JPS57161060A - Ion working device - Google Patents

Ion working device

Info

Publication number
JPS57161060A
JPS57161060A JP4765381A JP4765381A JPS57161060A JP S57161060 A JPS57161060 A JP S57161060A JP 4765381 A JP4765381 A JP 4765381A JP 4765381 A JP4765381 A JP 4765381A JP S57161060 A JPS57161060 A JP S57161060A
Authority
JP
Japan
Prior art keywords
ion
sources
voltages
heated
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4765381A
Other languages
Japanese (ja)
Inventor
Kiyoshi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INOUE JAPAX KENKYUSHO KK
Inoue Japax Research Inc
Original Assignee
INOUE JAPAX KENKYUSHO KK
Inoue Japax Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INOUE JAPAX KENKYUSHO KK, Inoue Japax Research Inc filed Critical INOUE JAPAX KENKYUSHO KK
Priority to JP4765381A priority Critical patent/JPS57161060A/en
Priority to DE8282301592T priority patent/DE3276540D1/en
Priority to DE1982301592 priority patent/DE61906T1/en
Priority to EP82301592A priority patent/EP0061906B1/en
Publication of JPS57161060A publication Critical patent/JPS57161060A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation

Abstract

PURPOSE:To perform arbitrary lamination and ion working by irradiating the plural ion generating sources and neutral particle generating sorces provided in one vacuum chamber simultaneously or in combination by leaving time lags. CONSTITUTION:The inside of a vacuum chamber 6 is maintained at a suitable degree of vacuum by the evacuation through an air releasing port 61, and respective ion generating sources 1-5 are heated by heaters. The thermoelectrons heated by the heater are discharged by the discharge voltages applied to respective discharge electrodes 11-51 and ionize the gases introduced through respective supply ports. It is possible to generate ions efficiently by applying pulse voltages as the discharge voltages to be applied to a terminal 8. The ions are drawn out by the voltages applied to electrodes for forming electric fields for drawing-out from a terminal 10 and colldie against the work 7. The ion irradiation from the sources 1-5 are changed over successively to ion formation and ion drawing-out by rotary switches 111, 112. It is possible to use >=1 among the about-mentioned sources 1-5 as neutral particle generating sources.
JP4765381A 1981-03-26 1981-03-30 Ion working device Pending JPS57161060A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4765381A JPS57161060A (en) 1981-03-30 1981-03-30 Ion working device
DE8282301592T DE3276540D1 (en) 1981-03-26 1982-03-25 A method of, and an apparatus for, processing a workpiece with energetic particles and a product processed thereby
DE1982301592 DE61906T1 (en) 1981-03-26 1982-03-25 METHOD AND DEVICE FOR PROCESSING A WORKPIECE WITH ENERGY-RICH PARTICLES, AND A PRODUCT PROCESSED IN THIS WAY.
EP82301592A EP0061906B1 (en) 1981-03-26 1982-03-25 A method of, and an apparatus for, processing a workpiece with energetic particles and a product processed thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4765381A JPS57161060A (en) 1981-03-30 1981-03-30 Ion working device

Publications (1)

Publication Number Publication Date
JPS57161060A true JPS57161060A (en) 1982-10-04

Family

ID=12781205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4765381A Pending JPS57161060A (en) 1981-03-26 1981-03-30 Ion working device

Country Status (1)

Country Link
JP (1) JPS57161060A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216964A (en) * 1987-03-04 1988-09-09 Mitsubishi Electric Corp Device for forming thin film
JPS6431965A (en) * 1987-07-28 1989-02-02 Hitachi Ltd Ion beam mixing device
JP2016539469A (en) * 2013-11-22 2016-12-15 ティーイーエル エピオン インコーポレイテッド Molecular beam assisted GCIB processing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4898775A (en) * 1972-03-28 1973-12-14
JPS50108184A (en) * 1974-02-04 1975-08-26

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4898775A (en) * 1972-03-28 1973-12-14
JPS50108184A (en) * 1974-02-04 1975-08-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216964A (en) * 1987-03-04 1988-09-09 Mitsubishi Electric Corp Device for forming thin film
JPS6431965A (en) * 1987-07-28 1989-02-02 Hitachi Ltd Ion beam mixing device
JP2016539469A (en) * 2013-11-22 2016-12-15 ティーイーエル エピオン インコーポレイテッド Molecular beam assisted GCIB processing

Similar Documents

Publication Publication Date Title
US3057792A (en) Method for improving the imprintability of synthetic material
GB2272995B (en) Method for making or treating a semiconductor
WO1993024220A1 (en) Electrical apparatus and method for generating antibiotic
CA2052080A1 (en) Plasma source arrangement for ion implantation
JPS57161060A (en) Ion working device
JPS57208029A (en) Electric power unit for ion source
JP3365643B2 (en) Ion implanter
JPS5747866A (en) Surface treatment by electric glow discharge
MY128638A (en) High-speed symmetrical plasma treatment system
RU2026413C1 (en) Method of heating of electric conducting products in working chamber
JPS57161057A (en) Chemical vapor phase growth device using plasma
JPS54102872A (en) Ion etching method
DE59501907D1 (en) Process for the plasma treatment of workpieces
DE3142900C2 (en)
RU98100837A (en) DEVICE FOR COATING IN VACUUM
JPS5524941A (en) Dry etching apparatus
JPH0397871A (en) Plasma cvd device
RU2074903C1 (en) Apparatus for ionic-plasma treatment of pieces
JPS5521538A (en) Plasma surface treating apparatus
RU2074905C1 (en) Method of ionic-plasma treatment of lengthened pieces
JPS57174465A (en) High frequency ion etching device
JPS5468169A (en) Plasma processor of capacitor type
JPS539082A (en) Gas exhausting device for fluorescent lamp
JPS575869A (en) Vapor depositing apparatus
JPS5687671A (en) Dry etching apparatus