JPS62252970A - トンネル注入制御サイリスタ - Google Patents

トンネル注入制御サイリスタ

Info

Publication number
JPS62252970A
JPS62252970A JP62095846A JP9584687A JPS62252970A JP S62252970 A JPS62252970 A JP S62252970A JP 62095846 A JP62095846 A JP 62095846A JP 9584687 A JP9584687 A JP 9584687A JP S62252970 A JPS62252970 A JP S62252970A
Authority
JP
Japan
Prior art keywords
region
gate
conductivity type
cathode
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62095846A
Other languages
English (en)
Japanese (ja)
Other versions
JPH036672B2 (enExample
Inventor
Junichi Nishizawa
潤一 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP62095846A priority Critical patent/JPS62252970A/ja
Publication of JPS62252970A publication Critical patent/JPS62252970A/ja
Publication of JPH036672B2 publication Critical patent/JPH036672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Thyristors (AREA)
JP62095846A 1987-04-18 1987-04-18 トンネル注入制御サイリスタ Granted JPS62252970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62095846A JPS62252970A (ja) 1987-04-18 1987-04-18 トンネル注入制御サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62095846A JPS62252970A (ja) 1987-04-18 1987-04-18 トンネル注入制御サイリスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55151849A Division JPS5775464A (en) 1980-10-28 1980-10-28 Semiconductor device controlled by tunnel injection

Publications (2)

Publication Number Publication Date
JPS62252970A true JPS62252970A (ja) 1987-11-04
JPH036672B2 JPH036672B2 (enExample) 1991-01-30

Family

ID=14148738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62095846A Granted JPS62252970A (ja) 1987-04-18 1987-04-18 トンネル注入制御サイリスタ

Country Status (1)

Country Link
JP (1) JPS62252970A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357769A (en) * 1976-11-04 1978-05-25 Mitsubishi Electric Corp Electrostatic induction transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357769A (en) * 1976-11-04 1978-05-25 Mitsubishi Electric Corp Electrostatic induction transistor

Also Published As

Publication number Publication date
JPH036672B2 (enExample) 1991-01-30

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