JPS6225474A - 超伝導配線間絶縁膜の形成方法 - Google Patents

超伝導配線間絶縁膜の形成方法

Info

Publication number
JPS6225474A
JPS6225474A JP60163888A JP16388885A JPS6225474A JP S6225474 A JPS6225474 A JP S6225474A JP 60163888 A JP60163888 A JP 60163888A JP 16388885 A JP16388885 A JP 16388885A JP S6225474 A JPS6225474 A JP S6225474A
Authority
JP
Japan
Prior art keywords
film
superconducting
silica
insulating film
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60163888A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0513397B2 (cs
Inventor
Shuichi Tawara
修一 田原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60163888A priority Critical patent/JPS6225474A/ja
Publication of JPS6225474A publication Critical patent/JPS6225474A/ja
Publication of JPH0513397B2 publication Critical patent/JPH0513397B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H01L39/24—

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP60163888A 1985-07-26 1985-07-26 超伝導配線間絶縁膜の形成方法 Granted JPS6225474A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60163888A JPS6225474A (ja) 1985-07-26 1985-07-26 超伝導配線間絶縁膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60163888A JPS6225474A (ja) 1985-07-26 1985-07-26 超伝導配線間絶縁膜の形成方法

Publications (2)

Publication Number Publication Date
JPS6225474A true JPS6225474A (ja) 1987-02-03
JPH0513397B2 JPH0513397B2 (cs) 1993-02-22

Family

ID=15782704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60163888A Granted JPS6225474A (ja) 1985-07-26 1985-07-26 超伝導配線間絶縁膜の形成方法

Country Status (1)

Country Link
JP (1) JPS6225474A (cs)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105339A (ja) * 1982-12-08 1984-06-18 Nec Corp 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105339A (ja) * 1982-12-08 1984-06-18 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0513397B2 (cs) 1993-02-22

Similar Documents

Publication Publication Date Title
JPS61180458A (ja) 半導体装置の製造方法
WO1987002828A1 (en) Glass intermetal dielectric
JPS6225474A (ja) 超伝導配線間絶縁膜の形成方法
JPS62277750A (ja) 多層配線の形成方法
JPH0330992B2 (cs)
JPS61196555A (ja) 多層配線の形成方法
JPH0513396B2 (cs)
JPH0586661B2 (cs)
JPH0334675B2 (cs)
JP2535539B2 (ja) ジョセフソン回路の製造方法
JP2621287B2 (ja) 多層配線層の形成方法
JP2991388B2 (ja) 半導体装置の製造方法
JPS61144083A (ja) ジヨセフソン接合素子の形成方法
JPH0319222A (ja) 半導体装置の製造方法
KR930011896B1 (ko) 반도체 장치의 다층 배선방법
JPS6037150A (ja) 半導体装置の製造方法
JPH058596B2 (cs)
JPS5826659B2 (ja) 半導体装置の電極形成法
JPS61256743A (ja) 半導体装置の製造方法
JPS639660B2 (cs)
JPS62115744A (ja) 半導体装置
JPS61191048A (ja) 半導体装置の製造方法
JPH0488634A (ja) 薄膜配線の形成方法
JPH0226054A (ja) 半導体装置の製造方法
JPH0519993B2 (cs)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term