (ja) | 2017-09-29 | 2019-04-25 | ミネベアミツミ株式会社 | ひずみゲージ |
| JP2019066453A (ja) | 2017-09-29 | 2019-04-25 | ミネベアミツミ株式会社 | ひずみゲージ |
| JP2019066454A (ja) | 2017-09-29 | 2019-04-25 | ミネベアミツミ株式会社 | ひずみゲージ、センサモジュール |
| JP6793103B2 (ja) | 2017-09-29 | 2020-12-02 | ミネベアミツミ株式会社 | ひずみゲージ |
| JP2019113411A (ja) | 2017-12-22 | 2019-07-11 | ミネベアミツミ株式会社 | ひずみゲージ、センサモジュール |
| JP2019184344A (ja) * | 2018-04-05 | 2019-10-24 | ミネベアミツミ株式会社 | ひずみゲージ及びその製造方法 |
| EP3855148A4 (de) | 2018-10-23 | 2022-10-26 | Minebea Mitsumi Inc. | Beschleunigerpedal, lenkvorrichtung , 6-achsen-sensor, motor, stossfänger und dergleichen |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50109672A (de) * | 1974-02-02 | 1975-08-28 | ||
| JPS53108285A (en) * | 1977-03-03 | 1978-09-20 | Hattori Isao | Photomask original plate |
-
1982
- 1982-03-30 JP JP57052070A patent/JPS58169150A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50109672A (de) * | 1974-02-02 | 1975-08-28 | ||
| JPS53108285A (en) * | 1977-03-03 | 1978-09-20 | Hattori Isao | Photomask original plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58169150A (ja) | 1983-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4202914A (en) | Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask | |
| EP0020776B1 (de) | Verfahren zum formen von mustern | |
| US4576678A (en) | Pattern forming method | |
| DE60106229T2 (de) | Ozon-verstärktes silylierungsverfahren zur erhöhung des ätzwiderstands von dünnen resistschichten | |
| JPS61194834A (ja) | ポリシリコンのエツチング方法 | |
| JP2000075466A (ja) | ハーフトーンマスクの製造方法 | |
| US4496419A (en) | Fine line patterning method for submicron devices | |
| US5487811A (en) | Process for preparation of semiconductor device | |
| US6989219B2 (en) | Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks | |
| JPS6227384B2 (de) | ||
| US5064748A (en) | Method for anisotropically hardening a protective coating for integrated circuit manufacture | |
| JPH0466345B2 (de) | ||
| US4826754A (en) | Method for anisotropically hardening a protective coating for integrated circuit manufacture | |
| JPH08227873A (ja) | 半導体装置の製造方法 | |
| JP2003059907A (ja) | 反射防止膜のエッチング方法 | |
| JPH0243171B2 (de) | ||
| JPH0366656B2 (de) | ||
| JP2702189B2 (ja) | Ｅｃｒプラズマエッチング法 | |
| KR930008841B1 (ko) | 반도체 제조중 콘택트홀의 형성방법 | |
| JPS56277A (en) | Forming method of metal layer pattern | |
| KR0172856B1 (ko) | 미세패턴 형성방법 | |
| JPH0555218A (ja) | 半導体装置及びその製造方法 | |
| JPH05303210A (ja) | パターン形成方法 | |
| JPH0561185A (ja) | フオトマスク | |
| JPS63249837A (ja) | レジストマスクの形成方法 |