JPS62256804A - レジスト材料 - Google Patents

レジスト材料

Info

Publication number
JPS62256804A
JPS62256804A JP10136786A JP10136786A JPS62256804A JP S62256804 A JPS62256804 A JP S62256804A JP 10136786 A JP10136786 A JP 10136786A JP 10136786 A JP10136786 A JP 10136786A JP S62256804 A JPS62256804 A JP S62256804A
Authority
JP
Japan
Prior art keywords
resist
formula
pattern
layer
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10136786A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0535864B2 (enrdf_load_stackoverflow
Inventor
Kazuhide Saigo
斎郷　和秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP10136786A priority Critical patent/JPS62256804A/ja
Publication of JPS62256804A publication Critical patent/JPS62256804A/ja
Publication of JPH0535864B2 publication Critical patent/JPH0535864B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Formation Of Insulating Films (AREA)
JP10136786A 1986-04-30 1986-04-30 レジスト材料 Granted JPS62256804A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10136786A JPS62256804A (ja) 1986-04-30 1986-04-30 レジスト材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10136786A JPS62256804A (ja) 1986-04-30 1986-04-30 レジスト材料

Publications (2)

Publication Number Publication Date
JPS62256804A true JPS62256804A (ja) 1987-11-09
JPH0535864B2 JPH0535864B2 (enrdf_load_stackoverflow) 1993-05-27

Family

ID=14298852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10136786A Granted JPS62256804A (ja) 1986-04-30 1986-04-30 レジスト材料

Country Status (1)

Country Link
JP (1) JPS62256804A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01142720A (ja) * 1987-11-30 1989-06-05 Toray Silicone Co Ltd 高エネルギー線硬化性組成物およびレジスト組成物
US5008362A (en) * 1988-04-02 1991-04-16 Hoechst Aktiengesellschaft Binders soluble in aqueous alkali and containing silanyl groups in the side chain, process for preparing same and also photosensitive mixture containing these compounds
US5194364A (en) * 1988-03-16 1993-03-16 Fujitsu Limited Process for formation of resist patterns
US5206111A (en) * 1988-04-02 1993-04-27 Hoechst Aktiengesellschaft Binders soluble in aqueous alkali and containing silanyl groups in the side chain for a photosensitive mixture
WO2007026010A3 (en) * 2005-09-01 2007-06-14 Freescale Semiconductor Inc Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US7803719B2 (en) 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01142720A (ja) * 1987-11-30 1989-06-05 Toray Silicone Co Ltd 高エネルギー線硬化性組成物およびレジスト組成物
US5194364A (en) * 1988-03-16 1993-03-16 Fujitsu Limited Process for formation of resist patterns
US5008362A (en) * 1988-04-02 1991-04-16 Hoechst Aktiengesellschaft Binders soluble in aqueous alkali and containing silanyl groups in the side chain, process for preparing same and also photosensitive mixture containing these compounds
US5206111A (en) * 1988-04-02 1993-04-27 Hoechst Aktiengesellschaft Binders soluble in aqueous alkali and containing silanyl groups in the side chain for a photosensitive mixture
WO2007026010A3 (en) * 2005-09-01 2007-06-14 Freescale Semiconductor Inc Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US7691756B2 (en) 2005-09-01 2010-04-06 Nxp B.V. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US7951729B2 (en) 2005-09-01 2011-05-31 Nxp B.V. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereor, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US7803719B2 (en) 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device

Also Published As

Publication number Publication date
JPH0535864B2 (enrdf_load_stackoverflow) 1993-05-27

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