JPS62241795A - 潜水機の固着装置 - Google Patents
潜水機の固着装置Info
- Publication number
- JPS62241795A JPS62241795A JP61082178A JP8217886A JPS62241795A JP S62241795 A JPS62241795 A JP S62241795A JP 61082178 A JP61082178 A JP 61082178A JP 8217886 A JP8217886 A JP 8217886A JP S62241795 A JPS62241795 A JP S62241795A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- fixed
- decompression chamber
- pressure water
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000009189 diving Effects 0.000 title abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004873 anchoring Methods 0.000 claims description 2
- 230000006837 decompression Effects 0.000 abstract description 9
- 238000001179 sorption measurement Methods 0.000 abstract description 2
- 239000002516 radical scavenger Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Manipulator (AREA)
- Hooks, Suction Cups, And Attachment By Adhesive Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61082178A JPS62241795A (ja) | 1986-04-11 | 1986-04-11 | 潜水機の固着装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61082178A JPS62241795A (ja) | 1986-04-11 | 1986-04-11 | 潜水機の固着装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62241795A true JPS62241795A (ja) | 1987-10-22 |
| JPH0336717B2 JPH0336717B2 (cg-RX-API-DMAC7.html) | 1991-06-03 |
Family
ID=13767179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61082178A Granted JPS62241795A (ja) | 1986-04-11 | 1986-04-11 | 潜水機の固着装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62241795A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011246076A (ja) * | 2010-05-29 | 2011-12-08 | National Institute For Materials Science | 接着構造体及びそれを用いた水中移動装置 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100400808B1 (ko) | 1997-06-24 | 2003-10-08 | 매사츄세츠 인스티튜트 오브 테크놀러지 | 그레이드된 GeSi층 및 평탄화를 사용한 Si상의 Ge의 쓰레딩 전위 밀도 제어 |
| US6503773B2 (en) | 2000-01-20 | 2003-01-07 | Amberwave Systems Corporation | Low threading dislocation density relaxed mismatched epilayers without high temperature growth |
| WO2002015244A2 (en) | 2000-08-16 | 2002-02-21 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded expitaxial growth |
| WO2002082514A1 (en) | 2001-04-04 | 2002-10-17 | Massachusetts Institute Of Technology | A method for semiconductor device fabrication |
| US7074623B2 (en) | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| WO2003105206A1 (en) | 2002-06-10 | 2003-12-18 | Amberwave Systems Corporation | Growing source and drain elements by selecive epitaxy |
| JP4659732B2 (ja) | 2003-01-27 | 2011-03-30 | 台湾積體電路製造股▲ふん▼有限公司 | 半導体層を形成する方法 |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
-
1986
- 1986-04-11 JP JP61082178A patent/JPS62241795A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011246076A (ja) * | 2010-05-29 | 2011-12-08 | National Institute For Materials Science | 接着構造体及びそれを用いた水中移動装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336717B2 (cg-RX-API-DMAC7.html) | 1991-06-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |