JPS62250629A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS62250629A JPS62250629A JP9324586A JP9324586A JPS62250629A JP S62250629 A JPS62250629 A JP S62250629A JP 9324586 A JP9324586 A JP 9324586A JP 9324586 A JP9324586 A JP 9324586A JP S62250629 A JPS62250629 A JP S62250629A
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- scanning
- manufacturing
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000013078 crystal Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 17
- 239000012212 insulator Substances 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 43
- 230000005764 inhibitory process Effects 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9324586A JPS62250629A (ja) | 1986-04-24 | 1986-04-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9324586A JPS62250629A (ja) | 1986-04-24 | 1986-04-24 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62250629A true JPS62250629A (ja) | 1987-10-31 |
| JPH0523492B2 JPH0523492B2 (enrdf_load_stackoverflow) | 1993-04-02 |
Family
ID=14077122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9324586A Granted JPS62250629A (ja) | 1986-04-24 | 1986-04-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62250629A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5953597A (en) * | 1995-02-21 | 1999-09-14 | Semicondutor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
-
1986
- 1986-04-24 JP JP9324586A patent/JPS62250629A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5953597A (en) * | 1995-02-21 | 1999-09-14 | Semicondutor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US6204099B1 (en) | 1995-02-21 | 2001-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US6265745B1 (en) * | 1995-02-21 | 2001-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US6709905B2 (en) * | 1995-02-21 | 2004-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US6921686B2 (en) * | 1995-02-21 | 2005-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US7045403B2 (en) * | 1995-02-21 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US7615423B2 (en) | 1995-02-21 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0523492B2 (enrdf_load_stackoverflow) | 1993-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |