JPS62247523A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS62247523A JPS62247523A JP9028386A JP9028386A JPS62247523A JP S62247523 A JPS62247523 A JP S62247523A JP 9028386 A JP9028386 A JP 9028386A JP 9028386 A JP9028386 A JP 9028386A JP S62247523 A JPS62247523 A JP S62247523A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist film
- pattern
- sog
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000003513 alkali Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 3
- 229910052731 fluorine Inorganic materials 0.000 abstract description 3
- 239000011737 fluorine Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 3
- 238000001020 plasma etching Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9028386A JPS62247523A (ja) | 1986-04-18 | 1986-04-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9028386A JPS62247523A (ja) | 1986-04-18 | 1986-04-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62247523A true JPS62247523A (ja) | 1987-10-28 |
| JPH058856B2 JPH058856B2 (zh) | 1993-02-03 |
Family
ID=13994187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9028386A Granted JPS62247523A (ja) | 1986-04-18 | 1986-04-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62247523A (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005602A (ja) * | 2003-06-13 | 2005-01-06 | Semiconductor Energy Lab Co Ltd | 表面処理方法及び半導体装置の作製方法 |
| JP2012059924A (ja) * | 2010-09-09 | 2012-03-22 | Lapis Semiconductor Co Ltd | 感光性レジストパターンの形成方法、及び半導体装置の製造方法 |
| JP2017194588A (ja) * | 2016-04-21 | 2017-10-26 | Hoya株式会社 | 表面処理方法、マスクブランクの製造方法、および転写用マスクの製造方法 |
-
1986
- 1986-04-18 JP JP9028386A patent/JPS62247523A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005602A (ja) * | 2003-06-13 | 2005-01-06 | Semiconductor Energy Lab Co Ltd | 表面処理方法及び半導体装置の作製方法 |
| US7449408B2 (en) * | 2003-06-13 | 2008-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4524774B2 (ja) * | 2003-06-13 | 2010-08-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2012059924A (ja) * | 2010-09-09 | 2012-03-22 | Lapis Semiconductor Co Ltd | 感光性レジストパターンの形成方法、及び半導体装置の製造方法 |
| JP2017194588A (ja) * | 2016-04-21 | 2017-10-26 | Hoya株式会社 | 表面処理方法、マスクブランクの製造方法、および転写用マスクの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH058856B2 (zh) | 1993-02-03 |
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