JPS62266833A - Fine processing - Google Patents

Abstract

PURPOSE:To form an inclination at an opening entrance part with high accuracy by etching a semiconductor substrate and a resist comprising a recess corresponding to the opening and covering the opening, at the same time by plasma etching. CONSTITUTION:A resist 1 is spread over a semiconductor substrate 2 in a manner it forms a recess corresponding to an opening of the substrate. At this time, a thickness of the resist 1 becomes thinner at an entrance part of the opening. Next, plasma etching is performed under the conditions that the semiconductor substrate 2 and the resist 1 are etched simultaneously. After the etching, the resist 1 is removed to obtain an inclination at the opening entrance part. By this method, the inclination can be formed with high accuracy and equipments regarding an etchant becomes unnecessary.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a microfabrication method for forming an inclination in the opening of a hole formed in a semiconductor substrate.

[Conventional technology]

Conventionally, as a method of forming a slope in an opening, a method has been used in which patterning is performed using a resist and then wet etching is performed. FIG. 2 is a process diagram showing this conventional method. In the figure, ■ is a resist, and 2 is a semiconductor substrate.

Next, this method will be explained. First, the resist 1 coated on the semiconductor substrate 2 is patterned (see Fig. 2).
a)). Next, wet etching is performed using an etching solution to create a slope. Since wet etching is isotropic, the shape is as shown in FIG. 2('b). After this, R.I.
Perform anisotropic etching using E (Reactive Ion Etch) to complete the etching (see Figure 2 (
C)). After etching is completed, the resist is peeled off (FIG. 2(d)).

[Problem that the invention seeks to solve]

Since the conventional method uses wet etching, there is a problem that if the adhesion between the resist and the substrate is poor, the sloped portion becomes too large due to penetration of the etching solution.

This invention was made to solve the above-mentioned conventional problems, and aims to provide a microfabrication method that can form a slope at the opening of a hole without using a wet niche. .

[Means for solving problems]

In the microfabrication method according to the present invention, a resist is applied on a semiconductor substrate to cover the liquid hole so as to have a recess corresponding to the hole formed in the substrate, and the resist and the semiconductor substrate are simultaneously plasma etched to form the hole. The opening is sloped.

[Effect]

In this invention, when a resist is applied to cover a liquid hole on a semiconductor substrate so that a recess corresponding to the hole formed in the substrate exists, the resist film thickness becomes thinner at the opening of the liquid hole. By performing plasma etching on the semiconductor substrate at the same time, the semiconductor substrate in the opening is etched away together with the resist, making it possible to form a slope in the opening.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a diagram showing the process order of a microfabrication method according to an embodiment of the present invention. In the figure, 1 is a resist, and 2 is a semiconductor substrate.

Next, the method of this embodiment will be explained. First, RT E
After forming a hole by anisotropic etching using (Reactive Ion Etch) (Figure 1(a))
, resist 1 is removed. Then, as shown in FIG. 1(b), a resist 1 is applied on the semiconductor substrate 2 to cover the hole so as to have a recess corresponding to the hole. At this time, the film thickness of the resist 1 becomes thinner at the opening of the hole. Next, as shown in FIG. 1C, etching is performed under conditions such that the semiconductor substrate 2 and the resist 1 are simultaneously etched by plasma.

After etching is completed, the resist 1 is removed to obtain a shape as shown in FIG. 1(d).

As described above, in the method of this embodiment, since the slope is formed at the opening of the hole by plasma etching, the slope can be formed more accurately than the conventional wet etching method, and equipment related to etching solution is not required.

In the above embodiment, a resist was applied, but SOG (spin on glass) may be applied instead of this resist.

〔Effect of the invention〕

As described above, according to the photovoltaic device manufacturing apparatus of the present invention, a resist is applied to the semiconductor substrate so as to cover the liquid hole so as to have a concave portion corresponding to the hole formed in the substrate, and the resist is applied to the semiconductor substrate together with the resist. Since the slope is formed in the opening by plasma etching, the slope can be formed more accurately than the conventional wet etching method, and there is also an effect that equipment related to etching liquid is not required.

[Brief explanation of drawings]

FIG. 1 is a process diagram showing a microfabrication method according to an embodiment of the present invention, and FIG. 2 is a process diagram showing a conventional method. In the figure, 1 is a resist, and 2 is a semiconductor substrate. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) In a method of forming a slope at the opening of a hole formed in a semiconductor substrate, a resist is applied to cover the hole so as to have a recess corresponding to the hole on the semiconductor substrate, and the resist and the semiconductor substrate are bonded. A microfabrication method characterized by etching simultaneously to form a slope at the opening of the hole.