JPS62244122A - 化合物半導体薄膜の製造装置 - Google Patents
化合物半導体薄膜の製造装置Info
- Publication number
- JPS62244122A JPS62244122A JP8718586A JP8718586A JPS62244122A JP S62244122 A JPS62244122 A JP S62244122A JP 8718586 A JP8718586 A JP 8718586A JP 8718586 A JP8718586 A JP 8718586A JP S62244122 A JPS62244122 A JP S62244122A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- cluster
- crucible
- crucibles
- semiconductor thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 150000002500 ions Chemical class 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 18
- 230000007935 neutral effect Effects 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 230000001133 acceleration Effects 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 229910052733 gallium Inorganic materials 0.000 abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8718586A JPS62244122A (ja) | 1986-04-17 | 1986-04-17 | 化合物半導体薄膜の製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8718586A JPS62244122A (ja) | 1986-04-17 | 1986-04-17 | 化合物半導体薄膜の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62244122A true JPS62244122A (ja) | 1987-10-24 |
| JPH0469809B2 JPH0469809B2 (enrdf_load_stackoverflow) | 1992-11-09 |
Family
ID=13907927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8718586A Granted JPS62244122A (ja) | 1986-04-17 | 1986-04-17 | 化合物半導体薄膜の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62244122A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0338367U (enrdf_load_stackoverflow) * | 1989-08-28 | 1991-04-12 | ||
| US5185287A (en) * | 1990-02-22 | 1993-02-09 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a quantum well structure |
| JP2012230952A (ja) * | 2011-04-25 | 2012-11-22 | Nippon Telegr & Teleph Corp <Ntt> | 注入方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4898775A (enrdf_load_stackoverflow) * | 1972-03-28 | 1973-12-14 | ||
| JPS5211786A (en) * | 1975-07-18 | 1977-01-28 | Futaba Corp | Method of manufacturing p-m junction type solar battery |
| JPS5462776A (en) * | 1977-10-27 | 1979-05-21 | Nec Corp | Production of compound semiconductor thin films |
| JPS5625772A (en) * | 1979-08-09 | 1981-03-12 | Mieko Kiyozawa | Toy for training wearing of cloth for infant |
-
1986
- 1986-04-17 JP JP8718586A patent/JPS62244122A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4898775A (enrdf_load_stackoverflow) * | 1972-03-28 | 1973-12-14 | ||
| JPS5211786A (en) * | 1975-07-18 | 1977-01-28 | Futaba Corp | Method of manufacturing p-m junction type solar battery |
| JPS5462776A (en) * | 1977-10-27 | 1979-05-21 | Nec Corp | Production of compound semiconductor thin films |
| JPS5625772A (en) * | 1979-08-09 | 1981-03-12 | Mieko Kiyozawa | Toy for training wearing of cloth for infant |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0338367U (enrdf_load_stackoverflow) * | 1989-08-28 | 1991-04-12 | ||
| US5185287A (en) * | 1990-02-22 | 1993-02-09 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a quantum well structure |
| JP2012230952A (ja) * | 2011-04-25 | 2012-11-22 | Nippon Telegr & Teleph Corp <Ntt> | 注入方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0469809B2 (enrdf_load_stackoverflow) | 1992-11-09 |
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