JPS622657A - 半導体装置の製造方法 - Google Patents

Info

Publication number

JPS622657A

JPS622657A JP60143206A JP14320685A JPS622657A JP S622657 A JPS622657 A JP S622657A JP 60143206 A JP60143206 A JP 60143206A JP 14320685 A JP14320685 A JP 14320685A JP S622657 A JPS622657 A JP S622657A

Authority

JP

Japan

Prior art keywords

region

film

base

emitter

oxide film

Prior art date

1985-06-28

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

• Espacenet
• Global Dossier
• Discuss

• 239000004065 semiconductor Substances 0.000 title claims abstract description 38
• 238000004519 manufacturing process Methods 0.000 title claims description 19
• 238000000034 method Methods 0.000 claims abstract description 29
• 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
• 239000010703 silicon Substances 0.000 claims abstract description 26
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
• 150000004767 nitrides Chemical class 0.000 claims abstract description 24
• 238000005530 etching Methods 0.000 claims abstract description 8
• 239000012535 impurity Substances 0.000 claims description 25
• 239000000758 substrate Substances 0.000 claims description 20
• 230000003647 oxidation Effects 0.000 claims description 16
• 238000007254 oxidation reaction Methods 0.000 claims description 16
• 238000000926 separation method Methods 0.000 claims description 4
• 238000010438 heat treatment Methods 0.000 claims description 2
• 230000001590 oxidative effect Effects 0.000 claims 1
• 230000000149 penetrating effect Effects 0.000 claims 1
• 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 32
• 229920005591 polysilicon Polymers 0.000 abstract description 32
• 229910052751 metal Inorganic materials 0.000 abstract description 9
• 239000002184 metal Substances 0.000 abstract description 9
• 238000000605 extraction Methods 0.000 description 15
• 238000009792 diffusion process Methods 0.000 description 12
• 238000002955 isolation Methods 0.000 description 12
• 230000003321 amplification Effects 0.000 description 10
• 238000003199 nucleic acid amplification method Methods 0.000 description 10
• 238000010586 diagram Methods 0.000 description 8
• 238000007796 conventional method Methods 0.000 description 7
• 238000005468 ion implantation Methods 0.000 description 7
• 229920002120 photoresistant polymer Polymers 0.000 description 7
• 238000000137 annealing Methods 0.000 description 4
• 229910021332 silicide Inorganic materials 0.000 description 4
• FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
• 238000010521 absorption reaction Methods 0.000 description 3
• 238000000059 patterning Methods 0.000 description 3
• 238000005215 recombination Methods 0.000 description 3
• 230000006798 recombination Effects 0.000 description 3
• KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
• 230000015572 biosynthetic process Effects 0.000 description 2
• 238000002161 passivation Methods 0.000 description 2
• 150000003376 silicon Chemical class 0.000 description 2
• ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
• 229910052782 aluminium Inorganic materials 0.000 description 1
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
• 229910052785 arsenic Inorganic materials 0.000 description 1
• RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
• 229910052796 boron Inorganic materials 0.000 description 1
• 238000006243 chemical reaction Methods 0.000 description 1
• 239000003795 chemical substances by application Substances 0.000 description 1
• 239000013078 crystal Substances 0.000 description 1
• 230000001419 dependent effect Effects 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 230000008030 elimination Effects 0.000 description 1
• 238000003379 elimination reaction Methods 0.000 description 1
• 239000011521 glass Substances 0.000 description 1
• 150000002500 ions Chemical class 0.000 description 1
• 239000012528 membrane Substances 0.000 description 1
• 239000008267 milk Substances 0.000 description 1
• 210000004080 milk Anatomy 0.000 description 1
• 235000013336 milk Nutrition 0.000 description 1
• 229910052763 palladium Inorganic materials 0.000 description 1
• 229910052698 phosphorus Inorganic materials 0.000 description 1
• 239000011574 phosphorus Substances 0.000 description 1
• 238000001259 photo etching Methods 0.000 description 1
• 229910021339 platinum silicide Inorganic materials 0.000 description 1
• 230000002747 voluntary effect Effects 0.000 description 1