JPS62250629A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS62250629A
JPS62250629A JP61093245A JP9324586A JPS62250629A JP S62250629 A JPS62250629 A JP S62250629A JP 61093245 A JP61093245 A JP 61093245A JP 9324586 A JP9324586 A JP 9324586A JP S62250629 A JPS62250629 A JP S62250629A
Authority
JP
Japan
Prior art keywords
film
single crystal
scanning
manufacturing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61093245A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0523492B2 (enExample
Inventor
Kazuyuki Sugahara
和之 須賀原
Tadashi Nishimura
正 西村
Shigeru Kusunoki
茂 楠
Yasuaki Inoue
靖朗 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61093245A priority Critical patent/JPS62250629A/ja
Publication of JPS62250629A publication Critical patent/JPS62250629A/ja
Publication of JPH0523492B2 publication Critical patent/JPH0523492B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
JP61093245A 1986-04-24 1986-04-24 半導体装置の製造方法 Granted JPS62250629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61093245A JPS62250629A (ja) 1986-04-24 1986-04-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61093245A JPS62250629A (ja) 1986-04-24 1986-04-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62250629A true JPS62250629A (ja) 1987-10-31
JPH0523492B2 JPH0523492B2 (enExample) 1993-04-02

Family

ID=14077122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61093245A Granted JPS62250629A (ja) 1986-04-24 1986-04-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62250629A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953597A (en) * 1995-02-21 1999-09-14 Semicondutor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953597A (en) * 1995-02-21 1999-09-14 Semicondutor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6265745B1 (en) * 1995-02-21 2001-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6709905B2 (en) * 1995-02-21 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6921686B2 (en) * 1995-02-21 2005-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7045403B2 (en) * 1995-02-21 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7615423B2 (en) 1995-02-21 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device

Also Published As

Publication number Publication date
JPH0523492B2 (enExample) 1993-04-02

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Legal Events

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