JPS6227039B2 - - Google Patents

Info

Publication number
JPS6227039B2
JPS6227039B2 JP58194669A JP19466983A JPS6227039B2 JP S6227039 B2 JPS6227039 B2 JP S6227039B2 JP 58194669 A JP58194669 A JP 58194669A JP 19466983 A JP19466983 A JP 19466983A JP S6227039 B2 JPS6227039 B2 JP S6227039B2
Authority
JP
Japan
Prior art keywords
diamond
substrate
plasma
gas
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58194669A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6086096A (ja
Inventor
Seiichiro Matsumoto
Yoichiro Sato
Mutsukazu Kamo
Nobuo Sedaka
Noritoshi Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Original Assignee
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO filed Critical KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority to JP58194669A priority Critical patent/JPS6086096A/ja
Publication of JPS6086096A publication Critical patent/JPS6086096A/ja
Publication of JPS6227039B2 publication Critical patent/JPS6227039B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP58194669A 1983-10-18 1983-10-18 膜状ダイヤモンドの析出法 Granted JPS6086096A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58194669A JPS6086096A (ja) 1983-10-18 1983-10-18 膜状ダイヤモンドの析出法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58194669A JPS6086096A (ja) 1983-10-18 1983-10-18 膜状ダイヤモンドの析出法

Publications (2)

Publication Number Publication Date
JPS6086096A JPS6086096A (ja) 1985-05-15
JPS6227039B2 true JPS6227039B2 (enrdf_load_stackoverflow) 1987-06-11

Family

ID=16328333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58194669A Granted JPS6086096A (ja) 1983-10-18 1983-10-18 膜状ダイヤモンドの析出法

Country Status (1)

Country Link
JP (1) JPS6086096A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990015787A1 (en) * 1989-06-15 1990-12-27 Idemitsu Petrochemical Company Limited Diamond-coated member

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200897A (ja) * 1984-03-26 1985-10-11 Mitsubishi Metal Corp 人工ダイヤモンド皮膜の析出形成方法
JPS60201877A (ja) * 1984-03-28 1985-10-12 Mitsubishi Metal Corp 析出生成人工ダイヤモンド粒で構成されたダイヤモンド研磨砥石
JPS61163276A (ja) * 1985-01-09 1986-07-23 Showa Denko Kk Cvd法ダイヤモンド合成に使用する基板の処理法
JPS61270372A (ja) * 1985-05-23 1986-11-29 Mitsubishi Metal Corp 人工ダイヤモンド皮膜の析出形成方法
JPH0717479B2 (ja) * 1985-12-09 1995-03-01 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0643280B2 (ja) * 1986-03-27 1994-06-08 東芝タンガロイ株式会社 膜状ダイヤモンドの気相合成法
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JP2670442B2 (ja) * 1986-03-31 1997-10-29 キヤノン株式会社 結晶の形成方法
JPH02141494A (ja) * 1988-07-30 1990-05-30 Kobe Steel Ltd ダイヤモンド気相合成装置
DE69018243T2 (de) * 1989-09-22 1995-07-27 Showa Denko Kk Verfahren zur herstellung von diamant mittels dampfniederschlag auf elektrochemisch behandeltem substrat.
US5704976A (en) * 1990-07-06 1998-01-06 The United States Of America As Represented By The Secretary Of The Navy High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma
US6660329B2 (en) 2001-09-05 2003-12-09 Kennametal Inc. Method for making diamond coated cutting tool

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990015787A1 (en) * 1989-06-15 1990-12-27 Idemitsu Petrochemical Company Limited Diamond-coated member

Also Published As

Publication number Publication date
JPS6086096A (ja) 1985-05-15

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