JPS6227039B2 - - Google Patents
Info
- Publication number
- JPS6227039B2 JPS6227039B2 JP58194669A JP19466983A JPS6227039B2 JP S6227039 B2 JPS6227039 B2 JP S6227039B2 JP 58194669 A JP58194669 A JP 58194669A JP 19466983 A JP19466983 A JP 19466983A JP S6227039 B2 JPS6227039 B2 JP S6227039B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- plasma
- gas
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910003460 diamond Inorganic materials 0.000 claims description 44
- 239000010432 diamond Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 229930195733 hydrocarbon Natural products 0.000 claims description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001308 synthesis method Methods 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- 229940099259 vaseline Drugs 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58194669A JPS6086096A (ja) | 1983-10-18 | 1983-10-18 | 膜状ダイヤモンドの析出法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58194669A JPS6086096A (ja) | 1983-10-18 | 1983-10-18 | 膜状ダイヤモンドの析出法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6086096A JPS6086096A (ja) | 1985-05-15 |
JPS6227039B2 true JPS6227039B2 (enrdf_load_stackoverflow) | 1987-06-11 |
Family
ID=16328333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58194669A Granted JPS6086096A (ja) | 1983-10-18 | 1983-10-18 | 膜状ダイヤモンドの析出法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6086096A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990015787A1 (en) * | 1989-06-15 | 1990-12-27 | Idemitsu Petrochemical Company Limited | Diamond-coated member |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60200897A (ja) * | 1984-03-26 | 1985-10-11 | Mitsubishi Metal Corp | 人工ダイヤモンド皮膜の析出形成方法 |
JPS60201877A (ja) * | 1984-03-28 | 1985-10-12 | Mitsubishi Metal Corp | 析出生成人工ダイヤモンド粒で構成されたダイヤモンド研磨砥石 |
JPS61163276A (ja) * | 1985-01-09 | 1986-07-23 | Showa Denko Kk | Cvd法ダイヤモンド合成に使用する基板の処理法 |
JPS61270372A (ja) * | 1985-05-23 | 1986-11-29 | Mitsubishi Metal Corp | 人工ダイヤモンド皮膜の析出形成方法 |
JPH0717479B2 (ja) * | 1985-12-09 | 1995-03-01 | 京セラ株式会社 | ダイヤモンド膜の製造方法 |
JPH0643280B2 (ja) * | 1986-03-27 | 1994-06-08 | 東芝タンガロイ株式会社 | 膜状ダイヤモンドの気相合成法 |
JPH0782996B2 (ja) * | 1986-03-28 | 1995-09-06 | キヤノン株式会社 | 結晶の形成方法 |
JP2670442B2 (ja) * | 1986-03-31 | 1997-10-29 | キヤノン株式会社 | 結晶の形成方法 |
JPH02141494A (ja) * | 1988-07-30 | 1990-05-30 | Kobe Steel Ltd | ダイヤモンド気相合成装置 |
DE69018243T2 (de) * | 1989-09-22 | 1995-07-27 | Showa Denko Kk | Verfahren zur herstellung von diamant mittels dampfniederschlag auf elektrochemisch behandeltem substrat. |
US5704976A (en) * | 1990-07-06 | 1998-01-06 | The United States Of America As Represented By The Secretary Of The Navy | High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma |
US6660329B2 (en) | 2001-09-05 | 2003-12-09 | Kennametal Inc. | Method for making diamond coated cutting tool |
-
1983
- 1983-10-18 JP JP58194669A patent/JPS6086096A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990015787A1 (en) * | 1989-06-15 | 1990-12-27 | Idemitsu Petrochemical Company Limited | Diamond-coated member |
Also Published As
Publication number | Publication date |
---|---|
JPS6086096A (ja) | 1985-05-15 |
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