JPS6225275B2 - - Google Patents
Info
- Publication number
- JPS6225275B2 JPS6225275B2 JP54170717A JP17071779A JPS6225275B2 JP S6225275 B2 JPS6225275 B2 JP S6225275B2 JP 54170717 A JP54170717 A JP 54170717A JP 17071779 A JP17071779 A JP 17071779A JP S6225275 B2 JPS6225275 B2 JP S6225275B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- thin film
- layer
- solar cell
- sixge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17071779A JPS5694674A (en) | 1979-12-27 | 1979-12-27 | Thin-film solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17071779A JPS5694674A (en) | 1979-12-27 | 1979-12-27 | Thin-film solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5694674A JPS5694674A (en) | 1981-07-31 |
JPS6225275B2 true JPS6225275B2 (US07655688-20100202-C00086.png) | 1987-06-02 |
Family
ID=15910083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17071779A Granted JPS5694674A (en) | 1979-12-27 | 1979-12-27 | Thin-film solar cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5694674A (US07655688-20100202-C00086.png) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
JPS58139478A (ja) * | 1982-02-15 | 1983-08-18 | Agency Of Ind Science & Technol | アモルフアス太陽電池 |
JPS5990959A (ja) * | 1982-11-16 | 1984-05-25 | Sanyo Electric Co Ltd | アモルフアスシリコン電界効果型トランジスタ |
JPS61232685A (ja) * | 1985-04-09 | 1986-10-16 | Agency Of Ind Science & Technol | アモルフアスシリコン太陽電池およびその製造方法 |
JPS6249672A (ja) * | 1985-08-29 | 1987-03-04 | Sumitomo Electric Ind Ltd | アモルフアス光起電力素子 |
JPS62165374A (ja) * | 1986-01-16 | 1987-07-21 | Sumitomo Electric Ind Ltd | アモルフアス光起電力素子 |
US20100059119A1 (en) * | 2008-09-09 | 2010-03-11 | Electronics And Telecommunications Research Institute | Solar cell and method of manufacturing the same |
-
1979
- 1979-12-27 JP JP17071779A patent/JPS5694674A/ja active Granted
Non-Patent Citations (2)
Title |
---|
2ND E.C.PHOTOVOLTAIC SOLAR ENERGY CONFERENCE=1979 * |
JOURNAL OF APPLIED PHYSICS=1975 * |
Also Published As
Publication number | Publication date |
---|---|
JPS5694674A (en) | 1981-07-31 |
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