JPS4898775A - - Google Patents
Info
- Publication number
- JPS4898775A JPS4898775A JP3135772A JP3135772A JPS4898775A JP S4898775 A JPS4898775 A JP S4898775A JP 3135772 A JP3135772 A JP 3135772A JP 3135772 A JP3135772 A JP 3135772A JP S4898775 A JPS4898775 A JP S4898775A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3135772A JPS4898775A (enrdf_load_stackoverflow) | 1972-03-28 | 1972-03-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3135772A JPS4898775A (enrdf_load_stackoverflow) | 1972-03-28 | 1972-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4898775A true JPS4898775A (enrdf_load_stackoverflow) | 1973-12-14 |
Family
ID=12328967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3135772A Pending JPS4898775A (enrdf_load_stackoverflow) | 1972-03-28 | 1972-03-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4898775A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57161060A (en) * | 1981-03-30 | 1982-10-04 | Inoue Japax Res Inc | Ion working device |
| JPS58188128A (ja) * | 1982-04-27 | 1983-11-02 | Fujitsu Ltd | 分子線結晶成長方法 |
| JPS5994415A (ja) * | 1982-11-19 | 1984-05-31 | Waseda Daigaku | 半導体装置の製法 |
| JPS6057918A (ja) * | 1983-09-09 | 1985-04-03 | Matsushita Electronics Corp | 半導体結晶薄膜成長方法 |
| JPS6072218A (ja) * | 1983-09-28 | 1985-04-24 | Fujitsu Ltd | 薄膜形成方法 |
| JPS60141699A (ja) * | 1983-12-27 | 1985-07-26 | Ulvac Corp | ド−ピング用イオン源装置 |
| JPS62118518A (ja) * | 1985-11-19 | 1987-05-29 | Ulvac Corp | 化合物半導体の形成方法 |
| JPS62244122A (ja) * | 1986-04-17 | 1987-10-24 | Mitsubishi Electric Corp | 化合物半導体薄膜の製造装置 |
| US6521504B1 (en) | 1995-10-20 | 2003-02-18 | Nec Compound Semiconductor Devices, Ltd. | Semiconductor device and method of fabricating the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3520741A (en) * | 1967-12-18 | 1970-07-14 | Hughes Aircraft Co | Method of simultaneous epitaxial growth and ion implantation |
-
1972
- 1972-03-28 JP JP3135772A patent/JPS4898775A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3520741A (en) * | 1967-12-18 | 1970-07-14 | Hughes Aircraft Co | Method of simultaneous epitaxial growth and ion implantation |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57161060A (en) * | 1981-03-30 | 1982-10-04 | Inoue Japax Res Inc | Ion working device |
| JPS58188128A (ja) * | 1982-04-27 | 1983-11-02 | Fujitsu Ltd | 分子線結晶成長方法 |
| JPS5994415A (ja) * | 1982-11-19 | 1984-05-31 | Waseda Daigaku | 半導体装置の製法 |
| JPS6057918A (ja) * | 1983-09-09 | 1985-04-03 | Matsushita Electronics Corp | 半導体結晶薄膜成長方法 |
| JPS6072218A (ja) * | 1983-09-28 | 1985-04-24 | Fujitsu Ltd | 薄膜形成方法 |
| JPS60141699A (ja) * | 1983-12-27 | 1985-07-26 | Ulvac Corp | ド−ピング用イオン源装置 |
| JPS62118518A (ja) * | 1985-11-19 | 1987-05-29 | Ulvac Corp | 化合物半導体の形成方法 |
| JPS62244122A (ja) * | 1986-04-17 | 1987-10-24 | Mitsubishi Electric Corp | 化合物半導体薄膜の製造装置 |
| US6521504B1 (en) | 1995-10-20 | 2003-02-18 | Nec Compound Semiconductor Devices, Ltd. | Semiconductor device and method of fabricating the same |