JPS6226174B2 - - Google Patents

Info

Publication number
JPS6226174B2
JPS6226174B2 JP57059612A JP5961282A JPS6226174B2 JP S6226174 B2 JPS6226174 B2 JP S6226174B2 JP 57059612 A JP57059612 A JP 57059612A JP 5961282 A JP5961282 A JP 5961282A JP S6226174 B2 JPS6226174 B2 JP S6226174B2
Authority
JP
Japan
Prior art keywords
film
pattern
layer
silicone resin
graft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57059612A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58176938A (ja
Inventor
Toshiaki Tamamura
Saburo Imamura
Masao Morita
Osamu Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57059612A priority Critical patent/JPS58176938A/ja
Priority to EP83103348A priority patent/EP0091651B1/en
Priority to DE8383103348T priority patent/DE3377597D1/de
Priority to US06/482,613 priority patent/US4426247A/en
Publication of JPS58176938A publication Critical patent/JPS58176938A/ja
Publication of JPS6226174B2 publication Critical patent/JPS6226174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP57059612A 1982-04-12 1982-04-12 微細パタ−ン形成法 Granted JPS58176938A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57059612A JPS58176938A (ja) 1982-04-12 1982-04-12 微細パタ−ン形成法
EP83103348A EP0091651B1 (en) 1982-04-12 1983-04-06 Method for forming micropattern
DE8383103348T DE3377597D1 (en) 1982-04-12 1983-04-06 Method for forming micropattern
US06/482,613 US4426247A (en) 1982-04-12 1983-04-06 Method for forming micropattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57059612A JPS58176938A (ja) 1982-04-12 1982-04-12 微細パタ−ン形成法

Publications (2)

Publication Number Publication Date
JPS58176938A JPS58176938A (ja) 1983-10-17
JPS6226174B2 true JPS6226174B2 (en:Method) 1987-06-08

Family

ID=13118240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57059612A Granted JPS58176938A (ja) 1982-04-12 1982-04-12 微細パタ−ン形成法

Country Status (1)

Country Link
JP (1) JPS58176938A (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123232A (ja) * 1987-11-09 1989-05-16 Mitsubishi Electric Corp パターン形成方法
DE3937308C1 (en:Method) * 1989-11-09 1991-03-21 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De
US7952106B2 (en) 2009-04-10 2011-05-31 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution and method for forming the same

Also Published As

Publication number Publication date
JPS58176938A (ja) 1983-10-17

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